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Infineon Technologies |
MOSFET 2P-CH 20V 7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,296 |
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Logic Level Gate | 20V | 7A | 30 mOhm @ 7A, 4.5V | 1.2V @ 60µA | 35.8nC @ 4.5V | 1513pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
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Infineon Technologies |
MOSFET 2P-CH 20V 3.9A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock95,316 |
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Logic Level Gate | 20V | 3.9A | 51 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 14A/11A 14SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A, 11A
- Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 1.3W, 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock72,000 |
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Logic Level Gate | 30V | 14A, 11A | 13.2 mOhm @ 11A, 10V | 3V @ 250µA | 24nC @ 10V | 920pF @ 15V | 1.3W, 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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ON Semiconductor |
MOSFET 2N-CH 50V 2A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock437,568 |
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Logic Level Gate | 50V | 2A | 300 mOhm @ 1.5A, 10V | 3V @ 250µA | 12.5nC @ 10V | 330pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 14A/11A 14-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A, 11A
- Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 1.3W, 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock96,912 |
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Logic Level Gate | 30V | 14A, 11A | 8.7 mOhm @ 14A, 10V | 3V @ 250µA | 24nC @ 15V | 920pF @ 15V | 1.3W, 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.25A CST6D
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Power - Max: 140mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: CST6D
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Package: 6-SMD, Flat Leads |
Stock4,592 |
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Logic Level Gate | 20V | 250mA | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 140mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | CST6D |
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ON Semiconductor |
MOSFET 2P-CH 20V 2.1A CHIPFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.1A
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock6,000,000 |
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Logic Level Gate | 20V | 2.1A | 155 mOhm @ 2.1A, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | 300pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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Microsemi Corporation |
MOSFET 2N-CH 500V 90A SP4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock6,144 |
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Standard | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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IXYS |
MOSFET 6N-CH 100V 210A V2
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 210A
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
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Package: V2-PAK |
Stock7,968 |
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Standard | 100V | 210A | 5.2 mOhm @ 100A, 10V | 4V @ 2mA | 430nC @ 10V | - | - | -40°C ~ 175°C (TJ) | Through Hole | V2-PAK | V2-PAK |
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Diodes Incorporated |
MOSFET 2N-CH 20V 2.5A 8MSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
- Power - Max: 1.04W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock60,012 |
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Logic Level Gate | 20V | 2.5A | 130 mOhm @ 1.7A, 4.5V | 3V @ 250µA | 6nC @ 4.5V | 700pF @ 15V | 1.04W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Advanced Linear Devices Inc. |
MOSFET N/P-CH 10.6V 8SOIC
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
- Vgs(th) (Max) @ Id: 1V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,136 |
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Standard | 10.6V | - | 1800 Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
25V SYMMETRIC DUAL N-CHANNEL MOS
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 74A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 26W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,360 |
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Standard | 25V | 74A | - | 3V @ 250µA | 24nC @ 4.5V | - | 26W | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
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Vishay Siliconix |
MOSFET N/P-CH 40V 8A TO252-4
- FET Type: N and P-Channel, Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
- Power - Max: 10.8W, 24W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock6,792 |
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Standard | 40V | 8A | 37 mOhm @ 5A, 10V | 2.5V @ 250µA | 20nC @ 10V | 640pF @ 20V | 10.8W, 24W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
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ON Semiconductor |
MOSFET 2N-CH EFCP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.6W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA
- Supplier Device Package: 4-EFCP (1.61x1.61)
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Package: 4-XFBGA |
Stock4,528 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 29nC @ 4.5V | - | 1.6W | 150°C (TJ) | Surface Mount | 4-XFBGA | 4-EFCP (1.61x1.61) |
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ON Semiconductor |
MOSFET 2N-CH 4WLCSP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.6W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WLCSP (1.26x1.26)
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Package: 4-XFBGA, WLCSP |
Stock3,072 |
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Logic Level Gate, 2.5V Drive | - | - | - | 1.3V @ 1mA | 15nC @ 4.5V | - | 1.6W | 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (1.26x1.26) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock116,184 |
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Logic Level Gate | 20V | 7.5A | 18 mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 1333pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Nexperia USA Inc. |
MOSFET 2N-CH 20V 0.6A 6DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 600mA
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
- Power - Max: 265mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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Package: 6-XFDFN Exposed Pad |
Stock220,614 |
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Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA, 4.5V | 950mV @ 250µA | 0.7nC @ 4.5V | 21.3pF @ 10V | 265mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 0.24A SOT963
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 240mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: SOT-963 |
Stock242,400 |
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Logic Level Gate | 20V | 240mA | 3 Ohm @ 100mA, 4.5V | 1.05V @ 250µA | - | 14.1pF @ 15V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Microchip Technology |
MOSFET 6N/6P-CH 200V 56VQFN
- FET Type: 6 N and 6 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 56-VFQFN Exposed Pad
- Supplier Device Package: 56-QFN (8x8)
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Package: 56-VFQFN Exposed Pad |
Stock22,200 |
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Standard | 200V | - | 8 Ohm @ 1A, 10V | 2.4V @ 1mA | - | 50pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 56-VFQFN Exposed Pad | 56-QFN (8x8) |
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Vishay Siliconix |
MOSFET 2N-CH 60V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Power - Max: 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8
- Supplier Device Package: PowerPAK® SO-8
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Package: - |
Stock6,708 |
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- | 60V | 30A (Tc) | 13mOhm @ 10A, 10V | 3.5V @ 250µA | 35nC @ 10V | 1700pF @ 25V | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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onsemi |
MOSFET P-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
MOSFET 2N-CH 80V 0.295A 8DFN
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 295mA
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
- Power - Max: 250mW (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Request a Quote |
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- | 80V | 295mA | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 5nC @ 4.5V | 26pF @ 20V | 250mW (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Micro Commercial Co |
MOSFET 2N-CH 30V 0.5A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 500mA
- Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock17,670 |
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- | 30V | 500mA | 750mOhm @ 300mA, 10V | 1.5V @ 250µA | 1.28nC @ 10V | 28pF @ 15V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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IXYS |
MOSFET 600V 50A ISOPLUS-SMPD
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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Package: - |
Request a Quote |
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- | 600V | 50A (Tc) | - | - | - | - | - | - | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B |
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Renesas Electronics Corporation |
MOSFET 2N-CH 25V 20A/50A 8WPAK
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 20A, 50A
- Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
- Power - Max: 15W, 35W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-WPAK-D
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Package: - |
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Logic Level Gate | 25V | 20A, 50A | 7mOhm @ 10A, 10V | - | 7.7nC @ 4.5V | 1650pF @ 10V | 15W, 35W | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-WPAK-D |
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Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
MOSFET 2N-CH 5.5V 16A 20WLCSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 5.5V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Rds On (Max) @ Id, Vgs: 0.95mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5V
- Power - Max: 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-UFLGA, CSP
- Supplier Device Package: 20-WLCSP (2.48x1.17)
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Package: - |
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- | 5.5V | 16A (Ta) | 0.95mOhm @ 8A, 4.5V | 900mV @ 250µA | 5.5nC @ 4.5V | 600pF @ 5V | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 20-UFLGA, CSP | 20-WLCSP (2.48x1.17) |
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Panjit International Inc. |
MOSFET N/P-CH 30V 4.4A SOT23-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
Stock110,664 |
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- | 30V | 4.4A (Ta), 2.9A (Ta) | 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V | 2.1V @ 250µA | 5.8nC @ 10V, 9.8nC @ 10V | 235pF @ 15V, 396pF @ 15V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |