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IXYS |
MOSFET 6N-CH 100V 90A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Gull Wing |
Stock5,568 |
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Standard | 100V | 90A | 8.5 mOhm @ 80A, 10V | 4.5V @ 250µA | 90nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL? |
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Microsemi Corporation |
MOSFET 6N-CH 100V 70A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock7,216 |
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Standard | 100V | 70A | 21 mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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IXYS |
MOSFET 2N-CH 75V 1500A Y3-LI
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 1500A
- Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 1200A, 10V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 2480nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
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Package: Y3-Li |
Stock7,904 |
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Standard | 75V | 1500A | 0.8 mOhm @ 1200A, 10V | 4V @ 10mA | 2480nC @ 10V | - | - | -40°C ~ 175°C (TJ) | Chassis Mount | Y3-Li | Y3-Li |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,170,456 |
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Logic Level Gate | 30V | 5.3A | 35 mOhm @ 5.3A, 10V | 2.8V @ 250µA | 30nC @ 10V | 720pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 500V 180A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,232 |
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Standard | 500V | 180A | 20 mOhm @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | 28000pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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IXYS |
MOSFET 6N-CH 75V 270A V2-PAK
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 270A
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
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Package: V2-PAK |
Stock4,640 |
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Standard | 75V | 270A | 2.1 mOhm @ 100A, 10V | 4V @ 500µA | 360nC @ 10V | - | - | -40°C ~ 175°C (TJ) | Chassis Mount | V2-PAK | V2-PAK |
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Rohm Semiconductor |
MOSFET N/P-CH 250V 3A/2.5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
- Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Power - Max: 650mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock393,492 |
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Standard | 250V | 3A, 2.5A | 1.63 Ohm @ 1.5A, 10V | 4V @ 1mA | 5.2nC @ 10V | 180pF @ 25V | 650mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Depletion Mode
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
- Vgs(th) (Max) @ Id: 380mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock5,920 |
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Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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STMicroelectronics |
DUAL N-CHANNEL 60 V 0.023 OHM TY
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
- Power - Max: 58W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat? (5x6)
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Package: 8-PowerVDFN |
Stock3,936 |
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Standard | 60V | 33A (Tc) | 27 mOhm @ 4.5A, 10V | 4V @ 250µA | 8nC @ 10V | 420pF @ 30V | 58W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat? (5x6) |
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Texas Instruments |
MOSFET 2P-CH 3.9A 9DSBGA
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 3.9A
- Rds On (Max) @ Id, Vgs: 162 mOhm @ 1A, 1.8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-UFBGA, DSBGA
- Supplier Device Package: 9-DSBGA
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Package: 9-UFBGA, DSBGA |
Stock5,072 |
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Logic Level Gate | - | 3.9A | 162 mOhm @ 1A, 1.8V | 1.1V @ 250µA | 3.7nC @ 4.5V | 595pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA |
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ON Semiconductor |
MOSFET N/P-CH 20V 4A/3.1A 1206A
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock1,189,320 |
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Logic Level Gate | 20V | 4A, 3.1A | 45 mOhm @ 4.4A, 4.5V | 1.2V @ 250µA | 7.9nC @ 4.5V | 510pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V 6-MICROFET
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
- Power - Max: 600mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (1.6x1.6)
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Package: 6-UFDFN Exposed Pad |
Stock26,328 |
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Logic Level Gate | 20V | 3.8A, 2.6A | 66 mOhm @ 3.4A, 4.5V | 1V @ 250µA | 4.2nC @ 4.5V | 300pF @ 10V | 600mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) |
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Renesas |
MOSFET 2N-CH 24V 6A 4EFLIP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 4-UFLGA
- Supplier Device Package: 4-EFLIP (1.62x1.62)
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Package: - |
Request a Quote |
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- | 24V | 6A | - | - | - | - | - | - | Surface Mount | 4-UFLGA | 4-EFLIP (1.62x1.62) |
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Vishay Siliconix |
MOSFET N/P-CH 20V 5.7A 8TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
- Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: - |
Stock9,714 |
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- | 20V | 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) | 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V | 1.5V @ 250µA | 23nC @ 10V, 51nC @ 10V | 850pF @ 10V, 1200pF @ 10V | 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Nexperia USA Inc. |
MOSFET N/P-CH 20V 0.8A SOT666
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, 1.14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, 87pF @ 10V
- Power - Max: 330mW (Ta), 1.09W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: - |
Request a Quote |
|
- | 20V | 800mA (Ta), 550mA (Ta) | 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V | 950mV @ 250µA, 1.3V @ 250µA | 0.68nC @ 4.5V, 1.14nC @ 4.5V | 83pF @ 10V, 87pF @ 10V | 330mW (Ta), 1.09W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 0.25A ES6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
- Power - Max: 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock23,136 |
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Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 25V 17A/60A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc), 34A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 12.5V, 3215pF @ 12.5V
- Power - Max: 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
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Package: - |
Request a Quote |
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- | 25V | 17A (Ta), 60A (Tc), 34A (Ta), 60A (Tc) | 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V | 1.8V @ 250µA | 21nC @ 10V, 80nC @ 10V | 880pF @ 12.5V, 3215pF @ 12.5V | 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN-EP (3.3x3.3) |
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Micro Commercial Co |
MOSFET 2N-CH 60V 0.22A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
- Power - Max: 240mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock18,000 |
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Logic Level Gate | 60V | 220mA (Ta) | 2.5Ohm @ 300mA, 10V | 2.4V @ 250µA | 1.75nC @ 10V | 25pF @ 25V | 240mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 1.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
|
Package: - |
Stock26,805 |
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Logic Level Gate, 1.8V Drive | 20V | 1.5A (Ta) | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Vishay Siliconix |
MOSFET 2N-CH 70V 11.7A 8PWRPAIR
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 70V
- Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
- Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
- Power - Max: 4.3W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (3.3x3.3)
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Package: - |
Stock2,700 |
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- | 70V | 11.7A (Ta), 32.5A (Tc) | 16.1mOhm @ 10A, 10V | 2.4V @ 250µA | 20nC @ 10V | 795pF @ 35V, 765pF @ 35V | 4.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) |
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Renesas Electronics Corporation |
POWER TRS2 LIB 8P HVSON ANL4 OTH
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSON (5x6)
|
Package: - |
Request a Quote |
|
- | - | 35A (Ta) | 1.5mOhm @ 18A, 10V | 4V @ 1mA | - | - | - | 150°C | Surface Mount | 8-PowerTDFN | 8-HSON (5x6) |
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Diodes Incorporated |
MOSFET N/P-CH 30V 4.6A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
Stock59,607 |
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- | 30V | 4.6A (Ta), 3.3A (Ta) | 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V | 2.5V @ 250µA | 4.5nC @ 10V, 6.5nC @ 10V | 190pF @ 15V, 254pF @ 15V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Diodes Incorporated |
MOSFET 2N-CH X4-DSN3118-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X4-DSN3118-6
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Package: - |
Request a Quote |
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- | - | - | - | - | 68.6nC @ 4V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | X4-DSN3118-6 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 11.3A/34A PPAK
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
- Power - Max: 2.6W (Ta), 23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8
- Supplier Device Package: PowerPAK® 1212-8
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Package: - |
Request a Quote |
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- | 40V | 11.3A (Ta), 34A (Tc) | 12mOhm @ 10A, 10V | 2.3V @ 250µA | 16nC @ 10V | 720pF @ 20V | 2.6W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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onsemi |
MOSFET 2N-CH 25V 14A/75A 8PQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
- Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PQFN (5x6)
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Package: - |
Stock9,000 |
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- | 25V | 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc) | 3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V | 2.1V @ 240µA, 2.1V @ 850µA | 15nC @ 10V, 59nC @ 10V | 1080pF @ 12V, 4265pF @ 12V | 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PQFN (5x6) |
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Microchip Technology |
SIC 4N-CH 700V 464A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
- Power - Max: 1.277kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 464A (Tc) | 4.8mOhm @ 160A, 20V | 2.4V @ 16mA | 860nC @ 20V | 18000pF @ 700V | 1.277kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 264A SP6C LI
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 264A (Tc)
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 4V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V
- Power - Max: 1350W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 264A (Tc) | 8.7mOhm @ 240A, 20V | 4V @ 60mA | 690nC @ 20V | 11400pF @ 1000V | 1350W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C LI |
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onsemi |
MOSFET N/P-CH 60V 3A/2.5A SOT28
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
- Power - Max: 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SOT-28FL/VEC8
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Package: - |
Request a Quote |
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- | 60V | 3A (Ta), 2.5A (Ta) | 80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V | 2.6V @ 1mA | 10nC @ 10V, 11nC @ 10V | 505pF @ 20V | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | SOT-28FL/VEC8 |