Page 98 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

SSM6N48FU,RF(D
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A

Package: 6-TSSOP, SC-88, SOT-363

Stock2,464
MP6K13TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 6A MPT6

Package: 6-SMD, Flat Leads

Stock180,000
FDD8424H_F085
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 9A/6.5A DPAK

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock7,888
2N7002V-TP
Micro Commercial Co

MOSFET 2N-CH 60V 0.28A SOT-563

Package: SOT-563, SOT-666

Stock6,704
IPG20N10S4L35ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock3,168
SP8K2FU6TB
Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,864
SI7270DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock6,720
ECH8655R-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 9A ECH8

Package: 8-SMD, Flat Lead

Stock77,748
DMP1055UFDB-7
Diodes Incorporated

MOSFET 2PCH 12V 3.9A UDFN2020

Package: 6-UDFN Exposed Pad

Stock144,000
IPG20N06S4L26ATMA1
Infineon Technologies

MOSFET 2N-CH 60V 20A TDSON-8

Package: 8-PowerVDFN

Stock3,584
CSD87351Q5D
Texas Instruments

MOSFET 2N-CH 30V 32A 8LSON

Package: 8-PowerLDFN

Stock194,016
ALD310708APCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

Package: 16-DIP (0.300", 7.62mm)

Stock7,600
ALD114904SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,432
IPG20N04S408AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock2,032
FDS9933A
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock522,816
SQJ946EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

Package: PowerPAK? SO-8 Dual

Stock6,688
DMN2029USD-13
Diodes Incorporated

MOSFET 2N-CH 20V 5.8A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,496
ZXMC3AMCTA
Diodes Incorporated

MOSFET N/P-CH 30V 2.9A/2.1A 8DFN

Package: 8-WDFN Exposed Pad

Stock42,000
QS8J4TR
Rohm Semiconductor

MOSFET 2P-CH 30V 4A TSMT8

Package: 8-SMD, Flat Lead

Stock49,608
DMG4800LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 7.5A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock52,740

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SSM6N48FU,RF(D	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock2,464	Logic Level Gate, 2.5V Drive	30V	100mA (Ta)	3.2 Ohm @ 10mA, 4V	1.5V @ 100µA	-	15.1pF @ 3V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
MP6K13TCR	Rohm Semiconductor	MOSFET 2N-CH 30V 6A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	Package: 6-SMD, Flat Leads	Stock180,000	Logic Level Gate	30V	6A	31 mOhm @ 6A, 10V	2.5V @ 1mA	5nC @ 5V	350pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
FDD8424H_F085	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 9A/6.5A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock7,888	Logic Level Gate	40V	9A, 6.5A	24 mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
2N7002V-TP	Micro Commercial Co	MOSFET 2N-CH 60V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock6,704	Standard	60V	280mA	2 Ohm @ 500mA, 10V	2.5V @ 250µA	-	50pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
IPG20N10S4L35ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.1V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Power - Max: 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock3,168	Logic Level Gate	100V	20A	35 mOhm @ 17A, 10V	2.1V @ 16µA	17.4nC @ 10V	1105pF @ 25V	43W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SP8K2FU6TB	Rohm Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,864	Logic Level Gate	30V	6A	30 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI7270DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 17.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock6,720	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.8V @ 250µA	21nC @ 10V	900pF @ 15V	17.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ECH8655R-TL-H	ON Semiconductor	MOSFET 2N-CH 24V 9A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock77,748	Logic Level Gate	24V	9A	17 mOhm @ 4.5A, 4.5V	-	16.8nC @ 10V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
DMP1055UFDB-7	Diodes Incorporated	MOSFET 2PCH 12V 3.9A UDFN2020 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock144,000	Standard	12V	3.9A	59 mOhm @ 3.6A, 4.5V	1V @ 250µA	20.8nC @ 8V	1028pF @ 6V	1.36W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
IPG20N06S4L26ATMA1	Infineon Technologies	MOSFET 2N-CH 60V 20A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 26 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power - Max: 33W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock3,584	Logic Level Gate	60V	20A	26 mOhm @ 17A, 10V	2.2V @ 10µA	20nC @ 10V	1430pF @ 25V	33W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
CSD87351Q5D	Texas Instruments	MOSFET 2N-CH 30V 32A 8LSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	Package: 8-PowerLDFN	Stock194,016	Logic Level Gate	30V	32A	7.6 mOhm @ 20A, 8V	2.1V @ 250µA	7.7nC @ 4.5V	1255pF @ 15V	12W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
ALD310708APCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 780mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock7,600	Standard	8V	-	-	780mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
ALD114904SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,432	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IPG20N04S408AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: 8-PowerVDFN	Stock2,032	Standard	40V	20A	7.6 mOhm @ 17A, 10V	4V @ 30µA	36nC @ 10V	2940pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
FDS9933A	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock522,816	Logic Level Gate	20V	3.8A	75 mOhm @ 3.8A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	600pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ946EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock6,688	Standard	40V	15A (Tc)	33 mOhm @ 7A, 10V	2.5V @ 250µA	20nC @ 10V	600pF @ 25V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMN2029USD-13	Diodes Incorporated	MOSFET 2N-CH 20V 5.8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,496	Logic Level Gate	20V	5.8A	25 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	18.6nC @ 8V	1171pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMC3AMCTA	Diodes Incorporated	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	Package: 8-WDFN Exposed Pad	Stock42,000	Logic Level Gate	30V	2.9A, 2.1A	120 mOhm @ 2.5A, 10V	3V @ 250µA	3.9nC @ 10V	190pF @ 25V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
QS8J4TR	Rohm Semiconductor	MOSFET 2P-CH 30V 4A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock49,608	Logic Level Gate	30V	4A	56 mOhm @ 4A, 10V	2.5V @ 1mA	13nC @ 10V	800pF @ 10V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMG4800LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 7.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Power - Max: 1.17W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock52,740	Logic Level Gate	30V	7.5A	16 mOhm @ 9A, 10V	1.6V @ 250µA	8.56nC @ 5V	798pF @ 10V	1.17W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMTH4014LPD-13	Diodes Incorporated	MOSFET 2N-CH 40V 10.6A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Power - Max: 2.41W (Ta), 42.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: -	Stock2,787	-	40V	10.6A (Ta), 43.6A (Tc)	15mOhm @ 20A, 10V	3V @ 250µA	10.2nC @ 10V	733pF @ 20V	2.41W (Ta), 42.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMN2053UVTQ-7	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Stock8,913	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V	369pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AO4600CL	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJT7002H_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock7,755	-	60V	250mA (Ta)	5Ohm @ 300mA, 10V	3V @ 250µA	1.3nC @ 4.5V	22pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NTND31211PZTAG	onsemi	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCQD09N06Y-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 30V Power - Max: 1.7W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	60V	9A (Ta)	20mOhm @ 9A, 10V	2.5V @ 250µA	16.5nC @ 10V	873pF @ 30V	1.7W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON3814L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x3)	Package: -	Request a Quote	-	20V	6A (Tc)	17mOhm @ 6A, 4.5V	1.1V @ 250µA	13nC @ 4.5V	1100pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x3)
AO4812	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	-	30V	6A	30mOhm @ 6A, 10V	2.4V @ 250µA	6.3nC @ 10V	310pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC