Page 180 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

BSO330N02KGFUMA1
Infineon Technologies

MOSFET 2N-CH 20V 5.4A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,072
IRF8513TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock180,408
IRF7350PBF
Infineon Technologies

MOSFET N/P-CH 100V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,416
QJD1210010
Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

Package: Module

Stock4,064
AON3613
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.5A 8DFN

Package: 8-SMD, Flat Lead

Stock2,160
SI4944DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 9.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,256
SI5938DU-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 6A 8PWRPAK

Package: PowerPAK? ChipFET? Dual

Stock2,592
FDW2510NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.4A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock29,880
FDR8702H
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SSOT-8

Package: 8-SMD, Gull Wing

Stock4,592
APTM10TDUM09PG
Microsemi Corporation

MOSFET 6N-CH 100V 139A SP6-P

Package: SP6

Stock2,752
DMP2160UFDB-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

Package: 6-UDFN Exposed Pad

Stock36,000
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,088
IRF7306TR
Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock453,648
FDPC8014AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 20A/40A

Package: 8-PowerWDFN

Stock5,856
EM6J1T2R
Rohm Semiconductor

MOSFET 2P-CH 20V 0.2A EMT6

Package: SOT-563, SOT-666

Stock517,212
CTLDM7120-M832DS TR
Central Semiconductor Corp

MOSFET 2N-CH 20V 1A

Package: 8-TDFN Exposed Pad

Stock28,716
DMC3025LSDQ-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/4.2A 8SO

Package: -

Stock30,333
GSF7002DW
Good-Ark Semiconductor

MOSFET 2N-CH 60V 0.34A SOT363

Package: -

Stock16,125
MSCSM70VR1M03CT6AG
Microchip Technology

SIC 2N-CH 700V 585A

Package: -

Request a Quote
ZXMC3A16DN8QTA
Diodes Incorporated

MOSFET N/P-CH 30V 6.4A/5.4A 8SO

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO330N02KGFUMA1	Infineon Technologies	MOSFET 2N-CH 20V 5.4A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,072	Logic Level Gate	20V	5.4A	30 mOhm @ 6.5A, 4.5V	1.2V @ 20µA	4.9nC @ 4.5V	730pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
IRF8513TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 8A/11A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 11A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V Power - Max: 1.5W, 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock180,408	Logic Level Gate	30V	8A, 11A	15.5 mOhm @ 8A, 10V	2.35V @ 25µA	8.6nC @ 4.5V	766pF @ 15V	1.5W, 2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7350PBF	Infineon Technologies	MOSFET N/P-CH 100V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,416	Standard	100V	2.1A, 1.5A	210 mOhm @ 2.1A, 10V	4V @ 250µA	28nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QJD1210010	Powerex Inc.	MOSFET 2N-CH 1200V 100A SIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V Power - Max: 1080W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock4,064	Standard	1200V (1.2kV)	100A	25 mOhm @ 100A, 20V	5V @ 10mA	500nC @ 20V	10200pF @ 800V	1080W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
AON3613	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 4.5A 8DFN FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 52 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	Package: 8-SMD, Flat Lead	Stock2,160	Logic Level Gate	30V	4.5A	52 mOhm @ 4.5A, 10V	1.5V @ 250µA	10nC @ 10V	245pF @ 15V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
SI4944DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 9.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.3A Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,256	Logic Level Gate	30V	9.3A	9.5 mOhm @ 12.2A, 10V	3V @ 250µA	21nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5938DU-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 6A 8PWRPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock2,592	Logic Level Gate	20V	6A	39 mOhm @ 4.4A, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
FDW2510NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6.4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock29,880	Logic Level Gate	20V	6.4A	24 mOhm @ 6.4A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	870pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDR8702H	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SSOT-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: SuperSOT?-8	Package: 8-SMD, Gull Wing	Stock4,592	Logic Level Gate	20V	3.6A, 2.6A	38 mOhm @ 3.6A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	650pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Gull Wing	SuperSOT?-8
APTM10TDUM09PG	Microsemi Corporation	MOSFET 6N-CH 100V 139A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	Package: SP6	Stock2,752	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
DMP2160UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.8A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock36,000	Logic Level Gate	20V	3.8A	70 mOhm @ 2.8A, 4.5V	900mV @ 250µA	6.5nC @ 4.5V	536pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SSM6N16FUTE85LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A US6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,088	Standard	20V	100mA	3 Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	200mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
IRF7306TR	Infineon Technologies	MOSFET 2P-CH 30V 3.6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock453,648	Logic Level Gate	30V	3.6A	100 mOhm @ 1.8A, 10V	1V @ 250µA	25nC @ 10V	440pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDPC8014AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 20A/40A FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 40A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	Package: 8-PowerWDFN	Stock5,856	Standard	25V	20A, 40A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
EM6J1T2R	Rohm Semiconductor	MOSFET 2P-CH 20V 0.2A EMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock517,212	Logic Level Gate	20V	200mA	1.2 Ohm @ 200mA, 4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
CTLDM7120-M832DS TR	Central Semiconductor Corp	MOSFET 2N-CH 20V 1A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1.65W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	Package: 8-TDFN Exposed Pad	Stock28,716	Logic Level Gate	20V	1A (Ta)	100 mOhm @ 500mA, 4.5V	1.2V @ 1mA	2.4nC @ 4.5V	220pF @ 10V	1.65W	-65°C ~ 150°C (TJ)	Surface Mount	8-TDFN Exposed Pad	TLM832DS
DMC3025LSDQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.5A/4.2A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Power - Max: 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Stock30,333	-	30V	6.5A (Ta), 4.2A (Ta)	20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V	2V @ 250µA	4.6nC @ 4.5V, 5.1nC @ 4.5V	501pF @ 15V, 590pF @ 25V	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GSF7002DW	Good-Ark Semiconductor	MOSFET 2N-CH 60V 0.34A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock16,125	-	60V	340mA (Ta)	5Ohm @ 500mA, 10V	2.5V @ 1mA	-	40pF @ 10V	150mW (Ta)	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MSCSM70VR1M03CT6AG	Microchip Technology	SIC 2N-CH 700V 585A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 585A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 1075nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 700V Power - Max: 1.625kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	700V	585A (Tc)	3.8mOhm @ 200A, 20V	2.4V @ 20mA	1075nC @ 20V	22500pF @ 700V	1.625kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
ZXMC3A16DN8QTA	Diodes Incorporated	MOSFET N/P-CH 30V 6.4A/5.4A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	30V	6.4A (Ta), 5.4A (Ta)	35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V	1V @ 250µA	17.5nC @ 10V, 24.9nC @ 10V	796pF @ 25V, 970pF @ 15V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8901-TL-H	onsemi	MOSFET N/P-CH 1.8V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2053UFDB-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	7.7nC @ 10V	369pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
PJS6811_S1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 2.7A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Package: -	Request a Quote	-	20V	2.7A (Ta)	105mOhm @ 2.7A, 4.5V	1.2V @ 250µA	5.4nC @ 4.5V	416pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
DMP3021SPDW-13	Diodes Incorporated	MOSFET 2P-CH 30V 10A/39A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1799pF @ 15V Power - Max: 4.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	30V	10A (Ta), 39A (Tc)	18mOhm @ 8A, 10V	2.5V @ 250µA	34nC @ 10V	1799pF @ 15V	4.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
FF1MR12KM1H	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCH6619-TL-E	onsemi	PCH+PCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D2UV-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
UT6K3TCR1	Rohm Semiconductor	MOSFET 2N-CH 30V 5.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: HUML2020L8	Package: -	Stock8,985	-	30V	5.5A (Ta)	42mOhm @ 5A, 4.5V	1.5V @ 1mA	4nC @ 4.5V	450pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-PowerUDFN	HUML2020L8