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Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
- Power - Max: 30W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: 8-PowerVDFN |
Stock37,920 |
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Logic Level Gate | 55V | 20A | 35 mOhm @ 11A, 10V | 2.2V @ 15µA | 23nC @ 10V | 1730pF @ 25V | 30W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Vishay Siliconix |
MOSFET 2N-CH 8V 4A 1206-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
- Power - Max: 3.12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock358,272 |
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Logic Level Gate | 8V | 4A | 32 mOhm @ 6.8A, 4.5V | 1V @ 250µA | 12nC @ 5V | 680pF @ 4V | 3.12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Vishay Siliconix |
MOSFET 2N-CH 20V 3.3A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock8,868 |
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Logic Level Gate | 20V | 3.3A | 45 mOhm @ 3.9A, 4.5V | 1.8V @ 250µA | 6nC @ 4.5V | - | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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ON Semiconductor |
MOSFET 2N-CH 20V 0.63A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
- Power - Max: 270mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock5,200 |
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Logic Level Gate | 20V | 630mA | 375 mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Microsemi Corporation |
MOSFET 2N-CH 100V 70A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock3,232 |
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Standard | 100V | 70A | 21 mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,224 |
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Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET N/P-CH 60V 3A/2.5A VEC8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SOT-28FL/VEC8
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Package: 8-SMD, Flat Lead |
Stock2,016 |
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Logic Level Gate, 4V Drive | 60V | 3A, 2.5A | 80 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 10nC @ 10V | 505pF @ 20V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | SOT-28FL/VEC8 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 100V 4A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock41,040 |
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Standard | 100V | 4A | 68 mOhm @ 4A, 10V | 2.8V @ 250µA | 12nC @ 10V | 415pF @ 50V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET N/P-CH 25V/12V TSOT26
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V, 12V
- Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,672 |
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Standard | 25V, 12V | 500mA, 3.9A | 4 Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.9nC @ 10V | 27.6pF @ 10V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Advanced Linear Devices Inc. |
QUAD P-CHANNEL EPAD MATCHED PAIR
- FET Type: 4 P-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock4,288 |
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Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A, 12A
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock543,600 |
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Logic Level Gate | 20V | 10A, 12A | 9.3 mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2P-CH 50V 0.16A SOT563
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 160mA
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V
- Power - Max: 400mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock45,492 |
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Logic Level Gate | 50V | 160mA | 6 Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | 50.54pF @ 25V | 400mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 0.455A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X2-DFN0806-6
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Package: - |
Request a Quote |
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- | 20V | 455mA (Ta) | 990mOhm @ 100mA, 4.5V | 1V @ 250µA | 0.41nC @ 4.5V | 31pF @ 15V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | X2-DFN0806-6 |
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YAGEO XSEMI |
MOSFET N/P-CH 100V 2.5A 8SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V, 51.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V, 3040pF @ 50V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: - |
Stock3,000 |
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- | 100V | 2.5A (Ta) | 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V | 3V @ 250µA | 17.6nC @ 10V, 51.2nC @ 10V | 960pF @ 50V, 3040pF @ 50V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock22,446 |
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- | 40V | 6A (Ta) | 38mOhm @ 6A, 10V | 2.5V @ 1mA | 2.9nC @ 5V | 280pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Fairchild Semiconductor |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V V-DFN3030-8
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 22A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
- Power - Max: 38W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Stock7,653 |
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Logic Level Gate | 60V | 22A (Ta) | 32mOhm @ 5A, 10V | 2.1V @ 1mA | 7.8nC @ 5V | 1081pF @ 25V | 38W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Vishay Siliconix |
MOSFET 2P-CH 30V 3A 6TSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
- Power - Max: 1.67W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: - |
Stock22,176 |
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- | 30V | 3A (Tc) | 133mOhm @ 1.5A, 10V | 2.5V @ 250µA | 12.2nC @ 10V | 570pF @ 15V | 1.67W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Panjit International Inc. |
MOSFET 2N-CH 30V 0.3A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
- Power - Max: 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock7,338 |
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- | 30V | 300mA (Ta) | 1.2Ohm @ 300mA, 4.5V | 1V @ 250µA | 0.9nC @ 4.5V | 45pF @ 10V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 2N-CH 40V 8.5A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
- Power - Max: 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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Package: - |
Request a Quote |
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- | 40V | 8.5A (Ta), 26.5A (Tc) | 19mOhm @ 20A, 10V | 3V @ 250µA | 11.2nC @ 10V | 750pF @ 20V | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXC) |
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Microchip Technology |
SIC 2N-CH 700V 1021A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 1021A (Tc)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 36mA
- Gate Charge (Qg) (Max) @ Vgs: 1935nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 40500pF @ 700V
- Power - Max: 2750W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 1021A (Tc) | 2.1mOhm @ 360A, 20V | 2.4V @ 36mA | 1935nC @ 20V | 40500pF @ 700V | 2750W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Renesas Electronics Corporation |
MOSFET 2P-CH 50V 0.1A SC59-5
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
- Power - Max: 300mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SC-59-5, Mini Mold
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Package: - |
Request a Quote |
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- | 50V | 100mA | 60Ohm @ 10mA, 10V | 2.5V @ 1µA | - | 17pF @ 5V | 300mW | - | Surface Mount | SC-74A, SOT-753 | SC-59-5, Mini Mold |
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Wolfspeed, Inc. |
SIC 4N-CH 1200V 105A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 35mA
- Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 105A (Tj) | 14mOhm @ 100A, 15V | 3.6V @ 35mA | 324nC @ 15V | 10300pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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IXYS |
MOSFET 6N-CH 100V 120A ISOPLUS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL™
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Package: - |
Request a Quote |
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- | 100V | 120A (Tc) | 4mOhm @ 80A, 10V | 3.5V @ 150µA | 88nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL™ |
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Micro Commercial Co |
MOSFET 2N-CH 30V 8.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock11,022 |
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- | 30V | 8.5A | 23mOhm @ 8.5A, 10V | 2.2V @ 250µA | 5.2nC @ 4.5V | 490pF @ 15V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Wolfspeed, Inc. |
SIC 2N-CH 1700V 653A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 203mA
- Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 653A (Tc) | 2.6mOhm @ 500A, 15V | 3.6V @ 203mA | 1992nC @ 15V | 64900pF @ 1200V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
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onsemi |
NCH+SBD 2.5V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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