Page 1013 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSD314SPEL6327HTSA1
Infineon Technologies

MOSFET P-CH 30V 1.5A SOT363

Package: 6-VSSOP, SC-88, SOT-363

Stock3,472
IPP50R250CPHKSA1
Infineon Technologies

MOSFET N-CH 500V 13A TO-220

Package: TO-220-3

Stock3,584
NTD85N02R
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock180,024
PHD55N03LTA,118
NXP

MOSFET N-CH 25V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,976
IRLR110ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,064
ZVN2120ASTOA
Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

Package: E-Line-3

Stock2,000
IRF744PBF
Vishay Siliconix

MOSFET N-CH 450V 8.8A TO-220AB

Package: TO-220-3

Stock60,000
BUK752R3-40C,127
NXP

MOSFET N-CH 40V 100A TO220AB

Package: TO-220-3

Stock4,560
STB18N55M5
STMicroelectronics

MOSFET N-CH 550V 13A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,832
STFU13N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220FP

Package: -

Stock5,552
IXFN80N50
IXYS

MOSFET N-CH 500V 80A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,896
PSMN013-100YSEX
Nexperia USA Inc.

MOSFET N-CH 100V LFPAK

Package: SC-100, SOT-669

Stock4,880
FQPF4N90CT
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4A

Package: TO-220-3 Full Pack

Stock6,432
IXFH14N100Q2
IXYS

MOSFET N-CH 1000V 14A TO-247AD

Package: TO-247-3

Stock5,120
NXV55UNR
Nexperia USA Inc.

NXV55UN/SOT23/TO-236AB

Package: -

Stock88,374
SIDR626EP-T1-RE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) 175C MOSFET

Package: -

Stock9,336
PJQ4407P_R1_00001
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote
DMT64M1LCG-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V V-DFN3333

