Page 1032 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLC8256ED
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock2,048
IRFU5505
Infineon Technologies

MOSFET P-CH 55V 18A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock52,680
HUF76645P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220AB

Package: TO-220-3

Stock115,080
IRFPS30N60KPBF
Vishay Siliconix

MOSFET N-CH 600V 30A SUPER247

Package: TO-274AA

Stock6,744
NTF3055-100T3LF
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock6,384
IRL540
Vishay Siliconix

MOSFET N-CH 100V 28A TO-220AB

Package: TO-220-3

Stock4,016
IXFN110N85X
IXYS

850V/110A ULT JUNCT X-CLASS HIPE

Package: SOT-227-4, miniBLOC

Stock4,208
TSM70N600ACL X0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-262-3 Short Leads, I2Pak

Stock5,184
IXTA05N100HV
IXYS

MOSFET N-CH 1KV 750MA TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,744
DMTH8012LK3Q-13
Diodes Incorporated

MOSFET NCH 80V 50A TO252

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock8,976
AOD5T40P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 400V 3.9A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,496
FDMS3662
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.9A POWER56

Package: 8-PowerTDFN

Stock14,340
STP11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO-220

Package: TO-220-3

Stock121,164
IPW65R190CFD
Infineon Technologies

MOSFET N-CH 650V 17.5A TO247

Package: TO-247-3

Stock103,464
IRL630PBF
Vishay Siliconix

MOSFET N-CH 200V 9A TO-220AB

Package: TO-220-3

Stock228,060
IPB200N15N3 G
Infineon Technologies

MOSFET N-CH 150V 50A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,880
BSO051N03MSGXUMA1
Infineon Technologies

SMALL SIGNAL FIELD-EFFECT TRANSI

Package: -

Request a Quote
MMIX1T660N04T4
IXYS

MOSFET N-CH 40V 660A 24SMPD

Package: -

Request a Quote
SPU08N05L
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IXTP230N04T4
IXYS

MOSFET N-CH 40V 230A TO220AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLC8256ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,048	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFU5505	Infineon Technologies	MOSFET P-CH 55V 18A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock52,680	MOSFET (Metal Oxide)	55V	18A (Tc)	10V	4V @ 250µA	32nC @ 10V	650pF @ 25V	±20V	-	57W (Tc)	110 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
HUF76645P3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock115,080	MOSFET (Metal Oxide)	100V	75A (Tc)	4.5V, 10V	3V @ 250µA	153nC @ 10V	4400pF @ 25V	±16V	-	310W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFPS30N60KPBF	Vishay Siliconix	MOSFET N-CH 600V 30A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock6,744	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 250µA	220nC @ 10V	5870pF @ 25V	±30V	-	450W (Tc)	190 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
NTF3055-100T3LF	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,384	MOSFET (Metal Oxide)	60V	3A (Ta)	10V	4V @ 250µA	22nC @ 10V	455pF @ 25V	±20V	-	1.3W (Ta)	110 mOhm @ 1.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRL540	Vishay Siliconix	MOSFET N-CH 100V 28A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,016	MOSFET (Metal Oxide)	100V	28A (Tc)	4V, 5V	2V @ 250µA	64nC @ 5V	2200pF @ 25V	±10V	-	150W (Tc)	77 mOhm @ 17A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFN110N85X	IXYS	850V/110A ULT JUNCT X-CLASS HIPE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1170W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,208	MOSFET (Metal Oxide)	850V	110A (Tc)	10V	5.5V @ 8mA	425nC @ 10V	17000pF @ 25V	±30V	-	1170W (Tc)	33 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
TSM70N600ACL X0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262S (I2PAK) Package / Case: TO-262-3 Short Leads, I2Pak	Package: TO-262-3 Short Leads, I2Pak	Stock5,184	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	4V @ 250µA	12.6nC @ 10V	743pF @ 100V	±30V	-	83W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262S (I2PAK)	TO-262-3 Short Leads, I2Pak
IXTA05N100HV	IXYS	MOSFET N-CH 1KV 750MA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,744	MOSFET (Metal Oxide)	1000V	750mA (Tc)	10V	4.5V @ 250µA	7.8nC @ 10V	260pF @ 25V	±30V	-	40W (Tc)	17 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMTH8012LK3Q-13	Diodes Incorporated	MOSFET NCH 80V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2051pF @ 40V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.6W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock8,976	MOSFET (Metal Oxide)	80V	50A (Tc)	-	3V @ 250µA	46.8nC @ 10V	2051pF @ 40V	-	-	2.6W (Ta)	16 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-4L	TO-252-5, DPak (4 Leads + Tab), TO-252AD
AOD5T40P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 400V 3.9A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 273pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,496	MOSFET (Metal Oxide)	400V	3.9A (Tc)	10V	5V @ 250µA	9nC @ 10V	273pF @ 100V	±30V	-	52W (Tc)	1.45 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS3662	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.9A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 14.8 mOhm @ 8.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,340	MOSFET (Metal Oxide)	100V	8.9A (Ta), 49A (Tc)	10V	4.5V @ 250µA	75nC @ 10V	4620pF @ 50V	±20V	-	2.5W (Ta), 104W (Tc)	14.8 mOhm @ 8.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
STP11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock121,164	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPW65R190CFD	Infineon Technologies	MOSFET N-CH 650V 17.5A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	4.5V @ 730µA	68nC @ 10V	1850pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRL630PBF	Vishay Siliconix	MOSFET N-CH 200V 9A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock228,060	MOSFET (Metal Oxide)	200V	9A (Tc)	4V, 5V	2V @ 250µA	40nC @ 10V	1100pF @ 25V	±10V	-	74W (Tc)	400 mOhm @ 5.4A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB200N15N3 G	Infineon Technologies	MOSFET N-CH 150V 50A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,880	MOSFET (Metal Oxide)	150V	50A (Tc)	8V, 10V	4V @ 90µA	31nC @ 10V	1820pF @ 75V	±20V	-	150W (Tc)	20 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSO051N03MSGXUMA1	Infineon Technologies	SMALL SIGNAL FIELD-EFFECT TRANSI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A	-	2V @ 250µA	-	3200 pF @ 15 V	±20V	-	2.5W	5.1mOhm @ 18A, 10V	-55°C ~ 150°C	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
MMIX1T660N04T4	IXYS	MOSFET N-CH 40V 660A 24SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 660A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	660A (Tc)	10V	4V @ 250µA	860 nC @ 10 V	44000 pF @ 25 V	±15V	-	830W (Tc)	0.85mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
SPU08N05L	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP230N04T4	IXYS	MOSFET N-CH 40V 230A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	230A (Tc)	10V	4V @ 250µA	140 nC @ 10 V	7400 pF @ 25 V	±15V	-	340W (Tc)	2.9mOhm @ 115A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
SISS65DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 25.9A/94A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25.9A (Ta), 94A (Tc)	4.5V, 10V	2.3V @ 250µA	138 nC @ 10 V	4930 pF @ 15 V	±20V	-	5.1W (Ta), 65.8W (Tc)	4.6mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
UF3SC120016K3S	Qorvo	SICFET N-CH 1200V 107A TO247-3 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock5,058	SiCFET (Cascode SiCJFET)	1200 V	107A (Tc)	12V	6V @ 10mA	218 nC @ 15 V	7824 pF @ 800 V	±20V	-	517W (Tc)	21mOhm @ 50A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
AOB2140L	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	57A (Ta), 195A (Tc)	4.5V, 10V	2.3V @ 250µA	180 nC @ 10 V	9985 pF @ 20 V	±20V	-	8.3W (Ta), 272W (Tc)	1.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT080N10KI	Goford Semiconductor	N100V,65A,RD<8M@10V,VTH1.0V~2.5V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2394 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	65A (Tc)	4.5V, 10V	2.5V @ 250µA	35 nC @ 10 V	2394 pF @ 50 V	±20V	-	79W (Tc)	8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTP082N65S3F	onsemi	MOSFET N-CH 650V 40A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,385	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	5V @ 4mA	81 nC @ 10 V	3410 pF @ 400 V	±30V	-	313W (Tc)	82mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SQJ868EP-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual	Package: -	Stock17,964	MOSFET (Metal Oxide)	40 V	58A (Tc)	10V	3.5V @ 250µA	55 nC @ 10 V	2450 pF @ 20 V	±20V	-	48W (Tc)	7.35mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PJS6415A_S2_00001	Panjit International Inc.	20V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5.2A (Ta)	1.8V, 4.5V	1.3V @ 250µA	10 nC @ 4.5 V	980 pF @ 10 V	±12V	-	2W (Ta)	46mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
DMT6016LJ3	Diodes Incorporated	MOSFET BVDSS: 41V-60V TO251 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-