Page 33 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AUIRF7103Q
Infineon Technologies

MOSFET 2N-CH 50V 3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,992
IRF7757TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 4.8A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock7,488
APTC90DSK12T1G
Microsemi Corporation

MOSFET 2N-CH 900V 30A SP1

Package: SP1

Stock2,400
SI6967DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock6,160
SIA950DJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 190V 0.95A SC-70-6

Package: PowerPAK? SC-70-6 Dual

Stock3,040
DMC3035LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.9A/5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock564,312
IPG20N06S4L14AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock7,104
APTM50AM35FTG
Microsemi Corporation

MOSFET 2N-CH 500V 99A SP4

Package: SP4

Stock4,688
SIR770DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock4,256
SIZ340DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A SOT-23

Package: 8-PowerWDFN

Stock4,576
SQJ960EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 8A

Package: PowerPAK? SO-8 Dual

Stock2,576
SI5997DU-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 6A PPAK CHIPFET

Package: PowerPAK? ChipFET? Dual

Stock11,712
EM6K7T2R
Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

Package: SOT-563, SOT-666

Stock511,500
SI4830CDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock19,764
IRF7530TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock134,340
DMN6040SSDQ-13
Diodes Incorporated

MOSFET N-CH 60V 5.0A SO-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock54,042
PJT7872B_R1_00001
Panjit International Inc.