Package: -

Request a Quote
SI3134KWA-TP
Micro Commercial Co

N-CHANNEL MOSFET,SOT-323

Package: -

Request a Quote
SQD50N04-5M6L_GE3
Vishay Siliconix

MOSFET N-CH 40V 50A TO252AA

Package: -

Stock1,029

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSD314SPEL6327HTSA1	Infineon Technologies	MOSFET P-CH 30V 1.5A SOT363 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT363-6 Package / Case: 6-VSSOP, SC-88, SOT-363	Package: 6-VSSOP, SC-88, SOT-363	Stock3,472	MOSFET (Metal Oxide)	30V	1.5A (Ta)	4.5V, 10V	2V @ 6.3µA	2.9nC @ 10V	294pF @ 15V	±20V	-	500mW (Ta)	140 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT363-6	6-VSSOP, SC-88, SOT-363
IPP50R250CPHKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,584	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	3.5V @ 520µA	36nC @ 10V	1420pF @ 100V	±20V	-	114W (Tc)	250 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
NTD85N02R	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock180,024	MOSFET (Metal Oxide)	24V	12A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	17.7nC @ 5V	2050pF @ 20V	±20V	-	1.25W (Ta), 78.1W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD55N03LTA,118	NXP	MOSFET N-CH 25V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,976	MOSFET (Metal Oxide)	25V	55A (Tc)	5V, 10V	2V @ 1mA	20nC @ 5V	950pF @ 25V	±20V	-	85W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR110ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,064	MOSFET (Metal Oxide)	100V	4.7A (Tc)	5V	2V @ 250µA	8nC @ 5V	235pF @ 25V	±20V	-	2.5W (Ta), 22W (Tc)	440 mOhm @ 2.35A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
ZVN2120ASTOA	Diodes Incorporated	MOSFET N-CH 200V 0.18A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock2,000	MOSFET (Metal Oxide)	200V	180mA (Ta)	10V	3V @ 1mA	-	85pF @ 25V	±20V	-	700mW (Ta)	10 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IRF744PBF	Vishay Siliconix	MOSFET N-CH 450V 8.8A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,000	MOSFET (Metal Oxide)	450V	8.8A (Tc)	10V	4V @ 250µA	80nC @ 10V	1400pF @ 25V	±20V	-	125W (Tc)	630 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK752R3-40C,127	NXP	MOSFET N-CH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11323pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,560	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 1mA	175nC @ 10V	11323pF @ 25V	±20V	-	333W (Tc)	2.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB18N55M5	STMicroelectronics	MOSFET N-CH 550V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 192 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,832	MOSFET (Metal Oxide)	550V	16A (Tc)	10V	5V @ 250µA	31nC @ 10V	1260pF @ 100V	±25V	-	110W (Tc)	192 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFU13N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220FP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,552	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFN80N50	IXYS	MOSFET N-CH 500V 80A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,896	MOSFET (Metal Oxide)	500V	80A	10V	4.5V @ 8mA	380nC @ 10V	9890pF @ 25V	±20V	-	780W (Tc)	55 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
PSMN013-100YSEX	Nexperia USA Inc.	MOSFET N-CH 100V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,880	MOSFET (Metal Oxide)	100V	82A (Tj)	10V	4V @ 1mA	16nC @ 10V	3775pF @ 50V	±20V	-	238W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FQPF4N90CT	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,432	MOSFET (Metal Oxide)	900V	4A (Tc)	10V	5V @ 250µA	22nC @ 10V	960pF @ 25V	±30V	-	47W (Tc)	4.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXFH14N100Q2	IXYS	MOSFET N-CH 1000V 14A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,120	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	5.5V @ 4mA	83nC @ 10V	2800pF @ 25V	±30V	-	500W (Tc)	950 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
NXV55UNR	Nexperia USA Inc.	NXV55UN/SOT23/TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 352 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 1.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock88,374	MOSFET (Metal Oxide)	30 V	1.9A (Ta)	1.5V, 4.5V	900mV @ 250µA	8.7 nC @ 4.5 V	352 pF @ 15 V	±8V	-	340mW (Ta), 2.1W (Tc)	66mOhm @ 1.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SIDR626EP-T1-RE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50.8A (Ta), 227A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 1.74mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock9,336	MOSFET (Metal Oxide)	60 V	50.8A (Ta), 227A (Tc)	7.5V, 10V	4V @ 250µA	102 nC @ 10 V	5130 pF @ 30 V	±20V	-	7.5W (Ta), 150W (Tc)	1.74mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
PJQ4407P_R1_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.5A (Ta), 30A (Tc)	4.5V, 10V	2.5V @ 250µA	11 nC @ 4.5 V	1169 pF @ 15 V	±20V	-	2W (Ta), 27W (Tc)	20mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
DMT64M1LCG-7	Diodes Incorporated	MOSFET BVDSS: 61V~100V V-DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 16.7A (Ta), 67.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	16.7A (Ta), 67.8A (Tc)	4.5V, 10V	2.5V @ 250µA	51.4 nC @ 10 V	2626 pF @ 30 V	±20V	-	1.2W (Ta)	5.4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
SI3134KWA-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	750mA	1.8V, 4.5V	1.1V @ 250µA	0.8 nC @ 4.5 V	33 pF @ 16 V	±12V	-	200mW (Ta)	300mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SQD50N04-5M6L_GE3	Vishay Siliconix	MOSFET N-CH 40V 50A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock1,029	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	75 nC @ 10 V	4000 pF @ 25 V	±20V	-	71W (Tc)	5.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPC95R750P7X7SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD3P02BATTL1	Rohm Semiconductor	PCH -100V -20A POWER MOSFET: RD3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,320	MOSFET (Metal Oxide)	100 V	20A (Tc)	6V, 10V	4V @ 1mA	39 nC @ 10 V	1480 pF @ 50 V	±20V	-	56W (Tc)	116mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIJH600E-T1-GE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Stock2,598	MOSFET (Metal Oxide)	60 V	37A (Ta), 373A (Tc)	7.5V, 10V	4V @ 250µA	212 nC @ 10 V	9950 pF @ 30 V	±20V	-	3.3W (Ta), 333W (Tc)	0.92mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
EPC7004BSH	EPC Space, LLC	GAN FET HEMT FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-FSMD-B Package / Case: 4-SMD, No Lead	Package: -	Request a Quote	GaNFET (Gallium Nitride)	100 V	30A (Tc)	5V	2.5V @ 7mA	11 nC @ 5 V	1000 pF @ 50 V	+6V, -4V	-	-	15mOhm @ 30A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	4-FSMD-B	4-SMD, No Lead
FDD3672-F085	onsemi	MOSFET N-CH 100V 44A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 6V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	44A (Tc)	6V, 10V	4V @ 250µA	36 nC @ 10 V	1635 pF @ 25 V	±20V	-	144W (Tc)	47mOhm @ 21A, 6V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN2040U-13	Diodes Incorporated	MOSFET N-CH 20V 6A SOT23 T&R 1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock28,308	MOSFET (Metal Oxide)	20 V	6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	7.5 nC @ 4.5 V	667 pF @ 10 V	±12V	-	800mW (Ta)	25mOhm @ 8.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
UPA2754GR-E1-AT	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCW200N10YA-BP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10051 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tj) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	4V @ 250µA	166 nC @ 10 V	10051 pF @ 50 V	±20V	-	375W (Tj)	2.7mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3