Page 133 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

SIF912EDZ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 7.4A 6-POWERPAK

Package: PowerPAK? 2x5

Stock1,429,632
SI4908DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock363,036
ZXMN2A04DN8TC
Diodes Incorporated

MOSFET 2N-CH 20V 5.9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock384,684
AUIRFN8459TR
Infineon Technologies

MOSFET 2N-CH 40V 50A 8PQFN

Package: 8-PowerTDFN

Stock6,864
APTM20HM20STG
Microsemi Corporation

MOSFET 4N-CH 200V 89A SP4

Package: SP4

Stock7,648
DMNH4015SSD-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,064
NVLJD4007NZTBG
ON Semiconductor

MOSFET 2N-CH 30V 0.245A WDFN6

Package: 6-WDFN Exposed Pad

Stock4,640
EFC4619R-TR
ON Semiconductor

MOSFET 2N-CH EFCP

Package: 4-XFBGA

Stock161,100
SI5922DU-T1-GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 30V CHIPFET

Package: PowerPAK? ChipFET? Dual

Stock2,576
SI5999EDU-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 6A POWERPAK

Package: PowerPAK? ChipFET? Dual

Stock6,480
FDMS7602S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/17A POWER56

Package: 8-PowerWDFN

Stock674,016
SI4936CDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock645,084
SQJ940EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 15A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock6,624
UP0187B00L
Panasonic Electronic Components

MOSFET 2N-CH 30V 0.1A SSMINI-5

Package: SOT-665

Stock480,000
SIA929DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC70-6

Package: PowerPAK? SC-70-6 Dual

Stock108,012
DMN1033UCB4-7
Diodes Incorporated

MOSFET 2N-CH 12V U-WLB1818-4

Package: 4-UFBGA, WLBGA

Stock28,668
FDS4935A
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock214,440
SI1922EDH-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock722,952
SH8K10SGZETB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A/8.5A 8SOP

Package: -

Stock7,425
DMN52D0UVT-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIF912EDZ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 7.4A 6-POWERPAK FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 2x5 Supplier Device Package: PowerPAK? (2x5)	Package: PowerPAK? 2x5	Stock1,429,632	Logic Level Gate	30V	7.4A	19 mOhm @ 7.4A, 4.5V	1.5V @ 250µA	15nC @ 4.5V	-	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 2x5	PowerPAK? (2x5)
SI4908DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V Power - Max: 2.75W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock363,036	Standard	40V	5A	60 mOhm @ 4.1A, 10V	2.2V @ 250µA	12nC @ 10V	355pF @ 20V	2.75W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN2A04DN8TC	Diodes Incorporated	MOSFET 2N-CH 20V 5.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock384,684	Logic Level Gate	20V	5.9A	25 mOhm @ 5.9A, 4.5V	700mV @ 250µA (Min)	22.1nC @ 5V	1880pF @ 10V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AUIRFN8459TR	Infineon Technologies	MOSFET 2N-CH 40V 50A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	Package: 8-PowerTDFN	Stock6,864	Standard	40V	50A	5.9 mOhm @ 40A, 10V	3.9V @ 50µA	60nC @ 10V	2250pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
APTM20HM20STG	Microsemi Corporation	MOSFET 4N-CH 200V 89A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock7,648	Standard	200V	89A	24 mOhm @ 44.5A, 10V	5V @ 2.5mA	112nC @ 10V	6850pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
DMNH4015SSD-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,064	Standard	-	11A (Ta)	15 mOhm @ 12A, 10V	3V @ 250µA	15nC @ 4.5V	1938pF @ 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVLJD4007NZTBG	ON Semiconductor	MOSFET 2N-CH 30V 0.245A WDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 245mA Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 755mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	Package: 6-WDFN Exposed Pad	Stock4,640	Logic Level Gate	30V	245mA	7 Ohm @ 125mA, 4.5V	1.5V @ 100µA	0.75nC @ 4.5V	20pF @ 5V	755mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
EFC4619R-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: 4-EFCP (1.61x1.61)	Package: 4-XFBGA	Stock161,100	Logic Level Gate, 2.5V Drive	-	-	-	-	21.7nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	4-XFBGA	4-EFCP (1.61x1.61)
SI5922DU-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 30V CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 15V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock2,576	Standard	30V	6A (Tc)	19.2 mOhm @ 5A, 10V	2.2V @ 250µA	7.1nC @ 4.5V	765pF @ 15V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SI5999EDU-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 6A POWERPAK FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock6,480	Logic Level Gate	20V	6A	59 mOhm @ 3.5A, 4.5V	1.5V @ 250µA	20nC @ 10V	496pF @ 10V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
FDMS7602S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/17A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	Package: 8-PowerWDFN	Stock674,016	Logic Level Gate	30V	12A, 17A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
SI4936CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock645,084	Logic Level Gate	30V	5.8A	40 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 10V	325pF @ 15V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ940EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 15A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V Power - Max: 48W, 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	Package: PowerPAK? SO-8 Dual	Stock6,624	Logic Level Gate	40V	15A (Ta), 18A (Tc)	16 mOhm @ 15A, 10V	2.5V @ 250µA	20nC @ 20V	896pF @ 20V	48W, 43W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
UP0187B00L	Panasonic Electronic Components	MOSFET 2N-CH 30V 0.1A SSMINI-5 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 125mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F2	Package: SOT-665	Stock480,000	Logic Level Gate	30V	100mA	8 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	125mW	125°C (TJ)	Surface Mount	SOT-665	SSMini5-F2
SIA929DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock108,012	Logic Level Gate	30V	4.5A (Tc)	64 mOhm @ 3A, 10V	1.1V @ 250µA	21nC @ 10V	575pF @ 15V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMN1033UCB4-7	Diodes Incorporated	MOSFET 2N-CH 12V U-WLB1818-4 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLBGA Supplier Device Package: U-WLB1818-4	Package: 4-UFBGA, WLBGA	Stock28,668	Logic Level Gate	-	-	-	-	37nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-UFBGA, WLBGA	U-WLB1818-4
FDS4935A	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock214,440	Logic Level Gate	30V	7A	23 mOhm @ 7A, 10V	3V @ 250µA	21nC @ 5V	1233pF @ 15V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1922EDH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock722,952	Logic Level Gate	20V	1.3A	198 mOhm @ 1A, 4.5V	1V @ 250µA	2.5nC @ 8V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SH8K10SGZETB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A/8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock7,425	-	30V	7A (Ta), 8.5A (Ta)	24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V	2.5V @ 1mA	16.8nC @ 5V, 17.8nC @ 5V	660pF @ 10V, 830pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN52D0UVT-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SI1900DL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 0.63A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), 590mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 300mW, 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: -	Stock9,000	-	30V	630mA (Ta), 590mA (Ta)	480mOhm @ 590mA, 10V	3V @ 250µA	1.4nC @ 10V	-	300mW, 270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
APM4953	UMW	MOSFET 30V 5.3A 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock2,403	-	30V	5.3A (Ta)	41mOhm @ 5.3A, 10V	2.5V @ 250µA	12nC @ 10V	504pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA2590T1H-T1-AT	Renesas Electronics Corporation	MOSFET N/P-CH 30V 4.5A 8VSOF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.24W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VSOF	Package: -	Request a Quote	Logic Level Gate	30V	4.5A	50mOhm @ 2A, 10V	2.5V @ 1mA	6.6nC @ 10V	310pF @ 10V	1.24W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-VSOF
IRF7314QTRPBF	Infineon Technologies	MOSFET 2P-CH 20V 5.2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V Power - Max: 2.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	Logic Level Gate	20V	5.2A	58mOhm @ 5.2A, 4.5V	700mV @ 250µA	29nC @ 4.5V	913pF @ 15V	2.4W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ208EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	Package: -	Request a Quote	-	40V	20A (Tc), 60A (Tc)	9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V	2.3V @ 250µA, 2.4V @ 250µA	33nC @ 10V, 75nC @ 10V	1700pF @ 25V, 3900pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
NTK3142PT1H-ON	onsemi	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PSMN033-100HLX	Nexperia USA Inc.	MOSFET 2N-CH 100V 26A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock4,734	Logic Level Gate	100V	26A (Ta)	31mOhm @ 5A, 10V	2.1V @ 1mA	27.3nC @ 5V	3168pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
2N7002DWS-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.247A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 247mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock9,000	-	60V	247mA (Ta)	4Ohm @ 500mA, 10V	2.5V @ 250µA	0.4nC @ 4.5V	41pF @ 25V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363