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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 5A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock150,636 |
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Logic Level Gate | 30V | 5A | 48 mOhm @ 5A, 10V | 1.3V @ 250µA | 9nC @ 4.5V | 780pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 30V 2.5A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,264 |
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Logic Level Gate | 30V | 2.5A | 80 mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 8nC @ 5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2N-CH 20V 1.3A SC70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock220,452 |
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Logic Level Gate | 20V | 1.3A | 205 mOhm @ 1.3A, 4.5V | 1.6V @ 250µA | 3.8nC @ 10V | 105pF @ 10V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
- Power - Max: 4.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,184 |
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Logic Level Gate | 30V | 8A | 14.5 mOhm @ 6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1465pF @ 15V | 4.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2NCH 30V 6.2A UDFN2020
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock7,552 |
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Standard | 30V | 6.2A (Ta) | 30 mOhm @ 5.8A, 10V | 2V @ 250µA | 10.6nC @ 10V | 500pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Diodes Incorporated |
MOSFET N/P-CH 30V SOT963
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: SOT-963 |
Stock3,504 |
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Logic Level Gate | 30V | 220mA, 200mA | 1.5 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.38nC @ 4.5V | 22.6pF @ 15V | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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TSC America Inc. |
MOSFET, DUAL, N-CHANNEL, TRENCH,
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
- Power - Max: 20W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PDFN (3x3)
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Package: 8-PowerWDFN |
Stock2,160 |
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Standard | 30V | 20A (Tc) | 20 mOhm @ 10A, 10V | 2.5V @ 250µA | 4nC @ 4.5V | 345pF @ 25V | 20W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 10A PWR56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
- Power - Max: 2.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Power56
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Package: 8-PowerWDFN |
Stock7,376 |
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Logic Level Gate | 100V | 10A | 13 mOhm @ 10A, 10V | 4V @ 250µA | 27nC @ 10V | 1800pF @ 50V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power56 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 60V 4.5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,678,164 |
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Logic Level Gate | 60V | - | 56 mOhm @ 4.5A, 10V | 3V @ 250µA | 10.5nC @ 10V | 540pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V POWER56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Power56
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Package: 8-PowerWDFN |
Stock840,012 |
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Logic Level Gate | 30V | 10.1A, 12.4A | 20 mOhm @ 10.1A, 10V | 3V @ 250µA | 11nC @ 10V | 608pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power56 |
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Renesas Electronics America |
MOSFET 2N-CH 24V
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.75W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFLGA
- Supplier Device Package: 6-EFLIP-LGA
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Package: 6-XFLGA |
Stock3,632 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | - | - | 1.75W | 150°C (TJ) | Surface Mount | 6-XFLGA | 6-EFLIP-LGA |
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Microchip Technology |
SIC 2N-CH 1200V 173A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 745W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Panjit International Inc. |
MOSFET 2N-CH 30V 3.9A SOT23-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
Request a Quote |
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- | 30V | 3.9A (Ta) | 48mOhm @ 3.9A, 10V | 1.2V @ 250µA | 11.3nC @ 10V | 490pF @ 15V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET 2N-CH 24V 13A X3-DSN2718
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 10V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X3-DSN2718-6
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Package: - |
Request a Quote |
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- | 24V | 13A (Ta) | 9mOhm @ 5A, 4.5V | 1.3V @ 1mA | 26nC @ 4V | 2417pF @ 10V | 820mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | X3-DSN2718-6 |
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Infineon Technologies |
TRENCH >=100V
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: PG-WHSON-8
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Package: - |
Request a Quote |
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- | 150V | - | - | - | - | - | - | - | Surface Mount | 8-PowerWDFN | PG-WHSON-8 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 0.92A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock12,135 |
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- | 20V | 920mA (Ta) | 450mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.6nC @ 4.5V | 42pF @ 16V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET N/P-CH 30V 3.6A TSOT23-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-23-6
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Package: - |
Request a Quote |
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- | 30V | 3.6A (Ta), 2.8A (Ta) | 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V | 1.8V @ 250µA, 2.1V @ 250µA | 11.3nC @ 10V | 395pF @ 15V, 324pF @ 15V | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-23-6 |
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Good-Ark Semiconductor |
MOSFET 2N-CH 65V 45A 8PPAK
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
- Power - Max: 67W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PPAK (5.1x5.71)
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Package: - |
Stock8,490 |
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- | 65V | 45A (Tc) | 13mOhm @ 20A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1890pF @ 30V | 67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PPAK (5.1x5.71) |
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Diodes Incorporated |
MOSFET 2N-CH 30V 10A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
- Power - Max: 2.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
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Package: - |
Request a Quote |
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- | 30V | 10A (Ta), 20A (Tc) | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V | 2.1V @ 250µA, 1.15V @ 250µA | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 850pF @ 15V, 1480pF @ 15V | 2.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |
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Panjit International Inc. |
MOSFET N/P-CH 30V 7.6A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
- Power - Max: 2W (Ta), 18W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: DFN3030B-8
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Package: - |
Request a Quote |
|
- | 30V | 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc) | 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V | 2.5V @ 250µA | 4.8nC @ 4.5V, 7.8nC @ 4.5V | 429pF @ 25V, 846pF @ 15V | 2W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | DFN3030B-8 |
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Infineon Technologies |
MOSFET N/P-CH 60V 3.1A/2A 8DSO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: - |
Stock46,761 |
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Logic Level Gate | 60V | 3.1A (Ta), 2A (Ta) | 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V | 2V @ 20µA, 2V @ 450µA | 22.5nC @ 10V, 20nC @ 10V | 380pF @ 25V, 460pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Rohm Semiconductor |
MOSFET N/P-CH 40V 4.5A/2A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock22,623 |
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- | 40V | 4.5A (Ta), 2A (Ta) | 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V | 2.5V @ 10µA, 3V @ 1mA | 2.6nC @ 10V, 9.5nC @ 10V | 193pF @ 20V, 450pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Micro Commercial Co |
MOSFET 2N-CH 50V 0.22A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock17,265 |
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- | 50V | 220mA | 1.5Ohm @ 500mA, 10V | 1.45V @ 250µA | - | 22.8pF @ 25V | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Vishay Siliconix |
MOSFET 2N-CH 20V 0.85A SC70-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Power - Max: 1.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: - |
Stock69,702 |
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- | 20V | 850mA (Tc) | 300mOhm @ 400mA, 4.5V | 2.5V @ 250µA | 1.2nC @ 4.5V | 60pF @ 10V | 1.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Micro Commercial Co |
MOSFET 2P-CH 30V 8A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock203,232 |
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- | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Vishay Siliconix |
MOSFET 2N-CH 20V 0.66A SC70-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 270mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: - |
Stock8,892 |
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- | 20V | 660mA (Ta) | 385mOhm @ 660mA, 4.5V | 1.5V @ 250µA | 1.2nC @ 4.5V | - | 270mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Renesas Electronics Corporation |
MOSFET 2P-CH 12V 5A 8VSOF
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
- Power - Max: 2.2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-VSOF
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Package: - |
Request a Quote |
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Logic Level Gate | 12V | 5A | 40mOhm @ 2.5A, 4.5V | 1V @ 1mA | 8.7nC @ 4V | 930pF @ 10V | 2.2W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-VSOF |
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SemiQ |
SIC 1200V 40M MOSFET FULL-BRIDGE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
- Power - Max: 217W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock60 |
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- | 1200V (1.2kV) | 56A (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | 121nC @ 20V | 3200pF @ 800V | 217W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |