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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Power - Max: 2.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric MA
- Supplier Device Package: DIRECTFET? MA
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Package: DirectFET? Isometric MA |
Stock5,808 |
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Logic Level Gate | 30V | 15A | 6.6 mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET? Isometric MA | DIRECTFET? MA |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock430,128 |
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Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Renesas Electronics America |
MOSFET 2N-CH 60V 7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock2,224 |
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Standard | 60V | 7A | 35 mOhm @ 3.5A, 10V | - | 29nC @ 10V | 1300pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (3x3)
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Package: 8-WDFN Exposed Pad |
Stock75,624 |
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Logic Level Gate | 30V | 6.6A, 8.1A | 20 mOhm @ 6.6A, 10V | 2.4V @ 250µA | 6.5nC @ 10V | 460pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN-EP (3x3) |
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Vishay Siliconix |
MOSFET 2N-CH 30V 2.9A 1206-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock61,644 |
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Logic Level Gate | 30V | 2.9A | 85 mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 7.5nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Vishay Siliconix |
MOSFET 2P-CH 20V 1.6A 6-TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.6A
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,401,540 |
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Logic Level Gate | 20V | 1.6A | 185 mOhm @ 1.9A, 4.5V | 1.1V @ 250µA | 5nC @ 4.5V | - | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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ON Semiconductor |
MOSFET 2P-CH 8V 0.775A SOT-363
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 775mA
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
- Power - Max: 270mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,176 |
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Logic Level Gate | 8V | 775mA | 300 mOhm @ 570mA, 4.5V | 1V @ 250µA | 4nC @ 4.5V | 225pF @ 8V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 5A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock489,972 |
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Logic Level Gate | 30V | 5A | 48 mOhm @ 5A, 10V | 1.3V @ 250µA | 9nC @ 4.5V | 780pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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STMicroelectronics |
MOSFET 2N-CH 60V 20A 5X6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V
- Power - Max: 52W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat? (5x6)
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Package: 8-PowerVDFN |
Stock4,304 |
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Logic Level Gate | 60V | 20A | 43 mOhm @ 3A, 10V | 3V @ 250µA | 8.8nC @ 10V | 432pF @ 25V | 52W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat? (5x6) |
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Diodes Incorporated |
MOSFET N/P-CH 40V 7A/5.1A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,096 |
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Logic Level Gate | 40V | 7A, 5.1A | 24 mOhm @ 6A, 10V | 3V @ 250µA | 19.1nC @ 10V | 1060pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 7A 6-MLP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 50V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerWDFN
- Supplier Device Package: 12-Power3.3x5
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Package: 12-PowerWDFN |
Stock6,720 |
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Logic Level Gate | 100V | 7A | 19.5 mOhm @ 7A, 10V | 3V @ 250µA | 24nC @ 10V | 1585pF @ 50V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | 12-Power3.3x5 |
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Vishay Siliconix |
MOSFET ARRAY 2P-CH 60V 8SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
- Power - Max: 5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,272 |
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Standard | 60V | 8A (Tc) | 48 mOhm @ 4.3A, 10V | 2.5V @ 250µA | 65nC @ 10V | 1910pF @ 30V | 5W (Tc) | -55°C ~ 175°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2P-CH 20V 2.8A UDFN
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.8A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-UDFN (2x2)
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Package: 6-UDFN Exposed Pad |
Stock54,024 |
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Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | 920pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) |
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Rohm Semiconductor |
MOSFET N/P-CH 30V/20V 1.5A TSMT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock541,212 |
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Logic Level Gate | 30V, 20V | 1.5A | 230 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 1.6nC @ 4.5V | 80pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 3A TSST8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1A
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-TSST
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Package: 8-SMD, Flat Lead |
Stock5,616 |
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Logic Level Gate, 4V Drive | 30V | 3A | 71 mOhm @ 3A, 10V | 2.5V @ 1A | 2.5nC @ 5V | 140pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST |
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Diodes Incorporated |
MOSFET 2P-CH 12V 3.8A 6UDFN
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3.8A
- Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock94,506 |
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Standard | 12V | 3.8A | 61 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 17.9nC @ 8V | 915pF @ 6V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Rohm Semiconductor |
MOSFET 2N-CH 1200V 120A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 120A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.7V @ 22mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 780W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock4,992 |
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Standard | 1200V (1.2kV) | 120A | - | 2.7V @ 22mA | - | 14000pF @ 10V | 780W | -40°C ~ 150°C (TJ) | - | Module | Module |
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Central Semiconductor Corp |
MOSFET N/P-CH 30V 0.45A SOT-563
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 450mA
- Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.79nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Power - Max: 150mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock189,744 |
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Standard | 30V | 450mA | 460 mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79nC @ 4.5V | 45pF @ 25V | 150mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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onsemi |
MOSFET 2N-CH 30V 7A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
- Power - Max: 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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- | 30V | 7A (Ta) | 23mOhm @ 7A, 10V | 2.5V @ 250µA | 13nC @ 10V | 635pF @ 15V | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Vishay Siliconix |
MOSFET N/P-CH 60V 3A PPAK SO-8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
- Rds On (Max) @ Id, Vgs: 75mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W, 1.5W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Request a Quote |
|
Logic Level Gate | 60V | 3A, 3.2A | 75mOhm @ 4.6A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.4W, 1.5W | - | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Diodes Incorporated |
MOSFET 2N-CH 50V 0.46A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
- Power - Max: 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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- | 50V | 460mA (Ta) | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 1.4nC @ 10V | 49.5pF @ 25V | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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onsemi |
MOSFET 60V S08FL DUAL
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Micro Commercial Co |
MOSFET N/P-CH 30V 5.6A/4.4A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 4.4A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 680pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock1,266 |
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- | 30V | 5.6A (Ta), 4.4A (Ta) | 25mOhm @ 5.6A, 10V | 1.5V @ 250µA, 1.4V @ 250µA | 4.8nC @ 4.5V, 7.2nC @ 10V | 535pF @ 15V, 680pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Microchip Technology |
SIC 4N-CH 700V 124A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Stock15 |
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- | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Diodes Incorporated |
MOSFET 2N-CH 60V 9.2A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
- Power - Max: 1.46W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXD)
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Package: - |
Request a Quote |
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- | 60V | 9.2A (Ta), 24.5A (Tc) | 20.5mOhm @ 10A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 825pF @ 30V | 1.46W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXD) |
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Diotec Semiconductor |
MOSFET SO8 N 40V 0.028OHM 150C
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V
- Power - Max: 3.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: - |
Request a Quote |
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- | 40V | 7.6A (Tc) | 28mOhm @ 7A, 10V | 1.6V @ 250µA | 18nC @ 10V | 870pF @ 20V | 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT563 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Request a Quote |
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- | 30V | 620mA (Ta) | 900mOhm @ 420mA, 10V | 2.6V @ 250µA | 0.8nC @ 10V | 19pF @ 15V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Rohm Semiconductor |
SIC 2N-CH 1200V 300A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 91mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 1260W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock18 |
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- | 1200V (1.2kV) | 300A (Tc) | - | 5.6V @ 91mA | - | 14000pF @ 10V | 1260W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |