Page 52 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AO6604L_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V 6-TSOP

Package: SC-74, SOT-457

Stock3,840
FDS6898A_NF40
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,648
APTM10DUM05TG
Microsemi Corporation

MOSFET 2N-CH 100V 278A SP4

Package: SP4

Stock7,296
FDW2501NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5.5A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock1,439,760
FDM2509NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 8.7A 2X5MLP

Package: 6-WFDFN Exposed Pad

Stock104,400
IPG20N06S2L50AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock7,376
ALD114904PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock3,984
PMDT290UCE,115
Nexperia USA Inc.

MOSFET N/P-CH 20V SOT666

Package: SOT-563, SOT-666

Stock162,720
2N7002PV,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.35A SOT-666

Package: SOT-563, SOT-666

Stock2,192
QS8M51TR
Rohm Semiconductor

MOSFET N/P-CH 100V 2A/1.5A TSMT8

Package: 8-SMD, Flat Lead

Stock2,352
STS10DN3LH5
STMicroelectronics

MOSFET 2N-CH 30V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock71,088
FDG6301N
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.22A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock5,998,320
AON7804_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A/22A 8DFN

Package: -

Request a Quote
EMH2603-TL-E
onsemi

PCH+NCH 1.8V DRIVE SERIES

Package: -

Request a Quote
UHB50SC12E1BC3N
Qorvo

1200V/50A,SIC,HALF-BRIDGE,G3,E1B

Package: -

Request a Quote
CMXDM7002A-BK-PBFREE
Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT26

Package: -

Request a Quote
MSCSM120TLM08CAG
Microchip Technology

SIC 4N-CH 1200V 333A SP6C

Package: -

Stock15
CAB011M12FM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 105A MODULE

Package: -

Stock15
MSCSM70TLM07CAG
Microchip Technology

SIC 4N-CH 700V 349A SP6C

Package: -

Stock12
MSCSM120TAM31T3AG
Microchip Technology

SIC 6N-CH 1200V 89A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO6604L_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 20V 6-TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.5A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Package: SC-74, SOT-457	Stock3,840	Logic Level Gate	20V	3.4A, 2.5A	60 mOhm @ 3.4A, 4.5V	1V @ 250µA	3.8nC @ 4.5V	320pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
FDS6898A_NF40	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,648	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM10DUM05TG	Microsemi Corporation	MOSFET 2N-CH 100V 278A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock7,296	Standard	100V	278A	5 mOhm @ 125A, 10V	4V @ 5mA	700nC @ 10V	20000pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FDW2501NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 5.5A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock1,439,760	Logic Level Gate	20V	5.5A	18 mOhm @ 5.5A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1286pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDM2509NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 8.7A 2X5MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x5)	Package: 6-WFDFN Exposed Pad	Stock104,400	Logic Level Gate	20V	8.7A	18 mOhm @ 8.7A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1200pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-MicroFET (2x5)
IPG20N06S2L50AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 51W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: 8-PowerVDFN	Stock7,376	Logic Level Gate	55V	20A	50 mOhm @ 15A, 10V	2V @ 19µA	17nC @ 10V	560pF @ 25V	51W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
ALD114904PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock3,984	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
PMDT290UCE,115	Nexperia USA Inc.	MOSFET N/P-CH 20V SOT666 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock162,720	Logic Level Gate	20V	800mA, 550mA	380 mOhm @ 500mA, 4.5V	950mV @ 250µA	0.68nC @ 4.5V	83pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
2N7002PV,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.35A SOT-666 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock2,192	Logic Level Gate	60V	350mA	1.6 Ohm @ 500mA, 10V	2.4V @ 250µA	0.8nC @ 4.5V	50pF @ 10V	330mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
QS8M51TR	Rohm Semiconductor	MOSFET N/P-CH 100V 2A/1.5A TSMT8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 325 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock2,352	Logic Level Gate	100V	2A, 1.5A	325 mOhm @ 2A, 10V	2.5V @ 1mA	4.7nC @ 5V	290pF @ 25V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
STS10DN3LH5	STMicroelectronics	MOSFET 2N-CH 30V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock71,088	Logic Level Gate	30V	10A	21 mOhm @ 5A, 10V	1V @ 250µA	4.6nC @ 5V	475pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDG6301N	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.22A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock5,998,320	Logic Level Gate	25V	220mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
AON7804_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9A/22A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 3.1W (Ta), 17W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	Package: -	Request a Quote	-	30V	9A (Ta), 22A (Tc)	21mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	3.1W (Ta), 17W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
EMH2603-TL-E	onsemi	PCH+NCH 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UHB50SC12E1BC3N	Qorvo	1200V/50A,SIC,HALF-BRIDGE,G3,E1B FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CMXDM7002A-BK-PBFREE	Central Semiconductor Corp	MOSFET 2N-CH 60V 0.28A SOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.592nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: -	Request a Quote	-	60V	280mA (Ta)	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.592nC @ 4.5V	50pF @ 25V	350mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
MSCSM120TLM08CAG	Microchip Technology	SIC 4N-CH 1200V 333A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Power - Max: 1378W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	Package: -	Stock15	-	1200V (1.2kV)	333A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 4mA	928nC @ 20V	12000pF @ 1000V	1378W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
CAB011M12FM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 105A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock15	-	1200V (1.2kV)	105A	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	10300pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM07CAG	Microchip Technology	SIC 4N-CH 700V 349A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 966W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	Package: -	Stock12	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
MSCSM120TAM31T3AG	Microchip Technology	SIC 6N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
UPA2350T1G-2-E4-A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA1874BGR-9JG-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 8A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 14mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: -	Request a Quote	Logic Level Gate	30V	8A	14mOhm @ 4A, 4.5V	1.5V @ 1mA	10nC @ 4V	930pF @ 10V	2W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMP22D5UDJ	Diodes Incorporated	MOSFET 2P-CH 20V 0.36A SOT963 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: -	Request a Quote	-	20V	360mA (Ta)	1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.3nC @ 4.5V	17pF @ 15V	380mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
AOC3860C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 25A 6ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-AlphaDFN (3.05x1.77)	Package: -	Stock23,970	-	12V	25A (Ta)	3.5mOhm @ 5A, 4.5V	1.1V @ 250µA	36nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-AlphaDFN (3.05x1.77)
SSF2116	Good-Ark Semiconductor	MOSFET N/P-CH 20V 3.8A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	Package: -	Stock32,760	-	20V	3.8A (Tc), 2.5A (Tc)	40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V	1V @ 250µA	10nC @ 4.5V	600pF @ 15V	1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
MSCSM170TAM45CT3AG	Microchip Technology	SIC 6N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SQJQ910EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 100V 70A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	Package: -	Stock5,970	-	100V	70A (Tc)	8.6mOhm @ 10A, 10V	2.5V @ 250µA	58nC @ 10V	2832pF @ 50V	187W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
DMG1029SVQ-7	Diodes Incorporated	MOSFET N/P-CH 60V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock9,000	-	60V	500mA (Ta), 360mA (Ta)	1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V	2.5V @ 250µA, 3V @ 250µA	0.3nC @ 4.5V, 0.28nC @ 4.5V	30pF @ 25V, 25pF @ 25V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563