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Infineon Technologies |
MOSFET 2N-CH 30V 9.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.7A
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock10,800 |
|
Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A, 10V | 2.35V @ 25µA | 90nC @ 4.5V | 760pF @ 15V | 2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 8MLP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock90,852 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
|
Package: 8-SOIC |
Stock5,072 |
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Standard | 30V | 8A | 20.5 mOhm @ 8A, 10V | 2.4V @ 250µA | 18nC @ 10V | 865pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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ON Semiconductor |
MOSFET 2P-CH 12V 6A ECH8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
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Package: 8-SMD, Flat Lead |
Stock16,800 |
|
Logic Level Gate | 12V | 6A | 28 mOhm @ 3A, 4.5V | - | 11nC @ 4.5V | 1000pF @ 6V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 60V 6.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock295,380 |
|
Logic Level Gate | 60V | - | 25 mOhm @ 6.3A, 10V | 3V @ 250µA | 58nC @ 10V | 2300pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
MOSFET N/P-CH 20V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock91,320 |
|
Logic Level Gate | 20V | 5.2A, 4.3A | 50 mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
|
Package: 16-DIP (0.300", 7.62mm) |
Stock6,816 |
|
Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Vishay Siliconix |
MOSFET 2N-CH 30V 24A 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
- Power - Max: 23W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
|
Package: PowerPAK? 1212-8 Dual |
Stock8,700 |
|
Standard | 30V | 24A | 25 mOhm @ 8A, 10V | 3V @ 250µA | 17nC @ 10V | 700pF @ 15V | 23W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
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ON Semiconductor |
MOSFET 2N-CH 12V 27A EFCP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-CSP (1.77x3.54)
|
Package: 6-SMD, No Lead |
Stock6,144 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | 6-SMD, No Lead | 6-CSP (1.77x3.54) |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI506
- FET Type: 2 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
|
Package: 8-PowerTDFN |
Stock2,128 |
|
Standard | - | 26A (Tc) | 48 mOhm @ 5A, 10V | 3V @ 250µA | 14.5nC @ 4.5V | 1525pF @ 30V | - | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
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ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SC-88
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
- Power - Max: 272mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock84,000 |
|
Standard | 30V | 250mA | 1.5 Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | 33pF @ 5V | 272mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 4.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock180,780 |
|
Logic Level Gate | 60V | 4.3A | 40 mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | 1407pF @ 40V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.3A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock397,068 |
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Logic Level Gate | 20V | 6.3A | 19 mOhm @ 8.4A, 10V | 3V @ 250µA | 25nC @ 5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 60V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock276,780 |
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Logic Level Gate | 60V | - | 25 mOhm @ 6.3A, 10V | 3V @ 250µA | 58nC @ 10V | 2300pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.18A/0.1A ES6
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
|
Package: SOT-563, SOT-666 |
Stock3,408 |
|
Standard | 20V | 100mA | 3 Ohm @ 10mA, 4V | 1.1V @ 0.1mA | - | 9.3pF @ 3V | 150mW | 150°C (TA) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Vishay Siliconix |
MOSFET 2N-CH 20V 20A/60A PPAK SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 20A, 60A
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric
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Package: PowerPAK? SO-8 Dual |
Stock28,530 |
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Standard | 20V | 20A, 60A | 8.8 mOhm @ 16A, 10V | 2V @ 250µA | 18nC @ 10V | 975pF @ 10V | 27W, 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual Asymmetric |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 15A/26A POWER56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 15A, 26A
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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Package: 8-PowerTDFN |
Stock68,280 |
|
Logic Level Gate | 25V | 15A, 26A | 5.6 mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 10V | 1680pF @ 13V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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ON Semiconductor |
MOSFET 2P-CH 30V 2.34A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.34A
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
- Power - Max: 730mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock638,328 |
|
Logic Level Gate | 30V | 2.34A | 85 mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | 730mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
- Power - Max: 710mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFN (2x2)
|
Package: 6-WDFN Exposed Pad |
Stock7,792 |
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Logic Level Gate | 20V | 2.6A, 2.3A | 65 mOhm @ 3.8A, 4.5V | 1V @ 250µA | 3.7nC @ 4.5V | 271pF @ 10V | 710mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) |
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Vishay Siliconix |
MOSFET N/P-CH 30V SOT363
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
- Rds On (Max) @ Id, Vgs: 388 mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
- Power - Max: 340mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock621,324 |
|
Logic Level Gate | 30V | 700mA, 500mA | 388 mOhm @ 600mA, 10V | 2.5V @ 250µA | 1.5nC @ 10V | 28pF @ 15V | 340mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
MOSFET N/P-CH 30V 3.4A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
- Power - Max: 880mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
|
Package: - |
Stock5,373 |
|
- | 30V | 3.4A (Ta), 2.7A (Ta) | 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V | 1.8V @ 250µA, 2.2V @ 250µA | 6.6nC @ 10V, 6.8nC @ 10V | 278pF @ 15V, 287pF @ 15V | 880mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET 2N-CH 40V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 27W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
|
Package: - |
Stock7,065 |
|
- | 40V | 30A (Tc) | 7.3mOhm @ 7A, 10V | 2.5V @ 250µA | 36nC @ 10V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Good-Ark Semiconductor |
MOSFET 2N-CH 30V 60A 8PPAK
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V
- Power - Max: 52W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PPAK (5x5.8)
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Package: - |
Stock14,919 |
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- | 30V | 60A (Tc) | 7mOhm @ 30A, 10V | 2.5V @ 250µA | 23.5nC @ 10V | 1335pF @ 15V | 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PPAK (5x5.8) |
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onsemi |
APM17-MDA, MV7 80V, ALN, 2 PHASE
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 765µOhm @ 160A, 12V, 710µOhm @ 160A, 12V
- Vgs(th) (Max) @ Id: 4.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
- Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
- Power - Max: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 17-PowerDIP Module (1.778", 45.15mm)
- Supplier Device Package: APM17-MDA
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Package: - |
Request a Quote |
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- | 80V | - | 765µOhm @ 160A, 12V, 710µOhm @ 160A, 12V | 4.6V @ 1mA | 502nC @ 12V | 30150pF @ 40V | - | 175°C (TJ) | Through Hole | 17-PowerDIP Module (1.778", 45.15mm) | APM17-MDA |
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Wolfspeed, Inc. |
SIC 2N-CH 1200V 417A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 85mA
- Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 417A (Tc) | 5.2mOhm @ 350A, 15V | 3.6V @ 85mA | 844nC @ 15V | 25700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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Goford Semiconductor |
MOSFET 2N-CH 40V 62A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V
- Power - Max: 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
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Package: - |
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- | 40V | 62A (Tc) | 6.5mOhm @ 30A, 10V | 2.3V @ 250µA | 44nC @ 10V | 1276pF @ 20V | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (4.9x5.75) |
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Microchip Technology |
MOSFET 600V 40A SP6-P
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P
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Package: - |
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- | 600V | 40A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | SP6-P |