Page 88 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AUIRF7309Q
Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

Package: 8-SOIC

Stock3,216
AO4801AL_001
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,328
AO4613
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock435,144
SI3909DV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock156,012
NTUD3129PT5G
ON Semiconductor

MOSFET 2P-CH 20V 0.14A SOT-963

Package: SOT-963

Stock4,928
SI5944DU-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 6A 8PWRPAK

Package: PowerPAK? ChipFET? Dual

Stock16,812
FDW2501N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock59,844
IPG20N04S412ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock3,664
FMK75-01F
IXYS

MOSFET 2N-CH 100V 75A I4-PAC-5

Package: i4-Pac?-5

Stock3,632
FDS8984_F085
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,136
CPH5617-TL-E
ON Semiconductor

MOSFET 2N-CH 30V 0.15A CPH5

Package: 5-SMD, Gull Wing

Stock4,208
SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock7,968
FDMD86100
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

Package: 8-PowerWDFN

Stock6,240
AO4612
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,116,912
UM6J1NTN
Rohm Semiconductor

MOSFET 2P-CH 30V 0.2A UMT6

Package: 6-TSSOP, SC-88, SOT-363

Stock108,012
FDG6304P
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.41A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,579,360
DMP2200UDW-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.9A SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock59,928
G4616
Goford Semiconductor

MOSFET N/P-CH 40V 8A/7A 8SOP

Package: -

Stock10,914
DMTH4011SPDWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

Package: -

Request a Quote
DI016N06PQ2-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7309Q	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	Package: 8-SOIC	Stock3,216	Logic Level Gate	30V	4A, 3A	50 mOhm @ 2.4A, 10V	3V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
AO4801AL_001	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,328	Logic Level Gate	30V	5A	48 mOhm @ 5A, 10V	1.3V @ 250µA	9nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4613	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock435,144	Logic Level Gate	30V	-	24 mOhm @ 7.2A, 10V	3V @ 250µA	15nC @ 10V	630pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI3909DV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock156,012	Logic Level Gate	20V	-	200 mOhm @ 1.8A, 4.5V	500mV @ 250µA (Min)	4nC @ 4.5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
NTUD3129PT5G	ON Semiconductor	MOSFET 2P-CH 20V 0.14A SOT-963 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock4,928	Logic Level Gate	20V	140mA	5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
SI5944DU-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 6A 8PWRPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Power - Max: 10W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock16,812	Logic Level Gate	40V	6A	112 mOhm @ 3.3A, 10V	3V @ 250µA	6.6nC @ 10V	210pF @ 20V	10W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
FDW2501N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock59,844	Logic Level Gate	20V	6A	18 mOhm @ 6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1290pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IPG20N04S412ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock3,664	Standard	40V	20A	12.2 mOhm @ 17A, 10V	4V @ 15µA	18nC @ 10V	1470pF @ 25V	41W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
FMK75-01F	IXYS	MOSFET 2N-CH 100V 75A I4-PAC-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock3,632	Standard	100V	75A	25 mOhm @ 50A, 10V	4V @ 4mA	180nC @ 10V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	i4-Pac?-5	ISOPLUS i4-PAC?
FDS8984_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,136	Logic Level Gate	30V	7A	23 mOhm @ 7A, 10V	2.5V @ 250µA	13nC @ 10V	635pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CPH5617-TL-E	ON Semiconductor	MOSFET 2N-CH 30V 0.15A CPH5 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150mA Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-SMD, Gull Wing Supplier Device Package: 5-CPH	Package: 5-SMD, Gull Wing	Stock4,208	Logic Level Gate	30V	150mA	3.7 Ohm @ 80mA, 4V	-	1.58nC @ 10V	7pF @ 10V	250mW	150°C (TJ)	Surface Mount	5-SMD, Gull Wing	5-CPH
SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock7,968	Logic Level Gate, 1.2V Drive	20V	180mA, 100mA	3 Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
FDMD86100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	Package: 8-PowerWDFN	Stock6,240	Standard	100V	10A	10.5 mOhm @ 10A, 10V	4V @ 250µA	30nC @ 10V	2060pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
AO4612	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 60V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,116,912	Logic Level Gate	60V	4.5A, 3.2A	56 mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UM6J1NTN	Rohm Semiconductor	MOSFET 2P-CH 30V 0.2A UMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Package: 6-TSSOP, SC-88, SOT-363	Stock108,012	Logic Level Gate	30V	200mA	1.4 Ohm @ 200mA, 10V	2.5V @ 1mA	-	30pF @ 10V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
FDG6304P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.41A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,579,360	Logic Level Gate	25V	410mA	1.1 Ohm @ 410mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	62pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMP2200UDW-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.9A SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock59,928	Standard	20V	900mA	260 mOhm @ 880mA, 4.5V	1.2V @ 250µA	2.1nC @ 4.5V	184pF @ 10V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
G4616	Goford Semiconductor	MOSFET N/P-CH 40V 8A/7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V Power - Max: 2W (Tc), 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOP Supplier Device Package: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock10,914	-	40V	8A (Tc), 7A (Tc)	20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V	2.5V @ 250µA	12nC @ 10V, 13nC @ 10V	415pF @ 20V, 520pF @ 20V	2W (Tc), 2.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
DMTH4011SPDWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Power - Max: 2.6W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (SWP)	Package: -	Request a Quote	-	40V	11.1A (Ta), 42A (Tc)	15mOhm @ 20A, 10V	4V @ 250µA	10.6nC @ 10V	805pF @ 20V	2.6W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (SWP)
DI016N06PQ2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V Power - Max: 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	Package: -	Request a Quote	Logic Level Gate	60V	16A (Tc)	33mOhm @ 15A, 10V	2.5V @ 250µA	19nC @ 10V	1260pF @ 30V	16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4
SI9634DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.2A/8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 2W (Ta), 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock29,919	-	60V	6.2A (Ta), 8A (Tc)	29mOhm @ 5A, 10V	3V @ 250µA	11nC @ 10V	420pF @ 30V	2W (Ta), 3.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN5L06VK-13A	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1.2V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM70AM07CT3AG	Microchip Technology	SIC 2N-CH 700V 353A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 988W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Stock9	-	700V	353A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	988W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
UPA672T-T1-A	Renesas Electronics Corporation	MOSFET 2N-CH 50V 0.1A SC-88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 3V Power - Max: 200mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SuperMiniMold	Package: -	Request a Quote	Logic Level Gate	50V	100mA	20Ohm @ 10mA, 4V	-	-	6pF @ 3V	200mW	-	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SuperMiniMold
FDB9403	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FDB12N50UTM	Fairchild Semiconductor	MOSFET N-CH 500V 10A D2PAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AO4818	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	-	30V	8A	19mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TSM085NB03DCR	Taiwan Semiconductor Corporation	MOSFET 2N-CH 30V 12A/51A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Package: -	Request a Quote	Logic Level Gate	30V	12A (Ta), 51A (Tc)	8.5mOhm @ 12A, 10V	2.5V @ 250µA	20nC @ 10V	1091pF @ 15V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)