Page 90 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF9952PBF
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,160
BUK7K6R2-40E/CX
NXP

MOSFET 2N-CH 56LFPAK

Package: -

Stock6,640
AON7932_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.6A/8.1A 8DFN

Package: 8-WDFN Exposed Pad

Stock2,352
EPC2100ENG
EPC

TRANS GAN 2N-CH 30V BUMPED DIE

Package: Die

Stock5,296
APTM120DDA57T3G
Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

Package: SP3

Stock3,840
IRF7341GTRPBF
Infineon Technologies

MOSFET N-CH 55V 5.1A

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,720
APTMC120AM20CT1AG
Microsemi Corporation

MOSFET 2N-CH 1200V 143A SP1

Package: SP1

Stock2,944
APTC60AM24T1G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP1

Package: SP1

Stock3,536
NTMFD4902NFT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

Package: 8-PowerTDFN

Stock7,456
SI4202DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 12.1A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,888
ALD1117SAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,112
SI7980DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock4,976
FC8J33040L
Panasonic Electronic Components

MOSFET 2N-CH 33V 5A WMINI8-F1

Package: 8-SMD, Flat Lead

Stock7,360
VT6K1T2CR
Rohm Semiconductor

MOSFET 2N-CH 20V 0.1A VMT6

Package: 6-SMD, Flat Leads

Stock69,324
SSM6N7002BFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

Package: SOT-563, SOT-666

Stock14,760,000
SSM6P49NU,LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-1Y1A

Package: 6-WDFN Exposed Pad

Stock46,176
SQJB48EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

Package: -

Stock8,850
DMT3020LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 16A 8SO

Package: -

Stock7,500
HUF75637S3
Fairchild Semiconductor

MOSFET N-CH 100V 44A D2PAK

Package: -

Request a Quote
MSCSM70VR1M10CTPAG
Microchip Technology

SIC 6N-CH 700V 238A

Package: -

Stock6

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9952PBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,160	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BUK7K6R2-40E/CX	NXP	MOSFET 2N-CH 56LFPAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock6,640	-	-	-	-	-	-	-	-	-	-	-	-
AON7932_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6.6A/8.1A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x3)	Package: 8-WDFN Exposed Pad	Stock2,352	Logic Level Gate	30V	6.6A, 8.1A	20 mOhm @ 6.6A, 10V	2.4V @ 250µA	6.5nC @ 10V	460pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x3)
EPC2100ENG	EPC	TRANS GAN 2N-CH 30V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock5,296	GaNFET (Gallium Nitride)	30V	9.5A, 38A	8 mOhm @ 25A, 5V	2.5V @ 4mA	3.5nC @ 15V	380pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
APTM120DDA57T3G	Microsemi Corporation	MOSFET 2N-CH 1200V 17A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock3,840	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
IRF7341GTRPBF	Infineon Technologies	MOSFET N-CH 55V 5.1A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,720	Standard	55V	5.1A	50 mOhm @ 5.1A, 10V	1V @ 250µA (Min)	44nC @ 10V	780pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTMC120AM20CT1AG	Microsemi Corporation	MOSFET 2N-CH 1200V 143A SP1 FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 143A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V Power - Max: 600W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock2,944	Standard	1200V (1.2kV)	143A	17 mOhm @ 100A, 20V	2.3V @ 2mA (Typ)	360nC @ 20V	5960pF @ 1000V	600W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTC60AM24T1G	Microsemi Corporation	MOSFET 2N-CH 600V 95A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock3,536	Standard	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
NTMFD4902NFT3G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 1.1W, 1.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Package: 8-PowerTDFN	Stock7,456	Logic Level Gate	30V	10.3A, 13.3A	6.5 mOhm @ 10A, 10V	2.2V @ 250µA	9.7nC @ 4.5V	1150pF @ 15V	1.1W, 1.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
SI4202DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 12.1A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.1A Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Power - Max: 3.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,888	Logic Level Gate	30V	12.1A	14 mOhm @ 8A, 10V	2.5V @ 250µA	17nC @ 10V	710pF @ 15V	3.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD1117SAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8SOIC FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,112	Standard	10.6V	-	1800 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7980DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8A PPAK SO-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V Power - Max: 19.8W, 21.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock4,976	Standard	20V	8A	22 mOhm @ 5A, 10V	2.5V @ 250µA	27nC @ 10V	1010pF @ 10V	19.8W, 21.9W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FC8J33040L	Panasonic Electronic Components	MOSFET 2N-CH 33V 5A WMINI8-F1 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 38 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	Package: 8-SMD, Flat Lead	Stock7,360	Standard	33V	5A	38 mOhm @ 2.5A, 10V	2.5V @ 260µA	2.8nC @ 4.5V	220pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
VT6K1T2CR	Rohm Semiconductor	MOSFET 2N-CH 20V 0.1A VMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	Package: 6-SMD, Flat Leads	Stock69,324	Logic Level Gate, 1.2V Drive	20V	100mA	3.5 Ohm @ 100mA, 4.5V	1V @ 100µA	-	7.1pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	VMT6
SSM6N7002BFE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock14,760,000	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
SSM6P49NU,LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 2-1Y1A FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	Package: 6-WDFN Exposed Pad	Stock46,176	Logic Level Gate	20V	4A	45 mOhm @ 3.5A, 10V	1.2V @ 1mA	6.74nC @ 4.5V	480pF @ 10V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFN (2x2)
SQJB48EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock8,850	-	40V	30A (Tc)	5.2mOhm @ 8A, 10V	3.3V @ 250µA	40nC @ 10V	2350pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMT3020LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 16A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Stock7,500	-	30V	16A (Tc)	20mOhm @ 9A, 10V	2.5V @ 250µA	7nC @ 10V	393pF @ 15V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
HUF75637S3	Fairchild Semiconductor	MOSFET N-CH 100V 44A D2PAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM70VR1M10CTPAG	Microchip Technology	SIC 6N-CH 700V 238A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock6	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
TSM6968SDCA	Taiwan Semiconductor Corporation	MOSFET 2N-CH 20V 6.5A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 1.04W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: -	Request a Quote	-	20V	6.5A (Ta)	22mOhm @ 6.5A, 4.5V	1V @ 250µA	20nC @ 4.5V	950pF @ 10V	1.04W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMTH10H017LPDQ-13	Diodes Incorporated	MOSFET 2N-CH 100V 13A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Power - Max: 1.5W (Ta), 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type E)	Package: -	Stock7,500	-	100V	13A (Ta), 59A (Tc)	17.4mOhm @ 17A, 10V	3V @ 250µA	28.6nC @ 10V	1986pF @ 50V	1.5W (Ta), 93W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type E)
IRF7506TR	Infineon Technologies	MOSFET 2P-CH 30V 1.7A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	Package: -	Request a Quote	Logic Level Gate	30V	1.7A	270mOhm @ 1.2A, 10V	1V @ 250µA	11nC @ 10V	180pF @ 25V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
WAS310M17BM3	Wolfspeed, Inc.	SIC 1700V 310A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 310A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	310A	-	-	-	-	-	-	Chassis Mount	Module	-
SD5000N-PDIP-16L-ROHS	Linear Integrated Systems, Inc.	MOSFET 4N-CH 20V 0.05A 16DIP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 70Ohm @ 1mA, 5V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	Package: -	Stock1,296	-	20V	50mA (Ta)	70Ohm @ 1mA, 5V	1.5V @ 1µA	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-DIP
FW340-M-TL-E-SY	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAS350M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 417A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	417A (Tc)	5.2mOhm @ 350A, 15V	3.6V @ 85mA	844nC @ 15V	25700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
SSM6N357R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.65A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock20,688	-	60V	650mA (Ta)	1.8Ohm @ 150mA, 5V	2V @ 1mA	1.5nC @ 5V	60pF @ 12V	1.5W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F