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Infineon Technologies |
MOSFET 2P-CH 20V 0.39A SOT363
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 390mA
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock72,000 |
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Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.5A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,928 |
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Logic Level Gate | 30V | 4.5A | 35 mOhm @ 4.5A, 10V | 2.5V @ 250µA | 44nC @ 10V | 1464pF @ 25V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2N-CH 20V 4.5A SC-70
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock7,024 |
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Logic Level Gate | 20V | 4.5A | 34 mOhm @ 4A, 4.5V | 1.3V @ 250µA | 17nC @ 10V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Vishay Siliconix |
MOSFET 2P-CH 30V 2.5A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,776 |
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Logic Level Gate | 30V | 2.5A | 80 mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 8nC @ 5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2N-CH 20V 3.3A 8-TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock387,024 |
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Logic Level Gate | 20V | 3.3A | 45 mOhm @ 3.9A, 4.5V | 1.8V @ 250µA | 6nC @ 4.5V | - | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 6.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock56,232 |
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Logic Level Gate | 20V | 6.7A | 22 mOhm @ 6.7A, 4.5V | 1.5V @ 250µA | 19nC @ 4.5V | 1082pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET N/P-CH 30V/20V CPH6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 400mA, 1.5A
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
- Power - Max: 800mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-CPH
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock4,128 |
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Logic Level Gate | 30V, 20V | 400mA, 1.5A | 3.7 Ohm @ 80mA, 4V | - | 1.58nC @ 10V | 7pF @ 10V | 800mW | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-CPH |
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Nexperia USA Inc. |
MOSFET 2N-CH 100V 13A LFPAK56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A
- Rds On (Max) @ Id, Vgs: 82.5 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
- Power - Max: 38W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock4,384 |
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Standard | 100V | 13A | 82.5 mOhm @ 5A, 10V | 4V @ 1mA | 13.6nC @ 10V | 811pF @ 25V | 38W | - | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Vishay Siliconix |
MOSFET 2N-CH 40V 30A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock4,704 |
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Standard | 40V | 30A | 9.3 mOhm @ 9.7A, 10V | 2.5V @ 250µA | 38nC @ 10V | 1835pF @ 20V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.7A MICRO8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.7A
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: Micro8?
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock90,792 |
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Logic Level Gate | 30V | 1.7A | 270 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8? |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC
- FET Type: 2 P-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
- Vgs(th) (Max) @ Id: 1.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,920 |
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Standard | 10.6V | - | 270 Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Rohm Semiconductor |
MOSFET N/P-CH 30V/20V TUMT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
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Package: 6-SMD, Flat Leads |
Stock321,156 |
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Logic Level Gate | 30V, 20V | 1.4A, 1A | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 2nC @ 5V | 70pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
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Diodes Incorporated |
MOSFET 2P-CH 40V 4A 8SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock604,284 |
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Standard | 40V | 4A | 50 mOhm @ 6A, 10V | 3V @ 250µA | 13.9nC @ 10V | 674pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2N-CH 20V 2A SOT-26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
- Power - Max: 650mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock596,016 |
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Logic Level Gate | 20V | 2A | 100 mOhm @ 2.5A, 4.5V | 1V @ 250µA | - | 188pF @ 10V | 650mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Renesas Electronics Corporation |
MOSFET 2N-CH 20V 8.6A 6HWSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.6A
- Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-VFDFN Exposed Pad
- Supplier Device Package: 6-HWSON
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Package: - |
Request a Quote |
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Logic Level Gate | 20V | 8.6A | 17.5mOhm @ 4A, 4.5V | 1.5V @ 1mA | 6nC @ 4V | 564pF @ 10V | 700mW | - | Surface Mount | 6-VFDFN Exposed Pad | 6-HWSON |
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Diodes Incorporated |
MOSFET 2P-CH 2.8A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
Request a Quote |
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- | - | 2.8A (Ta) | 95mOhm @ 2.7A, 10V | 2.1V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Good-Ark Semiconductor |
MOSFET 2P-CH 30V 18.4A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
- Power - Max: 8.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock17,598 |
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- | 30V | 18.4A (Tc) | 16mOhm @ 8A, 10V | 2.5V @ 250µA | 21nC @ 4.5V | 2510pF @ 15V | 8.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Microchip Technology |
MOSFET 2N-CH 600V 81A SP4
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP4
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Package: - |
Request a Quote |
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- | 600V | 81A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | SP4 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 22A/85A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
- Power - Max: 24W, 75W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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Package: - |
Stock8,808 |
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- | 30V | 22A (Tc), 85A (Tc) | 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V | 2.1V @ 250µA, 1.9V @ 250µA | 15nC @ 4.5V, 65nC @ 4.5V | 1075pF @ 15V, 5560pF @ 15V | 24W, 75W | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x6) |
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onsemi |
NCH+NCH 2.5V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
MOSFET 2N-CH 50V 0.1A SC59
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-59-6
- Supplier Device Package: SC-59
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Package: - |
Request a Quote |
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Logic Level Gate | 50V | 100mA | 25Ohm @ 10mA, 10V | 1.8V @ 1µA | - | 16pF @ 5V | 300mW | 150°C (TJ) | Surface Mount | SC-59-6 | SC-59 |
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Goford Semiconductor |
MOSFET 30V 16A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
- Power - Max: 1.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock12,000 |
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- | 30V | 16A (Tc) | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2835pF @ 15V | 1.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Goford Semiconductor |
MOSFET P+P-CH 30V 9A SOP-8L DUAL
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
- Power - Max: 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock11,850 |
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- | 30V | 9A (Tc) | 22mOhm @ 3A, 10V | 2V @ 250µA | 24.5nC @ 10V | 1277pF @ 15V | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2P-CH 30V 7A 8DSO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: - |
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Logic Level Gate | 30V | 7A | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 49nC @ 10V | 2678pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock84 |
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Goford Semiconductor |
MOSFET 20V 1.3A/1.1A SOT23-6L
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
- Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
- Power - Max: 1.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
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Package: - |
Stock9,000 |
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- | 20V | 1.3A (Tc), 1.1A (Tc) | 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V | 1V @ 250µA, 800mV @ 250µA | 1nC @ 4.5V, 1.22nC @ 4.5V | 146pF @ 10V, 177pF @ 10V | 1.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |
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Microchip Technology |
SIC 2N-CH 700V 689A SP6C LI
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 24mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
- Power - Max: 1882W (Tc)
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
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Package: - |
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- | 700V | 689A (Tc) | 3.2mOhm @ 240A, 20V | 2.4V @ 24mA (Typ) | 1290nC @ 20V | 27000pF @ 700V | 1882W (Tc) | - | Chassis Mount | Module | SP6C LI |
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Diodes Incorporated |
MOSFET 2N-CH 100V 18A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
- Power - Max: 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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Package: - |
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- | 100V | 18A (Tc) | 36mOhm @ 10A, 10V | 2.5V @ 250µA | 11.9nC @ 10V | 683pF @ 50V | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXC) |