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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 6-TSOP
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock7,984 |
|
Logic Level Gate | 30V | 3.4A, 2.3A | 60 mOhm @ 3.4A, 10V | 1.5V @ 250µA | 12nC @ 10V | 285pF @ 15V | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Vishay Siliconix |
MOSFET 4N-CH 30V 0.83A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 830mA
- Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock2,672 |
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Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA, 5V | 2.5V @ 1mA | - | 110pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 8A 8TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock74,952 |
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Logic Level Gate | 20V | - | 13 mOhm @ 8A, 10V | 1V @ 250µA | 17.9nC @ 4.5V | 1810pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V 3.2A/2.5A SC75
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.5A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WFDFN Exposed Pad
- Supplier Device Package: SC-75, MicroFET
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Package: 6-WFDFN Exposed Pad |
Stock5,984 |
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Logic Level Gate | 20V | 3.2A, 2.5A | 90 mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 270pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-WFDFN Exposed Pad | SC-75, MicroFET |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 1.9A SSOT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.9A
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock393,288 |
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Logic Level Gate | 20V | 1.9A | 170 mOhm @ 1.9A, 4.5V | 1.5V @ 250µA | 4.2nC @ 4.5V | 441pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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IXYS |
MOSFET 6N-CH 75V 118A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 118A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Flat Leads
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Flat Leads |
Stock4,352 |
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Standard | 75V | 118A | 5.5 mOhm @ 60A, 10V | 4V @ 1mA | 100nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Flat Leads | ISOPLUS-DIL? |
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Vishay Siliconix |
MOSFET 2N-CH 20V 60A PWRPAK 8-SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
- Power - Max: 46W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock4,240 |
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Standard | 20V | 60A | 5.2 mOhm @ 20.7A, 4.5V | 1.5V @ 250µA | 105nC @ 10V | 4000pF @ 10V | 46W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/6.3A WDFN8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
- Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
- Power - Max: 800mW, 810mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-WDFN (3x3)
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Package: 8-PowerWDFN |
Stock3,456 |
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Logic Level Gate | 30V | 5.5A, 6.3A | 17.4 mOhm @ 9A, 10V | 2.2V @ 250µA | 12nC @ 10V | 605pF @ 15V | 800mW, 810mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3x3) |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Power - Max: 3.6W, 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock9,396 |
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Logic Level Gate | 30V | 8A | 15.3 mOhm @ 9.5A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1000pF @ 15V | 3.6W, 2.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 20V 1.7A SOT-26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.7A
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 279pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock733,356 |
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Logic Level Gate | 20V | 1.7A | 200 mOhm @ 1A, 4.5V | 1V @ 250µA | 3.8nC @ 4.5V | 279pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
MOSFET 2N-CH 30V 30A 5PTAB
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
- Power - Max: 8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-LGA
- Supplier Device Package: 5-PTAB (5x3.5)
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Package: 5-LGA |
Stock5,808 |
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Logic Level Gate | 30V | 30A | 7.7 mOhm @ 25A, 8V | 1.9V @ 250µA | 9.2nC @ 4.5V | 1150pF @ 15V | 8W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (5x3.5) |
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Nexperia USA Inc. |
NX3008NBKS/SC-88/REEL 7" Q3/T4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 445mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock5,824 |
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Standard | 30V | 350mA (Ta) | 1.4 Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | 50pF @ 15V | 445mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Vishay Siliconix |
MOSFET DUAL P-CHAN 60V SO8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
- Power - Max: 3.3W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,840 |
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Standard | 60V | 4.4A (Tc) | 85 mOhm @ 3.5A, 10V | 2.5V @ 250µA | 40nC @ 10V | 1140pF @ 25V | 3.3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/30A 8QFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 30A
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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Package: 8-PowerTDFN |
Stock5,040 |
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Logic Level Gate | 30V | 13A, 30A | 8 mOhm @ 13A, 10V | 2.7V @ 250µA | 30nC @ 10V | 2230pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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Infineon Technologies |
MOSFET 2P-CH 20V 9A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock32,034 |
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Logic Level Gate | 20V | 9A | 18 mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 9.2A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.2A
- Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock22,560 |
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Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 8.1A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.1A
- Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock33,840 |
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Logic Level Gate | 30V | 8.1A | 17.9 mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1020pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 3.6A 6MICROFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (2x2)
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Package: 6-UDFN Exposed Pad |
Stock13,428 |
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Logic Level Gate | 20V | 3.6A | 60 mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 885pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-MicroFET (2x2) |
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Rohm Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,766,380 |
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Logic Level Gate | 30V | 100mA | 8 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13pF @ 5V | 150mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Infineon Technologies |
SIC 1200V AG-EASY1B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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Package: - |
Stock84 |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Chassis Mount | Module | AG-EASY1B |
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Fairchild Semiconductor |
MOSFET 2N-CH 20V 10A 6WLCSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, WLCSP
- Supplier Device Package: 6-WLCSP (1.3x2.3)
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Package: - |
Request a Quote |
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- | 20V | 10A (Ta) | 13mOhm @ 1A, 4.5V | 1.2V @ 250µA | 24nC @ 10V | 2055pF @ 10V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.3x2.3) |
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onsemi |
MOSFET 2N-CH 12V 40A 10WLCSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-WLCSP (3.54x1.77)
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Package: - |
Stock288 |
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Logic Level Gate, 2.5V Drive | 12V | 40A (Ta) | 1.8mOhm @ 5A, 4.5V | 1.3V @ 1mA | 62nC @ 6V | - | 3.3W (Ta) | 150°C (TJ) | Surface Mount | 10-SMD, No Lead | 10-WLCSP (3.54x1.77) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 20A/51A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
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- | 30V | 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc) | 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V | 2.2V @ 250µA, 1.9V @ 250µA | 30nC @ 10V, 40nC @ 10V | 1000pF @ 15V | 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (5x6) |
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Fairchild Semiconductor |
MOSFET N/P-CH 12V 20A TO263-5
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 10A (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V
- Power - Max: 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
- Supplier Device Package: TO-263-5
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Logic Level Gate | 12V | 20A (Tc), 10A (Tc) | 60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V | 1V @ 250µA | 25nC @ 10V, 24nC @ 10V | 750pF @ 10V, 775pF @ 10V | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-6, D2PAK (5 Leads + Tab), TO-263BA | TO-263-5 |
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Taiwan Semiconductor Corporation |
MOSFET N/P-CH 60V 2.5A/5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V
- Power - Max: 1.4W (Ta), 5.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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- | 60V | 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc) | 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V | 2.5V @ 250µA | 9.4nC @ 10V, 9nC @ 10V | 527pF @ 30V, 436pF @ 30V | 1.4W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Microchip Technology |
SIC 4N-CH 1200V/700V 173A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V
- Power - Max: 745W (Tc), 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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- | 1200V (1.2kV), 700V | 173A (Tc), 124A (Tc) | 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 6mA, 2.4V @ 4mA | 464nC, 215nC @ 20V | 6040pF @ 1000V, 4500pF @ 700V | 745W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Renesas Electronics Corporation |
MOSFET N/P-CH 20V SC-70 6SSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 350mA, 250mA
- Rds On (Max) @ Id, Vgs: 570mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 10V
- Power - Max: 200mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88
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Logic Level Gate | 20V | 350mA, 250mA | 570mOhm @ 300mA, 4.5V | - | - | 28pF @ 10V | 200mW | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 |