|
|
ON Semiconductor |
MOSFET 2N-CH
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
|
Package: 8-SMD, Flat Lead |
Stock7,936 |
|
Logic Level Gate, 2.5V Drive | 24V | 8A (Ta) | 23 mOhm @ 4A, 4.5V | 1.3V @ 1mA | 7.5nC @ 4.5V | - | - | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
Microsemi Corporation |
MOSFET 4N-CH 800V 15A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
- Power - Max: 156W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock6,816 |
|
Standard | 800V | 15A | 290 mOhm @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Vishay Siliconix |
MOSFET 2P-CH 30V 7A PPAK SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
|
Package: PowerPAK? SO-8 Dual |
Stock45,480 |
|
Logic Level Gate | 30V | 7A | 20 mOhm @ 10.9A, 10V | 3V @ 250µA | 74nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 1A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 570mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock300,924 |
|
Logic Level Gate | 12V | 1A | 370 mOhm @ 1A, 4.5V | 450mV @ 100µA (Min) | 2nC @ 4.5V | - | 570mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 0.5A SC70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 500mA
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock50,400 |
|
Logic Level Gate | 25V | 500mA | 450 mOhm @ 500mA, 4.5V | 1.5V @ 250µA | 2.3nC @ 4.5V | 50pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI333
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
- Power - Max: 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8
|
Package: 8-PowerVDFN |
Stock6,128 |
|
Standard | 30V | 7.2A (Ta), 6.8A (Ta) | 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V | 2V @ 250µA | 4.6nC @ 4.5V, 9.5nC @ 4.5V | 500pF @ 15V, 1188pF @ 15V | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 |
|
|
ON Semiconductor |
MOSFET 2N-CH 20V 0.63A SC88
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
- Power - Max: 270mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,416 |
|
Logic Level Gate | 20V | 630mA | 375 mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
STMicroelectronics |
MOSFET 2P-CH 30V 4A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock351,516 |
|
Standard | 30V | 4A | 80 mOhm @ 2A, 10V | 1V @ 250µA | 16nC @ 5V | 1350pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
TSC America Inc. |
MOSFET, DUAL, P-CHANNEL, -30V, -
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock11,316 |
|
Standard | 30V | 7.1A (Ta) | 25 mOhm @ 7.1A, 10V | 3V @ 250µA | 33nC @ 10V | 1900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: 25 Ohm
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock5,280 |
|
Logic Level Gate | 10.6V | 80mA | 25 Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 19A/26A DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 19A, 26A
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-DFN-EP (5x6)
|
Package: 8-PowerWDFN |
Stock3,680 |
|
Standard | 30V | 19A, 26A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | 820pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN-EP (5x6) |
|
|
Panasonic Electronic Components |
MOSFET N/P-CH 50V/30V SSMINI-6P
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V, 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 125mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SSMINI6-F1
|
Package: SOT-563, SOT-666 |
Stock98,508 |
|
Logic Level Gate | 50V, 30V | 100mA | 12 Ohm @ 10mA, 4V | 1.5V @ 1µA | - | - | 125mW | 125°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSMINI6-F1 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH MLP2X3
- FET Type: 2 P-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-MLP (2x3)
|
Package: 6-WDFN Exposed Pad |
Stock44,232 |
|
Logic Level Gate | - | - | 36 mOhm @ 5.7A, 4.5V | 1.5V @ 250µA | 30nC @ 10V | 3030pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MLP (2x3) |
|
|
Diodes Incorporated |
MOSFET N/P-CH 30V TSOT23-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 840mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock100,080 |
|
Logic Level Gate | 30V | 3.4A, 2.8A | 60 mOhm @ 3.1A, 10V | 2.3V @ 250µA | 13nC @ 10V | 400pF @ 15V | 840mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-23-6 |
|
|
Microchip Technology |
SIC 6N-CH 1200V 171A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 728W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 171A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 728W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
|
|
Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 85A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V
- Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-DFN (5x6)
|
Package: - |
Request a Quote |
|
- | 30V | 50A (Tc), 85A (Tc) | 5.2mOhm @ 20A, 10V | 2.2V @ 250µA | 12.8nC @ 10V | 810pF @ 15V | 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN (5x6) |
|
|
Infineon Technologies |
MOSFET 2N-CH 150V 8.7A TO220-5
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
- Power - Max: 18W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5 Full Pack, Formed Leads
- Supplier Device Package: TO-220-5 Full-Pak
|
Package: - |
Stock2,523 |
|
- | 150V | 8.7A (Tc) | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack, Formed Leads | TO-220-5 Full-Pak |
|
|
Qorvo |
1200V/15A,SIC,FULL-BRIDGE,G3,E1B
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Nexperia USA Inc. |
MOSFET 2N-CH 80V 21A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 64W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
|
Package: - |
Request a Quote |
|
- | 80V | 21A (Ta) | - | 4V @ 1mA | - | - | 64W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
|
|
Infineon Technologies |
SIC 6N-CH 1200V AG-HYBRIDD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 240mA
- Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-HYBRIDD-2 |
|
|
IXYS |
MOSFET 6N-CH 100V 190A ISOPLUS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: ISOPLUS-DIL™
- Supplier Device Package: ISOPLUS-DIL™
|
Package: - |
Request a Quote |
|
- | 100V | 190A (Tc) | 2.2mOhm @ 100A, 10V | 3.5V @ 275µA | 155nC @ 10V | 11100pF @ 50V | - | -55°C ~ 175°C (TJ) | Surface Mount | ISOPLUS-DIL™ | ISOPLUS-DIL™ |
|
|
Diodes Incorporated |
MOSFET 2N-CH 50V 0.28A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
- | 50V | 280mA (Ta) | 2Ohm @ 50mA, 5V | 1.2V @ 250µA | - | 50pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Infineon Technologies |
SIC 1200V AG-EASY1B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
|
Package: - |
Stock57 |
|
- | 1200V (1.2kV) | - | - | - | - | - | - | - | Chassis Mount | Module | AG-EASY1B |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 4A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-µDFN (2x2)
|
Package: - |
Stock3,981 |
|
Logic Level Gate, 1.8V Drive | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | 2W (Ta) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-µDFN (2x2) |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 3.4A 6TSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: - |
Request a Quote |
|
- | 30V | 3.4A (Ta) | 60mOhm @ 3.4A, 10V | 1.5V @ 250µA | 10nC @ 10V | 235pF @ 15V | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Nexperia USA Inc. |
MOSFET N/P-CH 50V 0.33A SOT666
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 170mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 36pF @ 25V
- Power - Max: 330mW (Ta), 1.09W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: - |
Request a Quote |
|
Logic Level Gate | 50V | 330mA (Ta), 170mA (Ta) | 1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V, 0.35nC @ 5V | 50pF @ 10V, 36pF @ 25V | 330mW (Ta), 1.09W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 24V 30A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-XFDFN
- Supplier Device Package: 10-AlphaDFN (3.2x2.1)
|
Package: - |
Stock26,280 |
|
- | 24V | 30A (Ta) | 3.1mOhm @ 5A, 4.5V | 1.2V @ 250µA | 35nC @ 4.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 10-XFDFN | 10-AlphaDFN (3.2x2.1) |