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Infineon Technologies |
IC FET RF LDMOS 170W H-30275-4
- Transistor Type: LDMOS
- Frequency: 2.66GHz
- Gain: 15dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.8A
- Power - Output: 170W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30275-4
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Package: 2-Flatpack, Fin Leads |
Stock5,184 |
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2.66GHz | 15dB | 28V | 10µA | - | 1.8A | 170W | 65V | 2-Flatpack, Fin Leads | H-30275-4 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 17DB
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.7GHz
- Gain: 17.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 450mA
- Power - Output: -
- Voltage - Rated: 65V
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,440 |
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2.5GHz ~ 2.7GHz | 17.5dB | 28V | - | - | 450mA | - | 65V | - | - |
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NXP |
FET RF 65V 960MHZ NI-780
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 26V
- Current Rating: -
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 70W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock8,748 |
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960MHz | 18.5dB | 26V | - | - | 600mA | 70W | 65V | NI-780 | NI-780 |
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NXP |
FET RF 68V 1.99GHZ NI-880
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.15A
- Power - Output: 29W
- Voltage - Rated: 68V
- Package / Case: NI-880
- Supplier Device Package: NI-880
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Package: NI-880 |
Stock2,544 |
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1.93GHz ~ 1.99GHz | 16dB | 28V | - | - | 1.15A | 29W | 68V | NI-880 | NI-880 |
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CEL |
FET RF 8V 1.9GHZ 79A
- Transistor Type: HFET
- Frequency: 1.9GHz
- Gain: 10dB
- Voltage - Test: 3.5V
- Current Rating: 2.8A
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 32.5dBm
- Voltage - Rated: 8V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
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Package: 4-SMD, Flat Leads |
Stock3,376 |
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1.9GHz | 10dB | 3.5V | 2.8A | - | 200mA | 32.5dBm | 8V | 4-SMD, Flat Leads | 79A |
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NXP |
MOSFET N-CH 7V 30MA SOT343
- Transistor Type: N-Channel Dual Gate
- Frequency: 200MHz
- Gain: -
- Voltage - Test: 5V
- Current Rating: 30mA
- Noise Figure: 1dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 7V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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Package: SC-82A, SOT-343 |
Stock5,344 |
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200MHz | - | 5V | 30mA | 1dB | 10mA | - | 7V | SC-82A, SOT-343 | CMPAK-4 |
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Infineon Technologies |
FET RF LDMOS 8W SON10
- Transistor Type: LDMOS
- Frequency: 940MHz
- Gain: 20.7dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 8W
- Voltage - Rated: 65V
- Package / Case: 10-LDFN Exposed Pad
- Supplier Device Package: PG-SON-10
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Package: 10-LDFN Exposed Pad |
Stock2,752 |
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940MHz | 20.7dB | 28V | - | - | 100mA | 8W | 65V | 10-LDFN Exposed Pad | PG-SON-10 |
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Microsemi Corporation |
RF MOSFET N-CHANNEL 50V 4SMD
- Transistor Type: N-Channel
- Frequency: 80MHz
- Gain: 17dB
- Voltage - Test: 50V
- Current Rating: 4mA
- Noise Figure: -
- Current - Test: 800mA
- Power - Output: 600W
- Voltage - Rated: 170V
- Package / Case: 4-SMD
- Supplier Device Package: -
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Package: 4-SMD |
Stock7,456 |
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80MHz | 17dB | 50V | 4mA | - | 800mA | 600W | 170V | 4-SMD | - |
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M/A-Com Technology Solutions |
HEMT N-CH 28V 65W 3300-3800MHZ
- Transistor Type: HEMT
- Frequency: 3.3GHz ~ 3.8GHz
- Gain: 12dB
- Voltage - Test: 28V
- Current Rating: 19.5A
- Noise Figure: -
- Current - Test: 750mA
- Power - Output: 6W
- Voltage - Rated: 100V
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,144 |
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3.3GHz ~ 3.8GHz | 12dB | 28V | 19.5A | - | 750mA | 6W | 100V | - | - |
