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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Power - Max: 2.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric MA
- Supplier Device Package: DIRECTFET? MA
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Package: DirectFET? Isometric MA |
Stock6,048 |
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Logic Level Gate | 30V | 15A | 6.6 mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET? Isometric MA | DIRECTFET? MA |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 9.4A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,872 |
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Logic Level Gate | 20V | - | 14 mOhm @ 9.4A, 10V | 1V @ 250µA | 17.9nC @ 4.5V | 1810pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 20V 1.3A SC-70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock414,300 |
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Logic Level Gate | 20V | 1.3A | 168 mOhm @ 1.4A, 4.5V | 1V @ 250µA | 4.1nC @ 8V | 110pF @ 10V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 8.2A 8TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.2A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock120,360 |
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Logic Level Gate | 30V | 8.2A | 15 mOhm @ 8.2A, 4.5V | 1.5V @ 250µA | 30nC @ 4.5V | 1840pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2N-CH 25V 16A/31A TISON8
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 11A, 31A
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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Package: 8-PowerTDFN |
Stock3,136 |
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Logic Level Gate, 4.5V Drive | 25V | 11A, 31A | 4.6 mOhm @ 25A, 10V | 2V @ 250µA | 6.6nC @ 4.5V | 4500pF @ 12V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Vishay Siliconix |
MOSFET 2P-CH 30V 4.5A SC-70-6L
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 6.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock4,080 |
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Logic Level Gate | 30V | 4.5A | 87 mOhm @ 2.9A, 10V | 2.2V @ 250µA | 9nC @ 10V | 275pF @ 15V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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ON Semiconductor |
MOSFET N/P-CH 60V 3A/2.5A VEC8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SOT-28FL/VEC8
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Package: 8-SMD, Flat Lead |
Stock6,832 |
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Logic Level Gate, 4V Drive | 60V | 3A, 2.5A | 80 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 10nC @ 10V | 505pF @ 20V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | SOT-28FL/VEC8 |
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Infineon Technologies |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock380,244 |
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Logic Level Gate | 30V | 6.8A, 4.6A | 27 mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Advanced Linear Devices Inc. |
QUAD P-CHANNEL EPAD MATCHED PAIR
- FET Type: 4 P-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 180mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock7,312 |
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Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 6A/7A SOP8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,168 |
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Logic Level Gate | 30V | 6A, 7A | 30 mOhm @ 6A, 10V | 2.5V @ 1mA | 7.2nC @ 5V | 520pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/18A PWR56
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 18A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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Package: 8-PowerTDFN |
Stock29,940 |
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Logic Level Gate | 30V | 13A, 18A | 10 mOhm @ 13A, 10V | 2.7V @ 250µA | 24nC @ 10V | 1605pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 7.5A UDFN2030-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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Package: 6-UFDFN Exposed Pad |
Stock6,896 |
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Standard | 20V | 7.5A | 20.2 mOhm @ 4.5A, 4.5V | 1V @ 250µA | 18.4nC @ 8V | 887pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
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Vishay Siliconix |
MOSFET 2N-CH 30V 16A 6-POWERPAIR
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A, 35A
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair?
- Supplier Device Package: 6-PowerPair?
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Package: 6-PowerPair? |
Stock29,772 |
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Logic Level Gate | 30V | 16A, 35A | 9.3 mOhm @ 15A, 10V | 2.2V @ 250µA | 24nC @ 10V | 830pF @ 15V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair? | 6-PowerPair? |
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STMicroelectronics |
AUTOMOTIVE-GRADE DUAL N-CHANNEL
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
- Power - Max: 3.2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock23,898 |
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Logic Level Gate | 60V | 8A (Ta) | 24 mOhm @ 4A, 10V | 2.5V @ 250µA | 27nC @ 10V | 1340pF @ 25V | 3.2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 20V 2.11A 6DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.11A
- Rds On (Max) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
- Power - Max: 530mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: X2-DFN1310-6
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Package: 6-XFDFN Exposed Pad |
Stock169,110 |
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Logic Level Gate | 20V | 2.11A | 195 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 64.3pF @ 25V | 530mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | X2-DFN1310-6 |
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Goford Semiconductor |
MOSFET 100V 3A/3.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
- Power - Max: 2W (Tc), 3.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock12,000 |
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- | 100V | 3A (Tc), 3.5A (Tc) | 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V | 2.5V @ 250µA | 22nC @ 10V, 23nC @ 10V | 668pF @ 50V, 1732pF @ 50V | 2W (Tc), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2N-CH 20V 6A 6UDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: - |
Request a Quote |
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- | 20V | 6A (Ta) | 25mOhm @ 4A, 4.5V | 1V @ 250µA | 12.3nC @ 10V | 486pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Good-Ark Semiconductor |
MOSFET, N-CH, DUAL, 19.50A, 30V,
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Power - Max: 27W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x3)
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Package: - |
Stock27,000 |
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- | 30V | 10.8A (Ta), 19.5A (Tc) | 10.5mOhm @ 10A, 10V | 2.5V @ 250µA | 31nC @ 10V | 900pF @ 25V | 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x3) |
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onsemi |
MOSFET 2N-CH 40V 10.5A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Power - Max: 3.1W (Ta), 23W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Stock4,500 |
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- | 40V | 10.5A (Ta), 29A (Tc) | 14.5mOhm @ 7.5A, 10V | 2.2V @ 20µA | 8.1nC @ 10V | 420pF @ 25V | 3.1W (Ta), 23W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Goford Semiconductor |
MOSFET 2P-CH 40V 9A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
- Power - Max: 2.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,497 |
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- | 40V | 9A (Tc) | 20mOhm @ 7A, 10V | 2.5V @ 250µA | 42nC @ 10V | 2365pF @ 20V | 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2N-CH 20V 0.92A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock29,550 |
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- | 20V | 920mA (Ta) | 450mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.6nC @ 4.5V | 42pF @ 16V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Infineon Technologies |
MOSFET N/P-CH 25V 8-SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
- Power - Max: 2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: - |
Request a Quote |
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- | 25V | 3.5A, 2.3A | 100mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | 2W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Nexperia USA Inc. |
MOSFET 2N-CH 20V 4A 6HUSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
- Power - Max: 490mW (Ta), 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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Package: - |
Stock14,370 |
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- | 20V | 4A (Ta) | 40mOhm @ 3A, 4.5V | 900mV @ 250µA | - | 660pF @ 10V | 490mW (Ta), 8.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-HUSON (2x2) |
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onsemi |
SIC 4N-CH 1200V 51A 22PIM
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
- Power - Max: 119W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (33.8x42.5)
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 22-PIM (33.8x42.5) |
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Micro Commercial Co |
MOSFET 2P-CH 30V 3A SOT23-6L
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
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Package: - |
Stock26,025 |
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- | 30V | 3A | 90mOhm @ 3A, 10V | 2.5V @ 250µA | 7.5nC @ 15V | 365pF @ 10V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |
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Vishay Siliconix |
MOSFET 2P-CH 30V 7.5A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Power - Max: 3.3W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock138,447 |
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- | 30V | 7.5A (Tc) | 35mOhm @ 5.9A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1020pF @ 25V | 3.3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
SIC 2N-CH 1200V 495A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 18mA | 1392nC @ 20V | 18100pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Vishay Siliconix |
MOSFET N/P-CH 100V 15A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V
- Power - Max: 27W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Stock9,000 |
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- | 100V | 15A (Tc), 9.5A (Tc) | 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V | 2.5V @ 250µA | 15nC @ 10V, 20nC @ 10V | 600pF @ 25V, 650pF @ 25V | 27W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |