|
|
Vishay Siliconix |
MOSFET 2P-CH 8V 4A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
|
Package: 8-SMD, Flat Lead |
Stock3,584 |
|
Logic Level Gate | 8V | 4A | 70 mOhm @ 3.3A, 4.5V | 1V @ 250µA | 14nC @ 8V | 420pF @ 4V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
|
|
Vishay Siliconix |
MOSFET 2P-CH 8V 6-TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock229,740 |
|
Logic Level Gate | 8V | - | 125 mOhm @ 2.5A, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | - | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V/12V 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 12V
- Current - Continuous Drain (Id) @ 25°C: 4.3A, 6.8A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,848 |
|
Logic Level Gate | 30V, 12V | 4.3A, 6.8A | 55 mOhm @ 4.3A, 10V | 3V @ 250µA | 7.7nC @ 5V | 530pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock104,232 |
|
Logic Level Gate | 30V | 5A, 4.5A | 51 mOhm @ 5A, 10V | 2.5V @ 1mA | 3.9nC @ 5V | 230pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Microsemi Corporation |
MOSFET 4N-CH 600V 95A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 95A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 462W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock7,888 |
|
Super Junction | 600V | 95A | 24 mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi Corporation |
MOSFET 2N-CH 500V 51A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock3,504 |
|
Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi Corporation |
MOSFET 2N-CH 500V 51A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock4,496 |
|
Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
IXYS |
MOSFET 6N-CH 100V 90A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
|
Package: 17-SMD, Gull Wing |
Stock4,944 |
|
Standard | 100V | 90A | 8.5 mOhm @ 80A, 10V | 4.5V @ 250µA | 90nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL? |
|
|
Fairchild/ON Semiconductor |
N-CHANNEL POWERTRENCH MOSFET POW
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 15V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: -
|
Package: 8-PowerWDFN |
Stock5,264 |
|
Standard | 30V | - | - | 3V @ 250µA | 94nC @ 10V | 7080pF @ 15V | 50W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | - |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7A 8-TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock13,121,976 |
|
Logic Level Gate | 20V | 7A | 20 mOhm @ 7A, 4.5V | 1.1V @ 250µA | 14nC @ 4.5V | 1295pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7A 8-TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock12,697,272 |
|
Logic Level Gate | 20V | 7A | 18 mOhm @ 7A, 10V | 1V @ 250µA | 18nC @ 10V | 780pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 3.4A 6-TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: SC-74, SOT-457 |
Stock627,216 |
|
Logic Level Gate | 30V | 3.4A | 60 mOhm @ 3.4A, 10V | 1.5V @ 250µA | 10nC @ 10V | 235pF @ 15V | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Fairchild/ON Semiconductor |
MOSFET 5N-CH 650V 36A F1 MODULE
- FET Type: 5 N-Channel (Solar Inverter)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 36A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: F1 Module
- Supplier Device Package: F1
|
Package: F1 Module |
Stock6,888 |
|
Standard | 650V | 36A | 90 mOhm @ 27A, 10V | 3.8V @ 250µA | - | - | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | F1 Module | F1 |
|
|
Rohm Semiconductor |
MOSFET 2N-CH 20V 1.5A TUMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
|
Package: 6-SMD, Flat Leads |
Stock4,064 |
|
Logic Level Gate | 20V | 1.5A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
|
|
Rohm Semiconductor |
MOSFET N/P-CH 20V 2.5A TSST8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-TSST
|
Package: 8-SMD, Flat Lead |
Stock3,424 |
|
Logic Level Gate, 1.5V Drive | 20V | 2.5A, 2.4A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 4.4A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock477,192 |
|
Logic Level Gate | 30V | 4.4A | 36 mOhm @ 5.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 0.88A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 880mA
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock657,162 |
|
Logic Level Gate | 20V | 880mA | 400 mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
|
|
Cree/Wolfspeed |
MOSFET 6N-CH 1200V 87A MODULE
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 87A
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
- Power - Max: 337W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: Module |
Stock5,440 |
|
Standard | 1200V (1.2kV) | 87A | 34 mOhm @ 50A, 20V | 2.3V @ 2.5mA | 180nC @ 20V | 2.810nF @ 800V | 337W | 150°C (TJ) | Chassis Mount | Module | Module |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 4A 1206-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
- Power - Max: 3.12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
|
Package: 8-SMD, Flat Lead |
Stock324,012 |
|
Logic Level Gate | 30V | 4A | 65 mOhm @ 3.1A, 10V | 3V @ 250µA | 7nC @ 10V | 220pF @ 15V | 3.12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
|
|
Rohm Semiconductor |
MOSFET N/P-CH 45V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock6,465 |
|
- | 45V | 4.5A (Ta), 3.5A (Ta) | 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V | 2.5V @ 1mA | 9.6nC @ 5V, 18.2nC @ 5V | 550pF @ 10V, 1700pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Micro Commercial Co |
N-CHANNEL MOSFET,PDFN5060-8D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 30V
- Power - Max: 50W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PDFN5060-8D
|
Package: - |
Request a Quote |
|
- | 60V | 60A (Tc) | 6.5mOhm @ 20A, 10V | 2.5V @ 250µA | 34.5nC @ 10V | 1740pF @ 30V | 50W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | PDFN5060-8D |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 17A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (3.37x1.47)
|
Package: - |
Request a Quote |
|
- | 30V | 17A (Ta) | 7.3mOhm @ 5A, 10V | 2V @ 250µA | 70nC @ 10V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 10-SMD, No Lead | 10-AlphaDFN (3.37x1.47) |
|
|
Microchip Technology |
SIC 4N-CH 1200V 55A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
- Power - Max: 245W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
|
Package: - |
Stock18 |
|
- | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 23.7A 8PWRPAIR
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
- Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
- Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
|
Package: - |
Stock40,779 |
|
- | 30V | 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V | 2.2V @ 250µA | 18nC @ 10V, 79nC @ 10V | 790pF @ 15V, 3655pF @ 15V | 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (6x5) |
|
|
Diodes Incorporated |
BSS FAMILY SOT563 T&R 10K
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 238mA (Ta)
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
- | 60V | 238mA (Ta) | 8Ohm @ 100mA, 5V | 2.1V @ 250µA | 0.6nC @ 5V | 42pF @ 30V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Rohm Semiconductor |
MOSFET 2N-CH 60V 3A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
|
Package: - |
Stock3,471 |
|
- | 60V | 3A (Ta) | 90mOhm @ 3A, 10V | 2.5V @ 1mA | 3.1nC @ 10V | 135pF @ 30V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
|
|
Central Semiconductor Corp |
MOSFET 2N-CH 60V 0.28A SOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
|
Package: - |
Request a Quote |
|
- | 60V | 280mA | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 50pF @ 25V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
|
|
Nexperia USA Inc. |
MOSFET 2N-CH 65V 11.6A 20SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
- Power - Max: 4.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SO
|
Package: - |
Request a Quote |
|
Logic Level Gate | 65V | 11.6A (Tc) | 15.5mOhm @ 10A, 10V | 2V @ 1mA | 30.8nC @ 5V | 2660pF @ 25V | 4.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SO |