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Infineon Technologies |
MOSFET 2N-CH 30V 3.5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock189,156 |
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Logic Level Gate | 30V | 3.5A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 20V SC89-6L
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
- Power - Max: 380mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock409,488 |
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Standard | 20V | 600mA, 500mA | 650 mOhm @ 500mA, 4.5V | 1V @ 250µA | 1nC @ 4.5V | 45pF @ 10V | 380mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Vishay Siliconix |
MOSFET 2P-CH 20V 7.7A PPAK SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.7A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock3,424 |
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Logic Level Gate | 20V | 7.7A | 17 mOhm @ 12A, 4.5V | 1V @ 600µA | 74nC @ 4.5V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Vishay Siliconix |
MOSFET N/P-CH 20V 6A CHIPFET
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Power - Max: 8.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? ChipFET? Dual
- Supplier Device Package: PowerPAK? ChipFet Dual
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Package: PowerPAK? ChipFET? Dual |
Stock7,888 |
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Logic Level Gate | 20V | 6A | 39 mOhm @ 4.4A, 4.5V | 1V @ 250µA | 16nC @ 8V | 520pF @ 10V | 8.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFET? Dual | PowerPAK? ChipFet Dual |
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Microsemi Corporation |
MOSFET 2N-CH 200V 208A SP4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 208A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 781W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock2,784 |
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Standard | 200V | 208A | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | 781W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 4N-CH 600V 39A SP3F
- FET Type: 4 N-Channel (H-Bridge) + Bridge Rectifier
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,504 |
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Standard | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | - | SP3 | SP3 |
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IXYS |
MOSFET 2N-CH 200V 33A I4-PAC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 33A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Power - Max: 125W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock5,040 |
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Standard | 200V | 33A | 40 mOhm @ 30A, 10V | 4.5V @ 250µA | 90nC @ 10V | 3700pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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Diodes Incorporated |
MOSFET 2NCH 60V 8.2A POWERDI
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
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Package: 8-PowerTDFN |
Stock6,240 |
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Standard | 60V | 8.2A, 32A | 25 mOhm @ 15A, 10V | 3V @ 250µA | 20.1nC @ 10V | 1143pF @ 25V | 1.5W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
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ON Semiconductor |
MOSFET 2N-CH 20V 4A EMH8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-EMH
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Package: 8-SMD, Flat Lead |
Stock5,200 |
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Logic Level Gate | 20V | 4A | 45 mOhm @ 4A, 4.5V | - | 4.7nC @ 4.5V | 345pF @ 10V | 1.2W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 4.5A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
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Package: 6-UDFN Exposed Pad |
Stock3,888 |
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Logic Level Gate | 30V | 4.5A | 37 mOhm @ 2A, 10V | 1.4V @ 250µA | 10nC @ 10V | 235pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN-EP (2x2) |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V SOT963
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta)
- Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: SOT-963 |
Stock6,080 |
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Standard | 20V | 450mA (Ta), 310mA (Ta) | 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V, 0.4nC @ 4.5V | 27.6pF @ 15V, 28.7pF @ 15V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Diodes Incorporated |
MOSFET 2N-CH 50V 0.36A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 360mA
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock4,288 |
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Logic Level Gate | 50V | 360mA | 1.6 Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | 46pF @ 25V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: 25 Ohm
- Vgs(th) (Max) @ Id: 10mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock7,088 |
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Logic Level Gate | 10.6V | 80mA | 25 Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 40V 6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,688 |
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Logic Level Gate | 40V | 6A | 29 mOhm @ 6A, 10V | 3V @ 250µA | 11nC @ 5V | 955pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Central Semiconductor Corp |
MOSFET 2N-CH 30V 3.6A TLM832DS
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
- Power - Max: 1.65W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TDFN Exposed Pad
- Supplier Device Package: TLM832DS
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Package: 8-TDFN Exposed Pad |
Stock6,656 |
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Standard | 30V | 3.6A | 40 mOhm @ 1.8A, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | 1.65W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TDFN Exposed Pad | TLM832DS |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN
- Supplier Device Package: 4-AlphaDFN (1.57x1.57)
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Package: 4-XFDFN |
Stock26,538 |
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Standard | - | - | - | - | 9.5nC @ 4.5V | - | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFDFN | 4-AlphaDFN (1.57x1.57) |
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Central Semiconductor Corp |
MOSFET N/P-CH 20V 0.65A SOT563
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 650mA
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock22,854 |
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Logic Level Gate | 20V | 650mA | 230 mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.58nC @ 4.5V | 100pF @ 16V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 6A PPAK 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
- Power - Max: 20.8W
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
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Package: PowerPAK? 1212-8 Dual |
Stock22,800 |
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Standard | 40V | 6A | 32 mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | 670pF @ 20V | 20.8W | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
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Nexperia USA Inc. |
MOSFET 2N-CH 100V 21.4A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 21.4A (Ta)
- Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
- Power - Max: 53W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Stock3,900 |
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- | 100V | 21.4A (Ta) | 37.6mOhm @ 5A, 10V | 4V @ 1mA | 25.9nC @ 10V | 1533pF @ 25V | 53W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 24A/50A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
- Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
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Package: - |
Stock9,000 |
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- | 30V | 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc) | 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V | 1.9V @ 250µA | 40nC @ 10V, 30nC @ 10V | 1520pF @ 15V | 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN-EP (3.3x3.3) |
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Infineon Technologies |
MOSFET 2N-CH 55V 20A 8TDSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: - |
Stock80,658 |
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Logic Level Gate | 55V | 20A | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | 410pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Vishay Siliconix |
MOSFET 2N-CH 80V 8.9A 8PWRPAIR
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
- Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
- Power - Max: 4.3W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (3.3x3.3)
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Package: - |
Stock2,508 |
|
- | 80V | 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) | 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V | 2.4V @ 250µA | 27nC @ 10V | 820pF @ 40V | 4.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) |
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Taiwan Semiconductor Corporation |
MOSFET 2N-CH 20V 6A 8TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 0.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
- Power - Max: 1.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: - |
Request a Quote |
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- | 20V | 6A (Ta) | 30mOhm @ 6A, 4.5V | 0.6V @ 250µA | 7nC @ 4.5V | 565pF @ 8V | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Diodes Incorporated |
MOSFET N/P-CH 60V/50V SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V, 50V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), 130mA (Ta)
- Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
- Power - Max: 200mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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- | 60V, 50V | 115mA (Ta), 130mA (Ta) | 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V | 2.5V @ 250µA, 2V @ 1mA | - | 50pF @ 25V, 45pF @ 25V | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Vishay Siliconix |
MOSFET N/P-CH 20V 6.6A 8-SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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Logic Level Gate | 20V | 6.6A, 3.8A | 20mOhm @ 9.1A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | - | 1.3W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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WeEn Semiconductors |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Power - Max: 69W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PDFN5060-8D
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Package: - |
Request a Quote |
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- | 60V | 50A (Tc) | 9mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | 2100pF @ 25V | 69W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PDFN5060-8D |
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Micro Commercial Co |
MOSFET 2N-CH 60V 0.34A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Power - Max: 150mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock7,200 |
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- | 60V | 340mA | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 40pF @ 10V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |