Page 1029 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

PMF250XN,115
NXP

MOSFET N-CH 30V 0.9A SOT323

Package: SC-70, SOT-323

Stock46,200
TPCP8004(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 8.3A PS-8

Package: 8-SMD, Flat Lead

Stock2,720
FCP7N60_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A TO-220

Package: TO-220-3

Stock4,048
AO4440
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock36,000
NVMFS6B14NT1G
ON Semiconductor

MOSFET N-CH 100V 15A SO8FL

Package: 8-PowerTDFN

Stock5,120
ZXMN6A09KQTC
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,504
AOT2916L
Alpha & Omega Semiconductor Inc.

MOSFET N CH 100V 5A TO220

Package: TO-220-3

Stock7,072
RCJ081N20TL
Rohm Semiconductor

MOSFET N-CH 200V 8A LPT

Package: SC-83

Stock4,000
IPA60R650CEXKSA1
Infineon Technologies

MOSFET N-CH 600V TO-220-3

Package: TO-220-3 Full Pack

Stock12,216
IRFSL3607PBF
Infineon Technologies

MOSFET N-CH 75V 80A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock23,934
SIRA20DP-T1-RE3
Vishay Siliconix

MOSFET N-CHAN 25V POWERPAK SO-8

Package: PowerPAK? SO-8

Stock22,524
STP10N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220

Package: TO-220-3

Stock24,000
DMG4466SSS-13
Diodes Incorporated

MOSFET N-CH 30V 10A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,276
ZVN4206A
Diodes Incorporated

MOSFET N-CH 60V 600MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock20,904
FDT86106LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 3.2A SOT-223-4

Package: TO-261-4, TO-261AA

Stock109,440
PMX800UPEZ
Nexperia USA Inc.

PMX800UPE/SOT8013/DFN0603-3

Package: -

Request a Quote
BSZ097N04LSGATMA1
Infineon Technologies

MOSFET N-CH 40V 12A/40A 8TSDSON

Package: -

Stock24,936
2SK1400A-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
RD3H200SNTL1
Rohm Semiconductor

MOSFET N-CH 45V 20A TO252

Package: -

Stock8,853
SSM3J375F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

Package: -

Stock68,580

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PMF250XN,115	NXP	MOSFET N-CH 30V 0.9A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 275mW (Ta), 1.065W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock46,200	MOSFET (Metal Oxide)	30V	900mA (Ta)	2.5V, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	50pF @ 15V	±12V	-	275mW (Ta), 1.065W (Tc)	300 mOhm @ 900mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
TPCP8004(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 8.3A PS-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 4.2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,720	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V, 10V	2.5V @ 1mA	26nC @ 10V	1270pF @ 10V	±20V	-	840mW (Ta)	8.5 mOhm @ 4.2A, 10V	150°C (TJ)	Surface Mount	PS-8 (2.9x2.4)	8-SMD, Flat Lead
FCP7N60_F080	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,048	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	83W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
AO4440	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock36,000	MOSFET (Metal Oxide)	60V	5A (Ta)	4.5V, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	±20V	-	2.5W (Ta)	55 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NVMFS6B14NT1G	ON Semiconductor	MOSFET N-CH 100V 15A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,120	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	20nC @ 10V	1300pF @ 50V	±16V	-	3.8W (Ta), 94W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
ZXMN6A09KQTC	Diodes Incorporated	MOSFET BVDSS: 41V 60V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1426pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10.1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,504	MOSFET (Metal Oxide)	60V	11.8A (Ta)	4.5V, 10V	3V @ 250µA	29nC @ 10V	1426pF @ 30V	±20V	-	10.1W (Ta)	40 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
AOT2916L	Alpha & Omega Semiconductor Inc.	MOSFET N CH 100V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,072	MOSFET (Metal Oxide)	100V	5A (Ta), 23A (Tc)	4.5V, 10V	2.7V @ 250µA	20nC @ 10V	870pF @ 50V	±20V	-	2.1W (Ta), 41.5W (Tc)	34 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
RCJ081N20TL	Rohm Semiconductor	MOSFET N-CH 200V 8A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 770 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: SC-83	Package: SC-83	Stock4,000	MOSFET (Metal Oxide)	200V	8A (Tc)	10V	5.25V @ 1mA	8.5nC @ 10V	330pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	770 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	LPTS (SC-83)	SC-83
IPA60R650CEXKSA1	Infineon Technologies	MOSFET N-CH 600V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,216	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	3.5V @ 200µA	20.5nC @ 10V	440pF @ 100V	±20V	-	28W (Tc)	650 mOhm @ 2.4A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IRFSL3607PBF	Infineon Technologies	MOSFET N-CH 75V 80A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock23,934	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 100µA	84nC @ 10V	3070pF @ 50V	±20V	-	140W (Tc)	9 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SIRA20DP-T1-RE3	Vishay Siliconix	MOSFET N-CHAN 25V POWERPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 10V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.58 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock22,524	MOSFET (Metal Oxide)	25V	81.7A (Ta), 100A (Tc)	4.5V, 10V	2.1V @ 250µA	200nC @ 10V	10850pF @ 10V	+16V, -12V	-	6.25W (Ta), 104W (Tc)	0.58 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STP10N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock24,000	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	13.5nC @ 10V	400pF @ 100V	±25V	-	85W (Tc)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
DMG4466SSS-13	Diodes Incorporated	MOSFET N-CH 30V 10A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,276	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.4V @ 250µA	17nC @ 10V	478.9pF @ 15V	±25V	-	1.42W (Ta)	23 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
ZVN4206A	Diodes Incorporated	MOSFET N-CH 60V 600MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock20,904	MOSFET (Metal Oxide)	60V	600mA (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FDT86106LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 3.2A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 108 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock109,440	MOSFET (Metal Oxide)	100V	3.2A (Ta)	4.5V, 10V	2.2V @ 250µA	7nC @ 10V	315pF @ 50V	±20V	-	2.2W (Ta)	108 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
PMX800UPEZ	Nexperia USA Inc.	PMX800UPE/SOT8013/DFN0603-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 300mW (Ta), 4.7W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0603-3 (SOT8013) Package / Case: 0201 (0603 Metric)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	900mA (Ta)	1.8V, 4.5V	1V @ 250µA	2.1 nC @ 4.5 V	124 pF @ 15 V	±8V	-	300mW (Ta), 4.7W (Tc)	850mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0603-3 (SOT8013)	0201 (0603 Metric)
BSZ097N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 12A/40A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock24,936	MOSFET (Metal Oxide)	40 V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 14µA	24 nC @ 10 V	1900 pF @ 20 V	±20V	-	2.1W (Ta), 35W (Tc)	9.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
2SK1400A-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD3H200SNTL1	Rohm Semiconductor	MOSFET N-CH 45V 20A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,853	MOSFET (Metal Oxide)	45 V	20A (Ta)	4V, 10V	2.5V @ 1mA	12 nC @ 5 V	950 pF @ 10 V	±20V	-	20W (Tc)	28mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3J375F-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2A S-MINI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock68,580	MOSFET (Metal Oxide)	20 V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	4.6 nC @ 4.5 V	270 pF @ 10 V	+6V, -8V	-	600mW (Ta)	150mOhm @ 1A, 4.5V	150°C	Surface Mount	S-Mini	TO-236-3, SC-59, SOT-23-3
PJD2NA1K_L2_00001	Panjit International Inc.	1000V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	2A (Ta)	10V	4V @ 250µA	14 nC @ 10 V	385 pF @ 25 V	±30V	-	50W (Tc)	9Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC014N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TDSON-8 FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock28,521	MOSFET (Metal Oxide)	60 V	100A (Tc)	6V, 10V	3.3V @ 120µA	104 nC @ 10 V	8125 pF @ 30 V	±20V	-	3W (Ta), 188W (Tc)	1.45mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
TKR74F04PB-LXGQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 250A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-220SM(W) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock6,852	MOSFET (Metal Oxide)	40 V	250A (Ta)	6V, 10V	3V @ 1mA	227 nC @ 10 V	14200 pF @ 10 V	±20V	-	375W (Tc)	0.74mOhm @ 125A, 10V	175°C	Surface Mount	TO-220SM(W)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STW75NF30AG	STMicroelectronics	MOSFET N-CH 300V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	60A	10V	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3
AO4430L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 18A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7270 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	18A (Ta)	4.5V, 10V	2.5V @ 250µA	124 nC @ 10 V	7270 pF @ 15 V	±20V	-	3W (Ta)	5.5mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SSF8970	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 200A, 80V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,970	MOSFET (Metal Oxide)	80 V	200A (Tc)	10V	3.5V @ 250µA	360 nC @ 10 V	23000 pF @ 30 V	±20V	-	208W (Tc)	2.6mOhm @ 20A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTMTS0D4N04CLTXG	onsemi	MOSFET N-CH 40V 79.8A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 244W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock4,932	MOSFET (Metal Oxide)	40 V	79.8A (Ta), 553.8A (Tc)	4.5V, 10V	2.5V @ 250µA	341 nC @ 10 V	20600 pF @ 20 V	±20V	-	5W (Ta), 244W (Tc)	0.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
IXTP48N20TM	IXYS	MOSFET N-CH 200V 48A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	4.5V @ 250µA	60 nC @ 10 V	3090 pF @ 25 V	±30V	-	250W (Tc)	50mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab