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Infineon Technologies |
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,864 |
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Logic Level Gate | 30V | 2.3A, 2A | 80 mOhm @ 2A, 10V | 2V @ 11µA | 500nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET 2N-CH 50V 3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock85,488 |
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Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET N/P-CH 20V/8V SOT-363
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V, 8V
- Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
- Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
- Power - Max: 270mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock5,680 |
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Logic Level Gate | 20V, 8V | 630mA, 775mA | 375 mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V 3.2A/2.8A SC75
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.8A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC75-6 FLMP
- Supplier Device Package: SC75-6 FLMP
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Package: SC75-6 FLMP |
Stock47,364 |
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Logic Level Gate | 20V | 3.2A, 2.8A | 90 mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 200pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | SC75-6 FLMP | SC75-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 4A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock59,904 |
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Logic Level Gate | 20V | 4A | 55 mOhm @ 4A, 4.5V | 1V @ 250µA | 28nC @ 5V | 1130pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 200V 317A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 317A
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
- Power - Max: 1136W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,848 |
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Standard | 200V | 317A | 6 mOhm @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | 1136W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock2,384 |
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Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Vishay Siliconix |
MOSFET 2N-CH 60V 15A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
- Power - Max: 34W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock3,632 |
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Standard | 60V | 15A | 56.2 mOhm @ 3.7A, 10V | 2.5V @ 250µA | 12nC @ 10V | 446pF @ 30V | 34W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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ON Semiconductor |
MOSFET 2N-CH 20V 23A EFCP
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.5W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-CSP (1.77x3.54)
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Package: 6-SMD, No Lead |
Stock3,040 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 27nC @ 4.5V | - | 2.5W | - | Surface Mount | 6-SMD, No Lead | 6-CSP (1.77x3.54) |
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ON Semiconductor |
MOSFET 2N-CH EFCP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.6W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA
- Supplier Device Package: 6-EFCP (1.9x1.46)
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Package: 6-XFBGA |
Stock3,008 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 19.8nC @ 4.5V | - | 1.6W | 150°C (TJ) | Surface Mount | 6-XFBGA | 6-EFCP (1.9x1.46) |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 40A LFPAK56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
- Power - Max: 64W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock7,888 |
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Standard | 60V | 40A | 10 mOhm @ 10A, 10V | 4V @ 1mA | 30.1nC @ 10V | 2163pF @ 25V | 64W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Diodes Incorporated |
MOSFET 2P-CH 60V 3.7A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock10,608 |
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Logic Level Gate | 60V | 3.7A | 55 mOhm @ 3.5A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | 1580pF @ 30V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 45V 4.5A SOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock113,208 |
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Logic Level Gate | 45V | 4.5A | 46 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9.6nC @ 5V | 550pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Vishay Siliconix |
MOSFET 2N-CH 30V 16A 6-POWERPAIR
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A, 35A
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair?
- Supplier Device Package: 6-PowerPair?
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Package: 6-PowerPair? |
Stock90,252 |
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Logic Level Gate | 30V | 16A, 35A | 9.3 mOhm @ 15A, 10V | 2.2V @ 250µA | 24nC @ 10V | 830pF @ 15V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair? | 6-PowerPair? |
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Diodes Incorporated |
MOSFET 2N-CH 20V 8A SOP8L
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,968 |
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Logic Level Gate | 20V | 8A | 24 mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 8.8nC @ 4.5V | 867pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Cree/Wolfspeed |
MOSFET 2N-CH 1200V 193A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 193A
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
- Power - Max: 925W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock6,016 |
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Standard | 1200V (1.2kV) | 193A | 16 mOhm @ 120A, 20V | 2.6V @ 6mA (Typ) | 378nC @ 20V | 6300pF @ 1000V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 60V SSOT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 510mA, 340mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock242,184 |
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Logic Level Gate | 60V | 510mA, 340mA | 2 Ohm @ 510mA, 10V | 2.5V @ 250µA | 1.5nC @ 10V | 20pF @ 25V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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onsemi |
MOSFET 2N-CH 40V 20A 8PQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
- Power - Max: 75W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
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Package: - |
Request a Quote |
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- | 40V | 20A (Tc) | 5.8mOhm @ 20A, 10V | 4V @ 250µA | 43nC @ 10V | 2100pF @ 20V | 75W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) |
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Vishay Siliconix |
MOSFET 2P-CH 30V 3.7A 8-SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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Logic Level Gate | 30V | 3.7A | 53mOhm @ 4.9A, 10V | 1V @ 250µA (Min) | 25nC @ 10V | - | 1.1W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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onsemi |
MOSFET 2N-CH 40V 11A/36A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
- Power - Max: 3W (Ta), 24W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Stock17,139 |
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- | 40V | 11A (Ta), 36A (Tc) | 11.5mOhm @ 5A, 10V | 2.2V @ 20µA | 9nC @ 10V | 590pF @ 25V | 3W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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onsemi |
MOSFET N-CH 40V LFPAK56
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild Semiconductor |
MOSFET N-CH 200V
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock34,851 |
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Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta) | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,500 |
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- | 60V | 5A (Ta) | 48mOhm @ 5A, 10V | 2.5V @ 1mA | 12nC @ 5V | 620pF @ 10V | 2W | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Renesas Electronics Corporation |
MOSFET 2N-CH 30V 7.5A/8A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A
- Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Logic Level Gate, 4.5V Drive | 30V | 7.5A, 8A | 24mOhm @ 3.75A, 10V | - | 4.6nC @ 4.5V | 630pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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onsemi |
SIC 2N-CH 1200V 114A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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Good-Ark Semiconductor |
MOSFET N/P-CH 40V 6.7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
- Power - Max: 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock17,802 |
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- | 40V | 6.7A (Tc), 7.2A (Tc) | 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V | 2.5V @ 250µA | 5.6nC @ 4.5V, 16nC @ 4.5V | 800pF @ 15V, 1600pF @ 15V | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2N-CH 1200V 25A
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 5.15V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock72 |
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- | 1200V (1.2kV) | 25A | 32.3mOhm @ 25A, 18V | 5.15V @ 10mA | 74nC @ 18V | 2200pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |