Page 57 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AUIRF7343Q
Infineon Technologies

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

Package: 8-SOIC

Stock2,640
IRFI4019HG-117P
Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

Package: TO-220-5 Full Pack (Formed Leads)

Stock48,108
IRF7907PBF
Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock9,756
IRF9956PBF
Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,248
ECH8619-TL-E
ON Semiconductor

MOSFET N/P-CH 60V 3A/2A ECH8

Package: 8-SMD, Flat Lead

Stock14,196
XN0187200L
Panasonic Electronic Components

MOSFET 2N-CH 50V 0.1A MINI-5

Package: SC-74A, SOT-753

Stock2,144
SI4936ADY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,996
AON6924
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 15A/28A 8DFN

Package: 8-WDFN Exposed Pad

Stock5,552
EMH2314-TL-H
ON Semiconductor

MOSFET 2P-CH 12V 5A EMH8

Package: 8-SMD, Flat Lead

Stock2,656
SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

Package: 6-WDFN Exposed Pad

Stock7,536
SH8M13GZETB
Rohm Semiconductor

MIDDLE POWER MOSFET SERIES (DUAL

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,264
QH8KA4TCR
Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

Package: 8-SMD, Flat Lead

Stock7,888
BSL308CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 30V 2.3A/2A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock22,398
SH8M3TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock23,880
EPC2108ENGRT
EPC

TRANS GAN 3N-CH BUMPED DIE

Package: 9-VFBGA

Stock23,700
FDMA1029PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.1A MICROFET

Package: 6-VDFN Exposed Pad

Stock1,449,780
SI7234DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V 60A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock50,460
DMN5L06DWK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.305A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock1,195,140
FF4MR20KM1HHPSA1
Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