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Ampleon USA Inc. |
RF FET LDMOS 65V 19.7DB SOT502B
- Transistor Type: LDMOS
- Frequency: 920MHz ~ 960MHz
- Gain: 19.7dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.1A
- Power - Output: 35W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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Package: SOT-502B |
Stock7,104 |
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920MHz ~ 960MHz | 19.7dB | 30V | - | - | 1.1A | 35W | 65V | SOT-502B | SOT502B |
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Ampleon USA Inc. |
RF FET LDMOS 65V 15.6DB SOT12753
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.69GHz
- Gain: 15.6dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 280mA
- Power - Output: 155W
- Voltage - Rated: 65V
- Package / Case: SOT1275-3
- Supplier Device Package: SOT1275-3
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Package: SOT1275-3 |
Stock3,824 |
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2.5GHz ~ 2.69GHz | 15.6dB | 28V | - | - | 280mA | 155W | 65V | SOT1275-3 | SOT1275-3 |
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NXP |
FET RF 66V 960MHZ TO-270-4
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 19dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 300mA
- Power - Output: 35.5W
- Voltage - Rated: 66V
- Package / Case: TO-270BB
- Supplier Device Package: TO-270 WB-4 Gull
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Package: TO-270BB |
Stock9,516 |
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960MHz | 19dB | 28V | - | - | 300mA | 35.5W | 66V | TO-270BB | TO-270 WB-4 Gull |
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NXP |
FET RF 65V 2.14GHZ 24PQFN
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 32.6dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 40mA
- Power - Output: 2.4W
- Voltage - Rated: 65V
- Package / Case: 24-PowerQFN
- Supplier Device Package: 24-PQFN (8x8)
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Package: 24-PowerQFN |
Stock7,520 |
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2.14GHz | 32.6dB | 28V | - | - | 40mA | 2.4W | 65V | 24-PowerQFN | 24-PQFN (8x8) |
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Ampleon USA Inc. |
RF FET LDMOS 65V 15DB SOT608B
- Transistor Type: LDMOS
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 15dB
- Voltage - Test: 28V
- Current Rating: 8.2A
- Noise Figure: -
- Current - Test: 225mA
- Power - Output: 4.5W
- Voltage - Rated: 65V
- Package / Case: SOT-608B
- Supplier Device Package: CDFM2
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Package: SOT-608B |
Stock7,488 |
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3.4GHz ~ 3.6GHz | 15dB | 28V | 8.2A | - | 225mA | 4.5W | 65V | SOT-608B | CDFM2 |
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NXP |
JFET N-CH 30V 15MA SOT23
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 15mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 30V
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,232 |
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- | - | - | 15mA | - | - | - | 30V | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Cree/Wolfspeed |
200-W 4400-5000-MHZ 50-OHM I
- Transistor Type: HEMT
- Frequency: 5GHz
- Gain: 11.8dB
- Voltage - Test: 40V
- Current Rating: 17A
- Noise Figure: -
- Current - Test: 1A
- Power - Output: 200W
- Voltage - Rated: 125V
- Package / Case: 440217
- Supplier Device Package: 440217
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Package: 440217 |
Stock4,144 |
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5GHz | 11.8dB | 40V | 17A | - | 1A | 200W | 125V | 440217 | 440217 |
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MACOM Technology Solutions |
RF MOSFET LDMOS 50V H-36265-2
- Transistor Type: LDMOS
- Frequency: 960MHz ~ 1.6GHz
- Gain: 18.5dB
- Voltage - Test: 50 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 200W
- Voltage - Rated: 105 V
- Package / Case: H-36265-2
- Supplier Device Package: H-36265-2
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Package: - |
Stock105 |
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960MHz ~ 1.6GHz | 18.5dB | 50 V | 10µA | - | 100 mA | 200W | 105 V | H-36265-2 | H-36265-2 |
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Ampleon USA Inc. |
RF MOSFET LDMOS 30V SOT1258-4
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 15.4dB
- Voltage - Test: 30 V
- Current Rating: 2.8µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 600W
- Voltage - Rated: 65 V
