Page 60 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7331TR
Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock540,000
AO8801AL
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,152
LP1030DK1-G
Microchip Technology

MOSFET 2P-CH 300V SOT23-5

Package: SC-74A, SOT-753

Stock4,128
AO5803E
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 0.6A SC89-6L

Package: SOT-563, SOT-666

Stock24,000
ECH8653-TL-H
ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

Package: 8-SMD, Flat Lead

Stock22,800
SI4567DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,664
DMC1229UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V U-DFN2020-6

Package: 6-UDFN Exposed Pad

Stock4,080
EPC2102ENGRT
EPC

MOSFET ARRAY 2N-CH 60V DIE

Package: Die

Stock6,752
IRF7343TRPBF
Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,019,832
IRF7331TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock556,428
SP8M51TB1
Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,227,840
DMG8822UTS-13
Diodes Incorporated

MOSFET 2N-CH 20V 4.9A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock19,836
AO4807
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,407,248
SI3590DV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock187,140
BSS84DW-7-F
Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock6,340,884
DI028N10PQ2-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote
BUK9MTT-65PBB-518
Nexperia USA Inc.

MOSFET 2N-CH 65V 3.8A 20SO

Package: -

Request a Quote
FDMC0222
Fairchild Semiconductor

MOSFET N-CH

Package: -

Request a Quote
IRF7303QTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8-SOIC

Package: -

Request a Quote
SQ9945BEY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 60V 5.4A 8SOIC

Package: -

Stock5,925

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7331TR	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock540,000	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO8801AL	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,152	Logic Level Gate	20V	4.5A	42 mOhm @ 4.5A, 4.5V	900mV @ 250µA	11nC @ 4.5V	905pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
LP1030DK1-G	Microchip Technology	MOSFET 2P-CH 300V SOT23-5 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V Power - Max: - Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-23-5	Package: SC-74A, SOT-753	Stock4,128	Standard	300V	-	180 Ohm @ 20mA, 7V	2.4V @ 1mA	-	10.8pF @ 25V	-	-25°C ~ 125°C (TJ)	Surface Mount	SC-74A, SOT-753	SOT-23-5
AO5803E	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 0.6A SC89-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 800 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 400mW Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock24,000	Logic Level Gate	20V	-	800 mOhm @ 600mA, 4.5V	900mV @ 250µA	-	100pF @ 10V	400mW	-50°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
ECH8653-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 7.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock22,800	Logic Level Gate	20V	7.5A	20 mOhm @ 4A, 8V	-	18.5nC @ 8V	1280pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI4567DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 5A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V Power - Max: 2.75W, 2.95W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,664	Standard	40V	5A, 4.4A	60 mOhm @ 4.1A, 10V	2.2V @ 250µA	12nC @ 10V	355pF @ 20V	2.75W, 2.95W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC1229UFDB-13	Diodes Incorporated	MOSFET N/P-CH 12V U-DFN2020-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock4,080	Logic Level Gate	12V	5.6A, 3.8A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
EPC2102ENGRT	EPC	MOSFET ARRAY 2N-CH 60V DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tj) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock6,752	GaNFET (Gallium Nitride)	60V	23A (Tj)	4.4 mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRF7343TRPBF	Infineon Technologies	MOSFET N/P-CH 55V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,019,832	Standard	55V	4.7A, 3.4A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7331TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock556,428	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SP8M51TB1	Rohm Semiconductor	MOSFET N/P-CH 100V 3A/2.5A SOP8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,227,840	Standard	100V	3A, 2.5A	-	-	-	-	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMG8822UTS-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.9A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 10V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock19,836	Logic Level Gate	20V	4.9A	25 mOhm @ 8.2A, 4.5V	900mV @ 250µA	9.6nC @ 4.5V	841pF @ 10V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AO4807	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,407,248	Logic Level Gate	30V	6A	35 mOhm @ 6A, 10V	2.4V @ 250µA	16nC @ 10V	760pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3590DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock187,140	Logic Level Gate	30V	2.5A, 1.7A	77 mOhm @ 3A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
BSS84DW-7-F	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,340,884	Logic Level Gate	50V	130mA	10 Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DI028N10PQ2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Power - Max: 32.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	Package: -	Request a Quote	-	100V	28A (Tc)	21mOhm @ 7A, 10V	2.5V @ 250µA	22nC @ 10V	1028pF @ 50V	32.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4
BUK9MTT-65PBB-518	Nexperia USA Inc.	MOSFET 2N-CH 65V 3.8A 20SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 90.4mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Power - Max: 3.15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	Package: -	Request a Quote	Logic Level Gate	65V	3.8A (Tc)	90.4mOhm @ 3A, 10V	2V @ 1mA	6.3nC @ 5V	535pF @ 25V	3.15W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
FDMC0222	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRF7303QTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 4.9A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	30V	4.9A	50mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQ9945BEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.4A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock5,925	-	60V	5.4A (Tc)	64mOhm @ 3.4A, 10V	2.5V @ 250µA	12nC @ 10V	470pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMP2108UCB6-7	Diodes Incorporated	MOSFET 2P-CH 20V 2.25A 6UWLB FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.25A Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V Power - Max: 840mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLBGA Supplier Device Package: U-WLB1510-6	Package: -	Request a Quote	-	20V	2.25A	55mOhm @ 1A, 4.5V	1.1V @ 250µA	2.1nC @ 4.5V	269pF @ 10V	840mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, WLBGA	U-WLB1510-6
CPH6601-TL-E	onsemi	PCH+PCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FDW2515NZ	Fairchild Semiconductor	MOSFET 2N-CH 20V 5.8A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: -	Request a Quote	-	20V	5.8A (Ta)	28mOhm @ 5.8A, 4.5V	1.5V @ 250µA	12nC @ 5V	745pF @ 10V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SH8KB7TB1	Rohm Semiconductor	MOSFET 2N-CH 40V 13.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock22,371	-	40V	13.5A (Ta)	8.4mOhm @ 13.5A, 10V	2.5V @ 1mA	27nC @ 10V	1570pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA1890GR-9JG-E1-A	Renesas Electronics Corporation	MOSFET N/P-CH 30V 6A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	Package: -	Request a Quote	Logic Level Gate	30V	6A, 5A	27mOhm @ 3A, 10V	2.5V @ 1mA	14nC @ 10V	748pF @ 10V	2W	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
SCH2830-S-TL-E	onsemi	PCH+SBD 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMNH4006SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2991UDA-7B	Diodes Incorporated	MOSFET 2N-CH 20V 0.45A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V Power - Max: 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	Package: -	Stock168,192	-	20V	450mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V	21.5pF @ 16V	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6