Package: -

Stock30
DMN3012LEG-7
Diodes Incorporated

MOSFET 2N-CH 30V 10A PWRDI3333

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7343Q	Infineon Technologies	MOSFET N/P-CH 55V 4.7/3.4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	Package: 8-SOIC	Stock2,640	Logic Level Gate	55V	4.7A, 3.4A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
IRFI4019HG-117P	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO-220FP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack (Formed Leads) Supplier Device Package: TO-220-5 Full-Pak	Package: TO-220-5 Full Pack (Formed Leads)	Stock48,108	Standard	150V	8.7A	95 mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack (Formed Leads)	TO-220-5 Full-Pak
IRF7907PBF	Infineon Technologies	MOSFET 2N-CH 30V 9.1A/11A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock9,756	Logic Level Gate	30V	9.1A, 11A	16.4 mOhm @ 9.1A, 10V	2.35V @ 25µA	10nC @ 4.5V	850pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9956PBF	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,248	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8619-TL-E	ON Semiconductor	MOSFET N/P-CH 60V 3A/2A ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock14,196	Logic Level Gate	60V	3A, 2A	93 mOhm @ 1.5A, 10V	-	12.8nC @ 10V	560pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
XN0187200L	Panasonic Electronic Components	MOSFET 2N-CH 50V 0.1A MINI-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: Mini5-G1	Package: SC-74A, SOT-753	Stock2,144	Standard	50V	100mA	50 Ohm @ 20mA, 5V	3.5V @ 100µA	-	15pF @ 5V	300mW	150°C (TJ)	Surface Mount	SC-74A, SOT-753	Mini5-G1
SI4936ADY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,996	Logic Level Gate	30V	4.4A	36 mOhm @ 5.9A, 10V	3V @ 250µA	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6924	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 15A/28A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 28A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Power - Max: 2W, 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (5x6)	Package: 8-WDFN Exposed Pad	Stock5,552	Logic Level Gate	30V	15A, 28A	5.2 mOhm @ 20A, 10V	2.3V @ 250µA	21nC @ 10V	1560pF @ 15V	2W, 2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (5x6)
EMH2314-TL-H	ON Semiconductor	MOSFET 2P-CH 12V 5A EMH8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 37 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 6V Power - Max: 1.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	Package: 8-SMD, Flat Lead	Stock2,656	Logic Level Gate	12V	5A	37 mOhm @ 2.5A, 4.5V	-	12nC @ 4.5V	1300pF @ 6V	1.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
SSM6N55NU,LF(T	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN(2x2)	Package: 6-WDFN Exposed Pad	Stock7,536	Logic Level Gate	30V	4A	46 mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN(2x2)
SH8M13GZETB	Rohm Semiconductor	MIDDLE POWER MOSFET SERIES (DUAL FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,264	-	30V	6A, 7A	29 mOhm @ 7A, 10V	2.5V @ 1mA	18nC @ 5V	1200pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QH8KA4TCR	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock7,888	-	30V	9A	17 mOhm @ 7A, 4.5V	1.5V @ 1mA	12nC @ 4.5V	1400pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
BSL308CH6327XTSA1	Infineon Technologies	MOSFET N/P-CH 30V 2.3A/2A 6TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock22,398	Logic Level Gate, 4.5V Drive	30V	2.3A, 2A	57 mOhm @ 2.3A, 10V	2V @ 11µA	1.5nC @ 10V	275pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
SH8M3TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A SOP8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock23,880	Logic Level Gate	30V	5A, 4.5A	51 mOhm @ 5A, 10V	2.5V @ 1mA	3.9nC @ 5V	230pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
EPC2108ENGRT	EPC	TRANS GAN 3N-CH BUMPED DIE FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	Package: 9-VFBGA	Stock23,700	GaNFET (Gallium Nitride)	60V, 100V	1.7A, 500mA	190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.22nC @ 5V, 0.044nC @ 5V	22pF @ 30V, 7pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
FDMA1029PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.1A MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	Package: 6-VDFN Exposed Pad	Stock1,449,780	Logic Level Gate	20V	3.1A	95 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	540pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
SI7234DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 60A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock50,460	Standard	12V	60A	3.4 mOhm @ 20A, 4.5V	1.5V @ 250µA	120nC @ 10V	5000pF @ 6V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMN5L06DWK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.305A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock1,195,140	Logic Level Gate	50V	305mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FF4MR20KM1HHPSA1	Infineon Technologies	SIC 2N-CH 2000V AG-62MMHB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	Package: -	Stock30	-	2000V (2kV)	280A (Tc)	5.3mOhm @ 300A, 18V	5.15V @ 168mA	1170nC @ 18V	36100pF @ 1.2kV	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-62MMHB
DMN3012LEG-7	Diodes Incorporated	MOSFET 2N-CH 30V 10A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Power - Max: 2.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	Package: -	Request a Quote	-	30V	10A (Ta), 20A (Tc)	12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V	2.1V @ 250µA, 1.15V @ 250µA	6.1nC @ 4.5V, 12.6nC @ 4.5V	850pF @ 15V, 1480pF @ 15V	2.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
2SD1936T-AC-SY	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJT138K-AU_R1_000A1	Panjit International Inc.	MOSFET 2N-CH 50V 0.36A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 236mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock18,375	-	50V	360mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1nC @ 4.5V	50pF @ 25V	236mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SP8K32TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	Logic Level Gate, 4V Drive	60V	4.5A (Ta)	65mOhm @ 4.5A, 10V	2.5V @ 1mA	10nC @ 5V	500pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NDH8521C	Fairchild Semiconductor	MOSFET N/P-CH 30V 3.8A SUPERSOT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSOP (0.130", 3.30mm Width) Supplier Device Package: SuperSOT™-8	Package: -	Request a Quote	-	30V	3.8A (Ta), 2.7A (Ta)	33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V	2V @ 250µA	25nC @ 10V, 27nC @ 10V	500pF @ 15V, 560pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSOP (0.130", 3.30mm Width)	SuperSOT™-8
MCB30P1200LB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	Package: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
SIX3439KA-TPQ2	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	20V	750mA, 600mA	300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V	1.1V @ 250µA	0.8nC @ 4.5V, 0.86nC @ 4.5V	33pF @ 16V, 40pF @ 16V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTTFS5C471NLTAG	onsemi	MOSFET 40V U8FL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA1764G-E1-A	Renesas Electronics Corporation	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-