- Package / Case: SOT-1258-4
- Supplier Device Package: SOT1258-4
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Package: - |
Stock87 |
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1.805GHz ~ 1.88GHz | 15.4dB | 30 V | 2.8µA | - | 800 mA | 600W | 65 V | SOT-1258-4 | SOT1258-4 |
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International Rectifier |
RF MOSFET
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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MACOM Technology Solutions |
RF MOSFET LDMOS 28V H-37248-4
- Transistor Type: LDMOS
- Frequency: 2.69GHz
- Gain: 15dB
- Voltage - Test: 28 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 280 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
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Package: - |
Request a Quote |
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2.69GHz | 15dB | 28 V | - | - | 280 mA | 28W | 65 V | H-37248-4 | H-37248-4 |
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Ampleon USA Inc. |
RF MOSFET LDMOS 28V SOT1483-1
- Transistor Type: LDMOS
- Frequency: 400MHz ~ 2.7GHz
- Gain: 19dB
- Voltage - Test: 28 V
- Current Rating: 1.4µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 20W
- Voltage - Rated: 65 V
- Package / Case: SOT-1483-1
- Supplier Device Package: SOT1483-1
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Package: - |
Request a Quote |
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400MHz ~ 2.7GHz | 19dB | 28 V | 1.4µA | - | 100 mA | 20W | 65 V | SOT-1483-1 | SOT1483-1 |
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MACOM Technology Solutions |
RF MOSFET LDMOS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - |
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Ampleon USA Inc. |
RF MOSFET LDMOS 36QFN
- Transistor Type: LDMOS
- Frequency: 3.3GHz ~ 3.8GHz
- Gain: 38dB
- Voltage - Test: -
- Current Rating: 1.4µA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 65 V
- Package / Case: 36-QFN Exposed Pad
- Supplier Device Package: 36-PQFN (12x7)
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Package: - |
Request a Quote |
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3.3GHz ~ 3.8GHz | 38dB | - | 1.4µA | - | - | - | 65 V | 36-QFN Exposed Pad | 36-PQFN (12x7) |
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NXP |
RF MOSFET LDMOS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - |
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Ampleon USA Inc. |
RF MOSFET LDMOS 28V SOT1258-4
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 17dB
- Voltage - Test: 28 V
- Current Rating: 2.8µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 400W
- Voltage - Rated: 65 V
- Package / Case: SOT-1258-4
- Supplier Device Package: SOT1258-4
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Package: - |
Stock144 |
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2.11GHz ~ 2.2GHz | 17dB | 28 V | 2.8µA | - | 800 mA | 400W | 65 V | SOT-1258-4 | SOT1258-4 |
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Microchip Technology |
RF MOSFET GAN 50V
- Transistor Type: GaN
- Frequency: 960MHz ~ 1.215GHz
- Gain: 18.1dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 10 mA
- Power - Output: 19W
- Voltage - Rated: 150 V
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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960MHz ~ 1.215GHz | 18.1dB | 50 V | - | - | 10 mA | 19W | 150 V | Module | - |
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MACOM Technology Solutions |
RF MOSFET HEMT 50V H-37265J-2
- Transistor Type: HEMT
- Frequency: 2.7GHz ~ 3.1GHz
- Gain: 15dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 20 mA
- Power - Output: 180W
- Voltage - Rated: 125 V
- Package / Case: H-37265J-2
- Supplier Device Package: H-37265J-2
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Package: - |
Stock144 |
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2.7GHz ~ 3.1GHz | 15dB | 50 V | - | - | 20 mA | 180W | 125 V | H-37265J-2 | H-37265J-2 |
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Microchip Technology |
RF MOSFET HEMT 50V 55-KR
- Transistor Type: HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 19.1dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 800W
- Voltage - Rated: 150 V
- Package / Case: 55-KR
- Supplier Device Package: 55-KR
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Package: - |
Request a Quote |
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1.03GHz ~ 1.09GHz | 19.1dB | 50 V | - | - | 100 mA | 800W | 150 V | 55-KR | 55-KR |