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Infineon Technologies |
MOSFET N-CH 80V 70A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,000 |
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MOSFET (Metal Oxide) | 80V | 70A (Tc) | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | ±20V | - | 100W (Tc) | 9.7 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 66W (Tc)
- Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,264 |
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MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | - | 66W (Tc) | 205 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NXP |
MOSFET N-CH 30V 1.9A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 132pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta), 2.09W (Tc)
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,128 |
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MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 4nC @ 10V | 132pF @ 15V | ±20V | - | 310mW (Ta), 2.09W (Tc) | 84 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 171A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock3,856 |
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MOSFET (Metal Oxide) | 30V | 17A (Ta), 171A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 40.2nC @ 4.5V | 5660pF @ 15V | ±20V | - | 950mW (Ta), 96.2W (Tc) | 2 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Panasonic Electronic Components |
MOSFET N-CH 30V 1A MINI-PWR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MiniP3-F1
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock2,064 |
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MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4V, 10V | 2V @ 1mA | - | 87pF @ 10V | ±20V | - | 1W (Ta) | 600 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | MiniP3-F1 | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 600V 10A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,160 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 850pF @ 50V | ±25V | - | 90W (Tc) | 450 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 200V 1A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 206pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock734,496 |
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MOSFET (Metal Oxide) | 200V | 1A (Tc) | 10V | 5V @ 250µA | 15.7nC @ 10V | 206pF @ 25V | ±20V | - | 2.9W (Tc) | 1.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,704 |
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MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | - | 92W (Tc) | 26.5 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 50A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1135W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock2,560 |
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MOSFET (Metal Oxide) | 800V | 50A (Tc) | 10V | 5.5V @ 8mA | 260nC @ 10V | 7200pF @ 25V | ±30V | - | 1135W (Tc) | 160 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 700MA TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock10,008 |
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MOSFET (Metal Oxide) | 1000V | 700mA (Tc) | 10V | 4.5V @ 25µA | 7.8nC @ 10V | 260pF @ 25V | ±30V | - | 25W (Tc) | 17 Ohm @ 375mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 6.9A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta), 32.5W (Tc)
- Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock25,980 |
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MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 30A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 13nC @ 11.5V | 795pF @ 15V | ±20V | - | 860mW (Ta), 32.5W (Tc) | 10.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V U-DFN2020-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.97W (Ta)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock2,160 |
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MOSFET (Metal Oxide) | 60V | 4.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.97W (Ta) | 110 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Nexperia USA Inc. |
MOSFET N-CH 100V 49A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 4293pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 166W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,168 |
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MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V, 10V | 2V @ 1mA | - | 4293pF @ 25V | ±10V | - | 166W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 272W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock16,596 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 5836pF @ 25V | ±15V | Temperature Sensing Diode | 272W (Tc) | 6.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Rohm Semiconductor |
NCH 600V 30A POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,524 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 1mA | 56nC @ 10V | 2350pF @ 25V | ±20V | - | 305W (Tc) | 130 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 525V 6A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock60,000 |
|
MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 4.5V @ 50µA | 33nC @ 10V | 870pF @ 50V | ±30V | - | 25W (Tc) | 1.15 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 100V LFPAK56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 65.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock4,720 |
|
MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V, 10V | 2.1V @ 1mA | 65.6nC @ 10V | 4640pF @ 25V | ±20V | - | 147W (Tc) | 21.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 47.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock289,488 |
|
MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | - | 47.6nC @ 5V | 4100pF @ 10V | ±20V | - | 2W (Ta) | 27 mOhm @ 7A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,656 |
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MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | ±20V | - | 57W (Tc) | 110 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 100A TO3P(L)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 30V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 797W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(L)
- Package / Case: TO-3PL
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Package: TO-3PL |
Stock7,476 |
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MOSFET (Metal Oxide) | 600V | 100A (Ta) | 10V | 3.7V @ 5mA | 360nC @ 10V | 15000pF @ 30V | ±30V | Super Junction | 797W (Tc) | 18 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock17,436 |
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MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 5400pF @ 25V | ±20V | - | 280W (Tc) | 75 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 49A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock14,928 |
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MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | ±20V | - | 94W (Tc) | 17.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 40V 6.4A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock834,912 |
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MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 26.1nC @ 10V | 1007pF @ 20V | ±20V | - | 2W (Ta) | 60 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS |
MOSFET N-CH 48A PLUS247-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 3.5V @ 140µA | 15 nC @ 10 V | 478 pF @ 400 V | ±20V | - | 52W (Tc) | 1.2Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MV8 40V P-CH LL IN S08FL PACKAGE
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 255µA
- Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock4,302 |
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MOSFET (Metal Oxide) | 40 V | 9.4A (Ta), 34.6A (Tc) | 4.5V, 10V | 2.4V @ 255µA | 16.3 nC @ 10 V | 1058 pF @ 20 V | ±20V | - | 3.5W (Ta), 44.1W (Tc) | 23mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 5V @ 250µA | 56.3 nC @ 10 V | 2540 pF @ 100 V | ±25V | - | 250W (Tc) | 110mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics Corporation |
TRANSISTOR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | 55A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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