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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.6A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,560 |
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Logic Level Gate | 20V | 7.6A | 23 mOhm @ 7.6A, 10V | 1.1V @ 250µA | 12.5nC @ 10V | 630pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 20V 4.7A 6UDFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock2,688 |
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Standard | 20V | 4.7A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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GeneSiC Semiconductor |
SIC PHASE LEG BRIDGE 100A 1.2KV
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,328 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET 2P-CH 12V 7.4A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.4A
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,856 |
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Logic Level Gate | 12V | 7.4A | 14 mOhm @ 9.8A, 4.5V | 1V @ 500µA | 70nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 75V 3.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,304 |
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Logic Level Gate | 75V | 3.6A | 48 mOhm @ 4.8A, 10V | 3V @ 250µA | 21nC @ 10V | - | 1.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 20V 2.5A 6-TSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW, 83mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock618,720 |
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Logic Level Gate | 20V | 2.5A, 570mA | 80 mOhm @ 3A, 4.5V | 450mV @ 250µA (Min) | 7.5nC @ 4.5V | - | 830mW, 83mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Microsemi Corporation |
MOSFET 4N-CH 600V 20A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock6,176 |
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Standard | 600V | 20A | 276 mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 5316pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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TT Electronics/Optek Technology |
MOSFET N/P-CH 90V 2A/1.1A SMD
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 90V
- Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-SMD
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Package: 6-SMD, No Lead |
Stock2,528 |
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Standard | 90V | 2A, 1.1A | 5 Ohm @ 1A, 10V | 2.5V @ 1mA | - | 70pF @ 25V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | 6-SMD |
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ON Semiconductor |
MOSFET 2P-CH 30V 5.5A ECH8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
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Package: 8-SMD, Flat Lead |
Stock129,696 |
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Logic Level Gate | 30V | 5.5A | 39 mOhm @ 2.5A, 10V | - | 13nC @ 10V | 600pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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Diodes Incorporated |
MOSFET 2NCH 20V 14.5A UDFN2030
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.5A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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Package: 6-UFDFN Exposed Pad |
Stock3,536 |
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Standard | 20V | 14.5A | 5.4 mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 42.3nC @ 10V | 1418pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
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ON Semiconductor |
MOSFET N/P-CH 20V 2A/1.5A MCPH6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
- Rds On (Max) @ Id, Vgs: 136 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
- Power - Max: 800mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-MCPH
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Package: 6-SMD, Flat Leads |
Stock3,200 |
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Logic Level Gate, 1.8V Drive | 20V | 2A, 1.5A | 136 mOhm @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | 128pF @ 10V | 800mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-MCPH |
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ON Semiconductor |
MOSFET 2N-CH 24V 5A CSP4
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA
- Supplier Device Package: -
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Package: 4-XFBGA |
Stock3,536 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 7.5nC @ 4.5V | - | 1.4W | 150°C (TJ) | Surface Mount | 4-XFBGA | - |
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Advanced Linear Devices Inc. |
QUAD P-CHANNEL EPAD MATCHED PAIR
- FET Type: 4 P-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 380mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock6,448 |
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Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Diodes Incorporated |
MOSFET 2N-CH 30V 3.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock26,394 |
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Logic Level Gate | 30V | 3.7A | 80 mOhm @ 2.2A, 10V | 2.8V @ 250µA | 27nC @ 10V | 320pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Vishay Siliconix |
MOSFET 2N-CH 30V 10A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.3W, 3.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock222,252 |
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Logic Level Gate | 30V | 10A, 10.5A | 18 mOhm @ 10A, 10V | 3V @ 250µA | 10nC @ 4.5V | - | 3.3W, 3.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 50V 0.305A SOT-26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 305mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 400mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock53,220 |
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Logic Level Gate | 50V | 305mA | 2 Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 400mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 2.9A DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-WDFN Exposed Pad |
Stock29,982 |
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Logic Level Gate | 30V | 2.9A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
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Infineon Technologies |
MOSFET 2N-CH 200V 9.1A TO-220FP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.1A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
- Power - Max: 21W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5 Full Pack
- Supplier Device Package: TO-220-5 Full-Pak
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Package: TO-220-5 Full Pack |
Stock15,504 |
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Standard | 200V | 9.1A | 100 mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1240pF @ 25V | 21W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.6A (Ta)
- Rds On (Max) @ Id, Vgs: 57mOhm @ 1A, 4.5V, 120mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA, 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.16nC @ 4.5V, 2.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V, 214pF @ 10V
- Power - Max: 670mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
|
Package: - |
Request a Quote |
|
- | 20V | 2A (Ta), 1.6A (Ta) | 57mOhm @ 1A, 4.5V, 120mOhm @ 1A, 4.5V | 1.1V @ 250µA, 1V @ 250µA | 3.16nC @ 4.5V, 2.9nC @ 4.5V | 188pF @ 10V, 214pF @ 10V | 670mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |
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onsemi |
NCH+PCH 4.5V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET 2N-CH 40V 42A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
- Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
- Power - Max: 46W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
|
Package: - |
Stock12,666 |
|
Logic Level Gate | 40V | 42A (Ta) | 13.6mOhm @ 10A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | 1160pF @ 25V | 46W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 20V 5.1A 8TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
- Power - Max: 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: - |
Request a Quote |
|
- | 20V | 5.1A (Ta) | 40mOhm @ 5.1A, 4.5V | 950mV @ 250µA | 17nC @ 4.5V | 930pF @ 10V | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N/P-CH 25V 0.68A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
Stock8,970 |
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- | 25V | 680mA (Ta), 460mA (Ta) | 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V | 1.1V @ 250µA | 1.64nC @ 4.5V, 1.1nC @ 4.5V | 50pF @ 10V, 63pF @ 10V | 700mW | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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EPC |
GANFET 2N-CH 30V 10A/40A DIE
- FET Type: GaNFET (Gallium Nitride)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Stock690 |
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- | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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onsemi |
MOSFET N-CHANNEL 8MLP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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