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Infineon Technologies |
FET RF 65V 1.99GHZ H-36260-2
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 15.9dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.8A
- Power - Output: 50W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36260-2
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Package: 2-Flatpack, Fin Leads |
Stock4,752 |
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1.99GHz | 15.9dB | 30V | - | - | 1.8A | 50W | 65V | 2-Flatpack, Fin Leads | H-36260-2 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 18DB SOT502A
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: 36A
- Noise Figure: -
- Current - Test: 1.3A
- Power - Output: 43W
- Voltage - Rated: 65V
- Package / Case: SOT-502A
- Supplier Device Package: LDMOST
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Package: SOT-502A |
Stock5,664 |
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2.11GHz ~ 2.17GHz | 18dB | 28V | 36A | - | 1.3A | 43W | 65V | SOT-502A | LDMOST |
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NXP |
FET RF 2CH 65V 1.99GHZ NI1230S-8
- Transistor Type: LDMOS (Dual)
- Frequency: 1.99GHz
- Gain: 18.2dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.6A
- Power - Output: 74W
- Voltage - Rated: 65V
- Package / Case: SOT-1110B
- Supplier Device Package: NI1230S-8
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Package: SOT-1110B |
Stock14,520 |
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1.99GHz | 18.2dB | 30V | - | - | 1.6A | 74W | 65V | SOT-1110B | NI1230S-8 |
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NXP |
FET RF 66V 880MHZ NI-780
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 20.8dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.4A
- Power - Output: 40W
- Voltage - Rated: 66V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock5,200 |
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880MHz | 20.8dB | 28V | - | - | 1.4A | 40W | 66V | NI-780 | NI-780 |
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Cree/Wolfspeed |
FET RF 120V 1.95GHZ 440196
- Transistor Type: Silicon Carbide MESFET
- Frequency: 1.95GHz
- Gain: 15dB
- Voltage - Test: 48V
- Current Rating: 1.8A
- Noise Figure: 3.1dB
- Current - Test: 500mA
- Power - Output: 12W
- Voltage - Rated: 120V
- Package / Case: 440196
- Supplier Device Package: 440196
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Package: 440196 |
Stock5,216 |
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1.95GHz | 15dB | 48V | 1.8A | 3.1dB | 500mA | 12W | 120V | 440196 | 440196 |
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Cree/Wolfspeed |
FET RF 120V 1.95GHZ 440166
- Transistor Type: Silicon Carbide MESFET
- Frequency: 1.95GHz
- Gain: 15dB
- Voltage - Test: 48V
- Current Rating: 1.8A
- Noise Figure: 3.1dB
- Current - Test: 500mA
- Power - Output: 12W
- Voltage - Rated: 120V
- Package / Case: 440166
- Supplier Device Package: 440166
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Package: 440166 |
Stock2,944 |
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1.95GHz | 15dB | 48V | 1.8A | 3.1dB | 500mA | 12W | 120V | 440166 | 440166 |
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NXP |
FET RF 68V 1.99GHZ TO270-4
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 14.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 950mA
- Power - Output: 22W
- Voltage - Rated: 68V
- Package / Case: TO-270-4
- Supplier Device Package: TO-270 WB-4
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Package: TO-270-4 |
Stock3,360 |
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1.99GHz | 14.5dB | 28V | - | - | 950mA | 22W | 68V | TO-270-4 | TO-270 WB-4 |
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NXP |
FET RF 65V 2.17GHZ NI-780
- Transistor Type: LDMOS
- Frequency: 2.16GHz ~ 2.17GHz
- Gain: 13.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.05A
- Power - Output: 23W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock4,864 |
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2.16GHz ~ 2.17GHz | 13.5dB | 28V | - | - | 1.05A | 23W | 65V | NI-780 | NI-780 |
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Infineon Technologies |
RF MOSFET TRANSISTORS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,392 |
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- | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
RF MOSFET LDMOS 28V H-36260-2
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 15.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.2A
- Power - Output: 180W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-36260-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock4,720 |
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2.11GHz ~ 2.17GHz | 15.5dB | 28V | 10µA | - | 1.2A | 180W | 65V | 2-Flatpack, Fin Leads, Flanged | H-36260-2 |
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Infineon Technologies |
IC RF FET LDMOS H-33288-6
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,736 |
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- | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
FET RF 72V 860MHZ M246
- Transistor Type: LDMOS
- Frequency: 860MHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: 14A
- Noise Figure: -
- Current - Test: 400mA
- Power - Output: 100W
- Voltage - Rated: 72V
- Package / Case: M246
- Supplier Device Package: M246
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Package: M246 |
Stock4,288 |
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860MHz | 16dB | 28V | 14A | - | 400mA | 100W | 72V | M246 | M246 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 13.3DB SOT539B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.45GHz
- Gain: 13.3dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 10mA
- Power - Output: 180W
- Voltage - Rated: 65V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
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Package: SOT539B |
Stock7,728 |
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2.45GHz | 13.3dB | 28V | - | - | 10mA | 180W | 65V | SOT539B | SOT539B |
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Ampleon USA Inc. |
RF FET LDMOS 65V 16.2DB SOT12587
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.81GHz ~ 1.88GHz
- Gain: 16.2dB
- Voltage - Test: 32V
- Current Rating: -
- Noise Figure: -
- Current - Test: 800mA
- Power - Output: 570W
- Voltage - Rated: 65V
- Package / Case: SOT-1258-7
- Supplier Device Package: SOT-1258-7
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Package: SOT-1258-7 |
Stock2,928 |
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1.81GHz ~ 1.88GHz | 16.2dB | 32V | - | - | 800mA | 570W | 65V | SOT-1258-7 | SOT-1258-7 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 20DB SOT1239B
- Transistor Type: LDMOS
- Frequency: 1.81GHz ~ 1.88GHz
- Gain: 20dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 800mA
- Power - Output: 35.5W
- Voltage - Rated: 65V
- Package / Case: SOT-1239B
- Supplier Device Package: CDFM6
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Package: SOT-1239B |
Stock7,936 |
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1.81GHz ~ 1.88GHz | 20dB | 28V | - | - | 800mA | 35.5W | 65V | SOT-1239B | CDFM6 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 19.5DB SOT1121B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.81GHz ~ 1.88GHz
- Gain: 19.5dB
- Voltage - Test: 28V
- Current Rating: 18A
- Noise Figure: -
- Current - Test: 550mA
- Power - Output: 40W
- Voltage - Rated: 65V
- Package / Case: SOT-1121B
- Supplier Device Package: CDFM4
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Package: SOT-1121B |
Stock3,008 |
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1.81GHz ~ 1.88GHz | 19.5dB | 28V | 18A | - | 550mA | 40W | 65V | SOT-1121B | CDFM4 |
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Broadcom Limited |
FET RF 5V 2GHZ SOT-343
- Transistor Type: pHEMT FET
- Frequency: 2GHz
- Gain: 16.6dB
- Voltage - Test: 3V
- Current Rating: 120mA
- Noise Figure: 0.5dB
- Current - Test: 60mA
- Power - Output: 20.4dBm
- Voltage - Rated: 5V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
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Package: SC-82A, SOT-343 |
Stock3,456 |
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2GHz | 16.6dB | 3V | 120mA | 0.5dB | 60mA | 20.4dBm | 5V | SC-82A, SOT-343 | SOT-343 |
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Broadcom Limited |
IC PHEMT 2GHZ 3V 60MA MINIPAK
- Transistor Type: pHEMT FET
- Frequency: 2GHz
- Gain: 17.5dB
- Voltage - Test: 3V
- Current Rating: 120mA
- Noise Figure: 0.5dB
- Current - Test: 60mA
- Power - Output: 21.4dBm
- Voltage - Rated: 5V
- Package / Case: 0505 (1412 Metric)
- Supplier Device Package: MiniPak 1412
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Package: 0505 (1412 Metric) |
