Page 87 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF5810TR
Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,328
SQJ962EP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 8A 8SO

Package: PowerPAK? SO-8 Dual

Stock32,892
SI5903DC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 1206-8

Package: 8-SMD, Flat Lead

Stock5,504
GWM160-0055X1-SL
IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

Package: 17-SMD, Flat Leads

Stock4,432
SI6928DQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock3,984
SI1033X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SOT563F

Package: SOT-563, SOT-666

Stock324,000
FDR8305N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A SSOT-8

Package: 8-SMD, Gull Wing

Stock3,216
APTC60DSKM45T1G
Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

Package: SP1

Stock3,072
DMP3056LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock634,416
ECH8657-TL-H
ON Semiconductor

MOSFET 2N-CH 35V 4.5A ECH8

Package: 8-SMD, Flat Lead

Stock36,000
QS8M11TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A TSMT8

Package: 8-SMD, Flat Lead

Stock2,896
AO4803A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock895,164
NTJD4158CT1G
ON Semiconductor

MOSFET N/P-CH 30V/20V SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock3,710,988
SI4948BEY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock157,068
DMC2041UFDB-7
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

Package: 6-UDFN Exposed Pad

Stock5,920
IRF8915TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 8.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock436,596
CSD87330Q3D
Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

Package: 8-PowerLDFN

Stock203,400
DMN62D2UDW-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

Package: -

Request a Quote
GSFK0300
Good-Ark Semiconductor

MOSFET 2N-CH 30V 0.8A SOT363

Package: -

Stock8,034
SIA938DJT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

Package: -

Stock35,379

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF5810TR	Infineon Technologies	MOSFET 2P-CH 20V 2.9A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,328	Logic Level Gate	20V	2.9A	90 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	9.6nC @ 4.5V	650pF @ 16V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SQJ962EP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 25W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock32,892	Logic Level Gate	60V	8A	60 mOhm @ 4.3A, 10V	2.5V @ 250µA	14nC @ 10V	475pF @ 25V	25W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5903DC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 2.1A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	Package: 8-SMD, Flat Lead	Stock5,504	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	600mV @ 250µA (Min)	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
GWM160-0055X1-SL	IXYS	MOSFET 6N-CH 55V 150A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock4,432	Standard	55V	150A	3.3 mOhm @ 100A, 10V	4.5V @ 1mA	105nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
SI6928DQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock3,984	Logic Level Gate	30V	4A	35 mOhm @ 4A, 10V	1V @ 250µA	14nC @ 5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI1033X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.145A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 145mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock324,000	Logic Level Gate	20V	145mA	8 Ohm @ 150mA, 4.5V	1.2V @ 250µA	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDR8305N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 4.5A SSOT-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: SuperSOT?-8	Package: 8-SMD, Gull Wing	Stock3,216	Logic Level Gate	20V	4.5A	22 mOhm @ 4.5A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1600pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Gull Wing	SuperSOT?-8
APTC60DSKM45T1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock3,072	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
DMP3056LSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 6.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock634,416	Logic Level Gate	30V	6.9A	45 mOhm @ 6A, 10V	2.1V @ 250µA	13.7nC @ 10V	722pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ECH8657-TL-H	ON Semiconductor	MOSFET 2N-CH 35V 4.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock36,000	Logic Level Gate	35V	4.5A	59 mOhm @ 2A, 10V	-	4.5nC @ 10V	230pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
QS8M11TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 3.5A TSMT8 FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock2,896	-	30V	3.5A	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	TSMT8
AO4803A	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock895,164	Logic Level Gate	30V	5A	46 mOhm @ 5A, 10V	2.5V @ 250µA	11nC @ 10V	520pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTJD4158CT1G	ON Semiconductor	MOSFET N/P-CH 30V/20V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,710,988	Logic Level Gate	30V, 20V	250mA, 880mA	1.5 Ohm @ 10mA, 4.5V	1.5V @ 100µA	1.5nC @ 5V	33pF @ 5V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
SI4948BEY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 2.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock157,068	Logic Level Gate	60V	2.4A	120 mOhm @ 3.1A, 10V	3V @ 250µA	22nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC2041UFDB-7	Diodes Incorporated	MOSFET N/P-CH 20V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock5,920	Standard	20V	4.7A, 3.2A	40 mOhm @ 4.2A, 4.5V	1.4V @ 250µA	15nC @ 8V	713pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
IRF8915TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 8.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock436,596	Logic Level Gate	20V	8.9A	18.3 mOhm @ 8.9A, 10V	2.5V @ 250µA	7.4nC @ 4.5V	540pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CSD87330Q3D	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (3.3x3.3)	Package: 8-PowerLDFN	Stock203,400	Logic Level Gate	30V	20A	-	2.1V @ 250µA	5.8nC @ 4.5V	900pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
DMN62D2UDW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
GSFK0300	Good-Ark Semiconductor	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Power - Max: 275mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock8,034	-	30V	800mA (Tc)	450mOhm @ 300mA, 4.5V	1.2V @ 250µA	5.2nC @ 4.5V	146pF @ 15V	275mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SIA938DJT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	Package: -	Stock35,379	-	20V	4.5A (Ta), 4.5A (Tc)	21.5mOhm @ 5A, 10V	1.5V @ 250µA	11.5nC @ 10V	425pF @ 10V	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
IRF7313TRPBFXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8DSO-902 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-902	Package: -	Stock22,074	-	30V	6.5A (Ta)	29mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8-902
FF6MR12W2M1HPB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 200A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Stock54	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
MTC120WX55GD-SMD	IXYS	MOSFET 6N-CH 55V 150A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	55V	150A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	100nC @ 10V	6970pF @ 25V	-	-55°C ~ 175°C (TJ)	-	-	-
DF419MR20W3M1HFB11BPSA1	Infineon Technologies	MOSFET 4N-CH 2000V 50A AG-EASY3B FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V Vgs(th) (Max) @ Id: 5.15V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY3B	Package: -	Stock3	-	2000V (2kV)	50A (Tj)	26.5mOhm @ 60A, 18V	5.15V @ 34mA	234nC @ 18V	7240pF @ 1.2kV	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY3B
FF3MR12KM1HPHPSA1	Infineon Technologies	FF3MR12KM1HPHPSA1 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V Vgs(th) (Max) @ Id: 5.1V @ 112mA Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	Package: -	Request a Quote	-	1200V (1.2kV)	220A	4.44mOhm @ 280A, 18V	5.1V @ 112mA	800nC @ 18V	24200pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-62MMHB
EPC2104	EPC	GANFET 2N-CH 100V 23A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Stock13,416	-	100V	23A	6.3mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
DMC3732UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Power - Max: 540mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	30V	1.1A (Ta), 700mA (Ta)	460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V	0.95V @ 250µA, 1.1V @ 250µA	0.9nC @ 4.5V, 1.6nC @ 8V	40.8pF @ 25V, 54pF @ 15V	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
LP8M3FP8TB1	Rohm Semiconductor	MOSFET N-CH SOP8G FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-