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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.6A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,952 |
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Standard | 20V | 7.6A | 23 mOhm @ 7.6A, 10V | 1.1V @ 250µA | 12.5nC @ 10V | 630pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2N-CH 30V 4A EMH8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-EMH
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Package: 8-SMD, Flat Lead |
Stock5,040 |
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Logic Level Gate | 30V | 4A | 59 mOhm @ 2A, 10V | - | 4.4nC @ 10V | 240pF @ 10V | 1.2W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
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Vishay Siliconix |
MOSFET 2N-CH 40V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,208 |
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Logic Level Gate | 40V | 5.3A | 21 mOhm @ 7.4A, 10V | 3V @ 250µA | 32nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 30V 4.4A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock435,036 |
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Logic Level Gate | 30V | 4.4A, 3.7A | 36 mOhm @ 5.9A, 10V | 1V @ 250µA (Min) | 20nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 20V 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock535,764 |
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Logic Level Gate | 20V | - | 200 mOhm @ 1.8A, 4.5V | 500mV @ 250µA (Min) | 4nC @ 4.5V | - | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,059,888 |
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Logic Level Gate | 30V | 5.7A | 22 mOhm @ 7.5A, 10V | 3V @ 250µA | 11nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock2,752 |
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Logic Level Gate | 40V | 20A | 7.2 mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,536 |
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Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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IXYS |
MOSFET 6N-CH 75V 110A 24-SMD
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 110A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SMD, Gull Wing
- Supplier Device Package: 24-SMD
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Package: 24-SMD, Gull Wing |
Stock2,112 |
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Standard | 75V | 110A | - | 4V @ 1mA | 115nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 24-SMD, Gull Wing | 24-SMD |
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ON Semiconductor |
MOSFET 2N-CH 40V 12A SO8FL
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 12A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Package: 8-PowerTDFN |
Stock2,112 |
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Logic Level Gate | 40V | 12A | 10 mOhm @ 15A, 10V | 2.4V @ 250µA | 23nC @ 10V | 1100pF @ 25V | 3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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Fairchild/ON Semiconductor |
40V DUAL AUTO N-CH POWER TRENCH
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
- Power - Max: 75W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
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Package: 8-PowerTDFN |
Stock3,248 |
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Standard | 40V | 20A (Tc) | 5.8 mOhm @ 20A, 10V | 4V @ 250µA | 43nC @ 10V | 2100pF @ 20V | 75W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) |
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Rohm Semiconductor |
MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,888 |
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Logic Level Gate, 4V Drive | 80V | 3.4A, 2.6A | 130 mOhm @ 3.4A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | 600pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 9.1A/10A 8DFN
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
- Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
- Power - Max: 1.9W, 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerVDFN |
Stock5,424 |
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Logic Level Gate | 30V | 9.1A, 10A | 14.4 mOhm @ 9.1A, 10V | 2.4V @ 250µA | 9nC @ 10V | 670pF @ 15V | 1.9W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN (5x6) |
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Nexperia USA Inc. |
MOSFET 2N-CH 30V 6.3A SOT96-1
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,232 |
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Logic Level Gate | 30V | 6.3A | 30 mOhm @ 7A, 10V | 2V @ 1mA | 14.6nC @ 10V | 560pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2N-CH 60V 6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
- Power - Max: 3.2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Package: 8-PowerTDFN |
Stock4,944 |
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Logic Level Gate | 60V | 6A | 39 mOhm @ 7.5A, 10V | 3V @ 250µA | 20nC @ 10V | 540pF @ 25V | 3.2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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Diodes Incorporated |
MOSFET N/P-CH 20V 2.5A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.6W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,264 |
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Standard | 20V | 2.5A | - | - | - | - | 1.6W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Nexperia USA Inc. |
MOSFET 2N-CH 100V 29.5A LFPAK56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 29.5A
- Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V
- Power - Max: 68W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock2,272 |
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Standard | 100V | 29.5A | 24.5 mOhm @ 10A, 10V | 4V @ 1mA | 38.1nC @ 10V | 2436pF @ 25V | 68W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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ON Semiconductor |
MOSFET 2N-CH 60V 0.294A SOT563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 294mA
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock2,114,760 |
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Logic Level Gate | 60V | 294mA | 1.6 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.7nC @ 4.5V | 24.5pF @ 20V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 0.52A SOT963
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
- Power - Max: 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: - |
Stock29,895 |
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- | 20V | 520mA (Ta) | 990mOhm @ 100mA, 4.5V | 1V @ 250µA | 0.35nC @ 4.5V | 21.5pF @ 15V | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Micro Commercial Co |
MOSFET 2N-CH 60V 8A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
- Power - Max: 9.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 60V | 8A | 22mOhm @ 8A, 10V | 3V @ 250µA | 41.9nC @ 10V | 2000pF @ 30V | 9.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V X4-DSN1717-
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, DSBGA
- Supplier Device Package: X4-DSN1717-4
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Package: - |
Request a Quote |
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- | 24V | 7.8A (Ta) | 22mOhm @ 3A, 4.5V | 1.4V @ 1mA | 12.5nC @ 4V | 1438pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, DSBGA | X4-DSN1717-4 |
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onsemi |
MOSFET 2N-CH 30V 12A/54A 12WQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
- Power - Max: 1W (Ta), 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerWQFN
- Supplier Device Package: 12-WQFN (3.3x3.3)
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Package: - |
Stock8,247 |
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- | 30V | 12A (Ta), 54A (Tc) | 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V | 2.2V @ 270µA | 15nC @ 10V, 14nC @ 10V | 1103pF @ 15V, 972pF @ 15V | 1W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWQFN | 12-WQFN (3.3x3.3) |
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Vishay Siliconix |
MOSFET 2N-CH 30V 4.4A SC70-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.9W (Ta), 7.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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Package: - |
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- | 30V | 4.4A (Ta), 4.5A (Tc) | 64mOhm @ 3A, 4.5V | 1.4V @ 250µA | 12nC @ 10V | - | 1.9W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.2A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Logic Level Gate | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Renesas Electronics Corporation |
MOSFET 2N-CH 60V 0.1A SC88
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88
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Logic Level Gate, 4.5V Drive | 60V | 100mA (Ta) | 2.7Ohm @ 100mA, 10V | 2.5V @ 250µA | 2nC @ 10V | 20pF @ 10V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 |
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Infineon Technologies |
MOSFET 2N-CH 40V 65A 8TDSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
- Power - Max: 3.8W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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- | 40V | 65A (Tc) | 6.2mOhm @ 35A, 10V | 3.9V @ 50µA | 57nC @ 10V | 2200pF @ 20V | 3.8W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
- Power - Max: 27W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Stock25,422 |
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- | 40V | 30A (Tc) | 7.5mOhm @ 6A, 10V | 2.2V @ 250µA | 32nC @ 10V | 1700pF @ 20V | 27W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Nexperia USA Inc. |
MOSFET 2N-CH 40V 40A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
- Power - Max: 64W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Stock4,653 |
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- | 40V | 40A (Ta) | 6.8mOhm @ 20A, 10V | 4V @ 1mA | 28.9nC @ 10V | 1947pF @ 25V | 64W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |