Page 131 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

EFC8822R-X-TF
ON Semiconductor

MOSFET N-CH DUAL 6CSP

Package: -

Stock4,608
SI6966EDQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock149,952
FDW2521C
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock78,804
ZXMN3A06N8TA
Diodes Incorporated

MOSFET 2N-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,080
ZXMN3A06DN8TC
Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock363,912
NTMC1300R2
ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,792
BSL214NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,568
DMN3055LFDB-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

Package: 6-UDFN Exposed Pad

Stock4,960
TSM3911DCX6 RFG
TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

Package: SOT-23-6

Stock2,608
ALD310702PCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

Package: 16-DIP (0.300", 7.62mm)

Stock7,760
NX7002AKS,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.17A SC-88

Package: 6-TSSOP, SC-88, SOT-363

Stock27,186
CMLDM5757 TR
Central Semiconductor Corp

MOSFET 2P-CH 20V 430MA SOT563

Package: SOT-563, SOT-666

Stock27,852
TSM250N02DCQ
Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 5.8A 6TDFN

Package: -

Request a Quote
SQJQ906E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 95A PPAK8X8

Package: -

Stock5,166
AOC2804B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4DFN

Package: -

Request a Quote
SCH2817-TL-H
onsemi

NCH+SBD 1.8V DRIVE SERIES

Package: -

Request a Quote
PSMN9R3-60HSX
Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56D

Package: -

Stock4,710
CTLDM303N-M832DS-BK
Central Semiconductor Corp

MOSFET 2N-CH 30V 3.6A TLM832DS

Package: -

Request a Quote
NVMFD027N10MCLT1G
onsemi

PTNG 100V LL SO8FL DUAL

Package: -

Request a Quote
AOC3878
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 35A 10DFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EFC8822R-X-TF	ON Semiconductor	MOSFET N-CH DUAL 6CSP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock4,608	-	-	-	-	-	-	-	-	-	-	-	-
SI6966EDQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock149,952	Logic Level Gate	20V	-	30 mOhm @ 5.2A, 4.5V	600mV @ 250µA (Min)	25nC @ 4.5V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDW2521C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A, 3.8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock78,804	Logic Level Gate	20V	5.5A, 3.8A	21 mOhm @ 5.5A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1082pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ZXMN3A06N8TA	Diodes Incorporated	MOSFET 2N-CH 30V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,080	Standard	30V	-	-	-	-	-	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ZXMN3A06DN8TC	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock363,912	Logic Level Gate	30V	4.9A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTMC1300R2	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,792	Logic Level Gate	30V	2.2A, 1.8A	90 mOhm @ 3A, 10V	2.2V @ 250µA	5nC @ 4.5V	300pF @ 20V	2W	-65°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BSL214NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 1.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,568	Logic Level Gate, 2.5V Drive	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8nC @ 5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
DMN3055LFDB-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock4,960	Standard	-	5A (Ta)	40 mOhm @ 3A, 4.5V	1.5V @ 250µA	5.3nC @ 4.5V	458pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
TSM3911DCX6 RFG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -20V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: SOT-23-6	Stock2,608	Standard	20V	2.2A (Ta)	140 mOhm @ 2.2A, 4.5V	950mV @ 250µA	15.23nC @ 4.5V	882.51pF @ 6V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
ALD310702PCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 180mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock7,760	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
NX7002AKS,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.17A SC-88 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock27,186	Logic Level Gate	60V	170mA	4.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.43nC @ 4.5V	17pF @ 10V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
CMLDM5757 TR	Central Semiconductor Corp	MOSFET 2P-CH 20V 430MA SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock27,852	Logic Level Gate	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	1.2nC @ 4.5V	175pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
TSM250N02DCQ	Taiwan Semiconductor Corporation	MOSFET 2N-CH 20V 5.8A 6TDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 0.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Power - Max: 620mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	Package: -	Request a Quote	-	20V	5.8A (Tc)	25mOhm @ 4A, 4.5V	0.8V @ 250µA	11nC @ 4.5V	775pF @ 10V	620mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
SQJQ906E-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 95A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	Package: -	Stock5,166	-	40V	95A (Tc)	3.3mOhm @ 5A, 10V	3.5V @ 250µA	42nC @ 10V	3600pF @ 20V	50W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
AOC2804B	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 4DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XDFN Supplier Device Package: 4-DFN (1.5x1.5)	Package: -	Request a Quote	-	-	-	-	1.3V @ 250µA	9.5nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	4-XDFN	4-DFN (1.5x1.5)
SCH2817-TL-H	onsemi	NCH+SBD 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PSMN9R3-60HSX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V Power - Max: 68W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock4,710	-	60V	40A (Ta)	9.3mOhm @ 10A, 10V	4V @ 1mA	34.2nC @ 10V	2348pF @ 25V	68W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
CTLDM303N-M832DS-BK	Central Semiconductor Corp	MOSFET 2N-CH 30V 3.6A TLM832DS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 1.65W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	Package: -	Request a Quote	-	30V	3.6A (Ta)	40mOhm @ 1.8A, 4.5V	1.25V @ 250µA	13nC @ 4.5V	590pF @ 10V	1.65W	-55°C ~ 150°C (TJ)	Surface Mount	8-TDFN Exposed Pad	TLM832DS
NVMFD027N10MCLT1G	onsemi	PTNG 100V LL SO8FL DUAL FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 38µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Power - Max: 3.1W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	100V	7.4A (Ta), 28A (Tc)	26mOhm @ 7A, 10V	3V @ 38µA	11nC @ 10V	720pF @ 50V	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
AOC3878	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 35A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (3.55x1.77)	Package: -	Request a Quote	-	12V	35A (Ta)	2Ohm @ 5A, 4.5V	1.1V @ 250µA	60nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (3.55x1.77)
DMN33D8LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock29,589	Logic Level Gate	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SSM6N55NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	Package: -	Stock1,455	Logic Level Gate	30V	4A	46mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
DMC62D2SV-13	Diodes Incorporated	MOSFET N/P-CH 60V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	480mA (Ta), 320mA (Ta)	1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.04nC @ 10V, 1.1nC @ 10V	41pF @ 30V, 40pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NXV08H250DPT2	onsemi	APM17-MFA, MV7 80V, AL2O3, 2 PHA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (2.020", 51.30mm) Supplier Device Package: APM17-MFA	Package: -	Request a Quote	-	80V	-	0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V	4.6V @ 1mA	320nC @ 10V	24350pF @ 40V	-	-40°C ~ 125°C	Through Hole	17-PowerDIP Module (2.020", 51.30mm)	APM17-MFA
DMT6011LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 10.3A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V Power - Max: 2.5W (Ta), 37.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	60V	10.3A (Ta), 40A (Tc)	14mOhm @ 10A, 10V	2.5V @ 250µA	22.2nC @ 10V	1072pF @ 30V	2.5W (Ta), 37.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
PJQ5850-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 5A/14A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Power - Max: 2W (Ta), 14.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	Package: -	Request a Quote	-	40V	5A (Ta), 14A (Tc)	33mOhm @ 8A, 10V	2.5V @ 250µA	4.4nC @ 4.5V	425pF @ 25V	2W (Ta), 14.4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
DMC2025UFDB-13	Diodes Incorporated	MOSFET N/P-CH 20V 6A/3.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: -	Request a Quote	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
PJX8804_R1_00001	Panjit International Inc.	MOSFET 2N-CH 30V 0.6A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	30V	600mA (Ta)	220mOhm @ 600mA, 4,5V	1.3V @ 250µA	1.5nC @ 4.5V	93pF @ 15V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563