MOSFET 2N-CH 60V 0.25A SOT363

Package: -

Stock7,191
MSCSM70AM025D3AG
Microchip Technology

SIC 2N-CH 700V 689A

Package: -

Request a Quote
OP526-005
WeEn Semiconductors

MOSFET

Package: -

Request a Quote
DMC62D2SV-7
Diodes Incorporated

MOSFET N/P-CH 60V 0.48A SOT563

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7103Q	Infineon Technologies	MOSFET 2N-CH 50V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,992	Standard	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	15nC @ 10V	255pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7757TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 4.8A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock7,488	Logic Level Gate	20V	4.8A	35 mOhm @ 4.8A, 4.5V	1.2V @ 250µA	23nC @ 4.5V	1340pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTC90DSK12T1G	Microsemi Corporation	MOSFET 2N-CH 900V 30A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock2,400	Super Junction	900V	30A	120 mOhm @ 26A, 10V	3.5V @ 3mA	270nC @ 10V	6800pF @ 100V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI6967DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock6,160	Logic Level Gate	8V	-	30 mOhm @ 5A, 4.5V	450mV @ 250µA (Min)	40nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SIA950DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 190V 0.95A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 190V Current - Continuous Drain (Id) @ 25°C: 950mA Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V Power - Max: 7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock3,040	Logic Level Gate	190V	950mA	3.8 Ohm @ 360mA, 4.5V	1.4V @ 250µA	4.5nC @ 10V	90pF @ 100V	7W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMC3035LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.9A/5A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock564,312	Logic Level Gate	30V	6.9A, 5A	35 mOhm @ 6.9A, 10V	2.1V @ 250µA	8.6nC @ 10V	384pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IPG20N06S4L14AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: 8-PowerVDFN	Stock7,104	Logic Level Gate	60V	20A	13.7 mOhm @ 17A, 10V	2.2V @ 20µA	39nC @ 10V	2890pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
APTM50AM35FTG	Microsemi Corporation	MOSFET 2N-CH 500V 99A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock4,688	Standard	500V	99A	39 mOhm @ 49.5A, 10V	5V @ 5mA	280nC @ 10V	14000pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SIR770DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 17.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock4,256	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.8V @ 250µA	21nC @ 10V	900pF @ 15V	17.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SIZ340DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A SOT-23 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 40A Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15.6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 16.7W, 31W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	Package: 8-PowerWDFN	Stock4,576	Standard	30V	30A, 40A	9.5 mOhm @ 15.6A, 10V	2.4V @ 250µA	19nC @ 10V	760pF @ 15V	16.7W, 31W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SQJ960EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock2,576	Logic Level Gate	60V	8A	36 mOhm @ 5.3A, 10V	2.5V @ 250µA	20nC @ 10V	735pF @ 25V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5997DU-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 6A PPAK CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 54 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock11,712	Logic Level Gate	30V	6A	54 mOhm @ 3A, 10V	2.4V @ 250µA	14.5nC @ 10V	430pF @ 15V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
EM6K7T2R	Rohm Semiconductor	MOSFET 2N-CH 20V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock511,500	Logic Level Gate	20V	200mA	1.2 Ohm @ 200mA, 2.5V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
SI4830CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock19,764	Logic Level Gate	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7530TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 5.4A MICRO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock134,340	Standard	20V	5.4A	30 mOhm @ 5.4A, 4.5V	1.2V @ 250µA	26nC @ 4.5V	1310pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
DMN6040SSDQ-13	Diodes Incorporated	MOSFET N-CH 60V 5.0A SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock54,042	Standard	60V	5A (Ta)	40 mOhm @ 4.5A, 10V	3V @ 250µA	22.4nC @ 10V	1287pF @ 25V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PJT7872B_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock7,191	-	60V	250mA (Ta)	3Ohm @ 600mA, 10V	2.5V @ 250µA	0.82nC @ 4.5V	34pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MSCSM70AM025D3AG	Microchip Technology	SIC 2N-CH 700V 689A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Power - Max: 1.882kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
OP526-005	WeEn Semiconductors	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC62D2SV-7	Diodes Incorporated	MOSFET N/P-CH 60V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	480mA (Ta), 320mA (Ta)	1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.04nC @ 10V, 1.1nC @ 10V	41pF @ 30V, 40pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SD5401CY-SOIC-14L-ROHS	Linear Integrated Systems, Inc.	MOSFET 4N-CH 10V 0.05A 14SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 10V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 75Ohm @ 1mA, 5V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	Package: -	Stock29,919	-	10V	50mA (Ta)	75Ohm @ 1mA, 5V	1.5V @ 1µA	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
NXH008T120M3F2PTHG	onsemi	8M 1200V 40A M3S SIC TNPC MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V Vgs(th) (Max) @ Id: 4.4V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V Power - Max: 371W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 29-PIM (56.7x42.5)	Package: -	Request a Quote	-	1200V (1.2kV)	129A (Tc)	11.5mOhm @ 100A, 18V	4.4V @ 60mA	454nC @ 20V	9129pF @ 800V	371W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	29-PIM (56.7x42.5)
SQ1912AEEH-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.8A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: -	Stock23,124	-	20V	800mA (Tc)	280mOhm @ 1.2A, 4.5V	1.5V @ 250µA	1.25nC @ 4.5V	27pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SFT1405-TL-E-SY	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NVMFD5C466NLT1G	onsemi	MOSFET 2N-CH 40V 14A/52A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Power - Max: 3W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	40V	14A (Ta), 52A (Tc)	7.4mOhm @ 10A, 10V	2.2V @ 30µA	7nC @ 4.5V	997pF @ 25V	3W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NXH003P120M3F2PTNG	onsemi	SILICON CARBIDE (SIC) MODULE EL FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 4.4V @ 160mA Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V Power - Max: 1.48kW (Tj) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 36-PIM (56.7x62.8)	Package: -	Stock30	-	1200V (1.2kV)	435A (Tj)	5mOhm @ 200A, 18V	4.4V @ 160mA	1200nC @ 20V	20889pF @ 800V	1.48kW (Tj)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	36-PIM (56.7x62.8)
DMC2710UDWQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock18,000	-	20V	750mA (Ta), 600mA (Ta)	450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSS84KDW-TP	Micro Commercial Co	MOSFET 2P-CH 60V 0.32A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power - Max: 420mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock13,896	-	60V	320mA (Ta)	6Ohm @ 300mA, 10V	2V @ 250µA	1.6nC @ 10V	32pF @ 30V	420mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363