Stock2,464 |
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2GHz | 17.5dB | 3V | 120mA | 0.5dB | 60mA | 21.4dBm | 5V | 0505 (1412 Metric) | MiniPak 1412 |
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NXP |
IC TRANS RF LDMOS
- Transistor Type: LDMOS
- Frequency: 520MHz
- Gain: 20.8dB
- Voltage - Test: 7.5V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 3W
- Voltage - Rated: 30V
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock7,376 |
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520MHz | 20.8dB | 7.5V | - | - | 100mA | 3W | 30V | TO-243AA | SOT-89-3 |
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IXYS |
RF MOSFET N-CHANNEL
- Transistor Type: N-Channel
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 500V
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: -
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Package: 6-SMD, Flat Lead Exposed Pad |
Stock6,032 |
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- | - | - | 1mA | - | - | - | 500V | 6-SMD, Flat Lead Exposed Pad | - |
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ON Semiconductor |
JFET N-CH 25V 60MA SOT23
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 60mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock42,780 |
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- | - | - | 60mA | - | - | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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NXP Semiconductors |
RF MOSFET LDMOS 28V 16DFN
- Transistor Type: LDMOS
- Frequency: 400MHz ~ 2.7GHz
- Gain: 18.9dB
- Voltage - Test: 28 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 60 mA
- Power - Output: 28.8dBm
- Voltage - Rated: 65 V
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-DFN (4x6)
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Package: - |
Request a Quote |
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400MHz ~ 2.7GHz | 18.9dB | 28 V | 10µA | - | 60 mA | 28.8dBm | 65 V | 16-VDFN Exposed Pad | 16-DFN (4x6) |
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Mini-Circuits |
RF MOSFET E-PHEMT 3V FG873
- Transistor Type: E-pHEMT
- Frequency: 6GHz
- Gain: 22.9dB
- Voltage - Test: 3 V
- Current Rating: -
- Noise Figure: 1.5dB
- Current - Test: 30 mA
- Power - Output: 20.2dB
- Voltage - Rated: 5 V
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: FG873
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Package: - |
Request a Quote |
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6GHz | 22.9dB | 3 V | - | 1.5dB | 30 mA | 20.2dB | 5 V | 4-SMD, No Lead | FG873 |
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MACOM Technology Solutions |
RF MOSFET
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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MACOM Technology Solutions |
RF MOSFET LDMOS LG-31275PS-6
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
RF MOSFET HEMT 50V 55-QP
- Transistor Type: HEMT
- Frequency: 2.7GHz ~ 2.9GHz
- Gain: 15.3dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 75 mA
- Power - Output: 335W
- Voltage - Rated: 125 V
- Package / Case: 55-QP
- Supplier Device Package: 55-QP
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Package: - |
Request a Quote |
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2.7GHz ~ 2.9GHz | 15.3dB | 50 V | - | - | 75 mA | 335W | 125 V | 55-QP | 55-QP |
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STMicroelectronics |
RF MOSFET LDMOS E2
- Transistor Type: LDMOS
- Frequency: 700MHz ~ 2.7GHz
- Gain: 19dB
- Voltage - Test: -
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: -
- Power - Output: 15W
- Voltage - Rated: 60 V
- Package / Case: E2
- Supplier Device Package: E2
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Package: - |
Request a Quote |
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700MHz ~ 2.7GHz | 19dB | - | 1µA | - | - | 15W | 60 V | E2 | E2 |
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Integra Technologies Inc. |
RF MOSFET HEMT 50V PL95A1
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 15dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 650W
- Voltage - Rated: 160 V
- Package / Case: PL95A1
- Supplier Device Package: PL95A1
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Package: - |
Stock6 |
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1.2GHz ~ 1.4GHz | 15dB | 50 V | - | - | 200 mA | 650W | 160 V | PL95A1 | PL95A1 |