Page 1031 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC3205ZEB
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock6,224
IRF7822PBF
Infineon Technologies

MOSFET N-CH 30V 18A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,160
2SK2962,T6F(M
Toshiba Semiconductor and Storage

MOSFET N-CH

Package: TO-226-3, TO-92-3 Long Body

Stock4,416
2SK2962(T6CANO,A,F
Toshiba Semiconductor and Storage

MOSFET N-CH

Package: TO-226-3, TO-92-3 Long Body

Stock6,832
H7N1002LS-E
Renesas Electronics America

MOSFET N-CH 100V LDPAK

Package: SC-83

Stock3,408
MCH3478-S-TL-H
ON Semiconductor

MOSFET N-CH 2A 30V MCPH3

Package: 3-SMD, Flat Leads

Stock3,632
AOWF240
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 21A TO262F

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,424
HUF76629D3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,504
STE250NS10
STMicroelectronics

MOSFET N-CH 100V 220A ISOTOP

Package: ISOTOP

Stock4,576
IXFK80N20Q
IXYS

MOSFET N-CH 200V 80A TO-264AA

Package: TO-264-3, TO-264AA

Stock5,840
IXFH12N80P
IXYS

MOSFET N-CH 800V 12A TO-247

Package: TO-247-3

Stock3,920
BUK9615-100E,118
Nexperia USA Inc.

MOSFET N-CH 100V 66A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,448
EKI06108
Sanken

MOSFET N-CH 60V 57A TO-220

Package: TO-220-3

Stock3,904
STB7NK80Z-1
STMicroelectronics

MOSFET N-CH 800V 5.2A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,128
IRLML2030TRPBF
Infineon Technologies

MOSFET N-CH 30V 2.7A SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,574,308
SI2316DS-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 2.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,380,708
IXFA56N30X3
IXYS

MOSFET N-CH 300V 56A TO263AA

Package: -

Stock444
2SK1848-TB-E
onsemi

NCH 4V DRIVE SERIES

Package: -

Request a Quote
2SK2084L-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
2SK2628LS
Sanyo

2SK2628 - N-CHANNEL SILICON MOSF

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC3205ZEB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,224	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7822PBF	Infineon Technologies	MOSFET N-CH 30V 18A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,160	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V	1V @ 250µA	60nC @ 5V	5500pF @ 16V	±12V	-	3.1W (Ta)	6.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2SK2962,T6F(M	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock4,416	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock6,832	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
H7N1002LS-E	Renesas Electronics America	MOSFET N-CH 100V LDPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 37.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	Package: SC-83	Stock3,408	MOSFET (Metal Oxide)	100V	75A (Ta)	4.5V, 10V	-	155nC @ 10V	9700pF @ 10V	±20V	-	100W (Tc)	10 mOhm @ 37.5A, 10V	150°C (TJ)	Surface Mount	4-LDPAK	SC-83
MCH3478-S-TL-H	ON Semiconductor	MOSFET N-CH 2A 30V MCPH3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock3,632	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	3-MCPH	3-SMD, Flat Leads
AOWF240	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 21A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,424	MOSFET (Metal Oxide)	40V	21A (Ta), 83A (Tc)	4.5V, 10V	2.2V @ 250µA	72nC @ 10V	3510pF @ 20V	±20V	-	2.1W (Ta), 33.3W (Tc)	2.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	-	TO-262-3 Long Leads, I2Pak, TO-262AA
HUF76629D3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,504	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
STE250NS10	STMicroelectronics	MOSFET N-CH 100V 220A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 900nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 125A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock4,576	MOSFET (Metal Oxide)	100V	220A (Tc)	10V	4V @ 250µA	900nC @ 10V	31000pF @ 25V	±20V	-	500W (Tc)	5.5 mOhm @ 125A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
IXFK80N20Q	IXYS	MOSFET N-CH 200V 80A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,840	MOSFET (Metal Oxide)	200V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4600pF @ 25V	±20V	-	360W (Tc)	28 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFH12N80P	IXYS	MOSFET N-CH 800V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,920	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5.5V @ 2.5mA	51nC @ 10V	2800pF @ 25V	±30V	-	360W (Tc)	850 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
BUK9615-100E,118	Nexperia USA Inc.	MOSFET N-CH 100V 66A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6813pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,448	MOSFET (Metal Oxide)	100V	66A (Tc)	5V, 10V	2.1V @ 1mA	60nC @ 5V	6813pF @ 25V	±10V	-	182W (Tc)	14 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
EKI06108	Sanken	MOSFET N-CH 60V 57A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 28.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,904	MOSFET (Metal Oxide)	60V	57A (Tc)	4.5V, 10V	2.5V @ 650µA	38.6nC @ 10V	2520pF @ 25V	±20V	-	90W (Tc)	9.2 mOhm @ 28.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STB7NK80Z-1	STMicroelectronics	MOSFET N-CH 800V 5.2A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1138pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,128	MOSFET (Metal Oxide)	800V	5.2A (Tc)	10V	4.5V @ 100µA	56nC @ 10V	1138pF @ 25V	±30V	-	125W (Tc)	1.8 Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLML2030TRPBF	Infineon Technologies	MOSFET N-CH 30V 2.7A SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,574,308	MOSFET (Metal Oxide)	30V	2.7A (Ta)	4.5V, 10V	2.3V @ 25µA	1nC @ 4.5V	110pF @ 15V	±20V	-	1.3W (Ta)	100 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
SI2316DS-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,380,708	MOSFET (Metal Oxide)	30V	2.9A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	7nC @ 10V	215pF @ 15V	±20V	-	700mW (Ta)	50 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFA56N30X3	IXYS	MOSFET N-CH 300V 56A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock444	MOSFET (Metal Oxide)	300 V	56A (Tc)	10V	4.5V @ 1.5mA	56 nC @ 10 V	3750 pF @ 25 V	±20V	-	320W (Tc)	27mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK1848-TB-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2084L-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2628LS	Sanyo	2SK2628 - N-CHANNEL SILICON MOSF FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI3139KL3B-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 328mW (Tj) Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	650mA (Ta)	1.8V, 4.5V	1.2V @ 250µA	1.4 nC @ 4.5 V	36 pF @ 10 V	±12V	-	328mW (Tj)	850mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
RJJ0621DPP-0P-T2	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8109-TE12L	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 10A 8-SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	2V @ 1mA	45 nC @ 10 V	2260 pF @ 10 V	-	-	-	20mOhm @ 5A, 10V	-	Surface Mount	8-SOP (5.5x6.0)	8-SOIC (0.173", 4.40mm Width)
PJC7406_R1_00001	Panjit International Inc.	20V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 1.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.3A (Ta)	1.8V, 4.5V	1.2V @ 250µA	4.6 nC @ 4.5 V	350 pF @ 10 V	±12V	-	350mW (Ta)	77mOhm @ 1.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SIRA99DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 47.9A/195A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V Vgs (Max): +16V, -20V FET Feature: - Power Dissipation (Max): 6.35W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock25,413	MOSFET (Metal Oxide)	30 V	47.9A (Ta), 195A (Tc)	4.5V, 10V	2.5V @ 250µA	260 nC @ 10 V	10955 pF @ 15 V	+16V, -20V	-	6.35W (Ta), 104W (Tc)	1.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SCT4062KWAHRTL	Rohm Semiconductor	1200V, 24A, 7-PIN SMD, TRENCH-ST FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 93W Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7LA Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	24A (Tc)	18V	4.8V @ 6.45mA	64 nC @ 18 V	1498 pF @ 800 V	+21V, -4V	-	93W	81mOhm @ 12A, 18V	175°C (TJ)	Surface Mount	TO-263-7LA	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NVMYS2D1N04CLTWG	onsemi	MOSFET N-CH 40V 29A/132A LFPAK4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	29A (Ta), 132A (Tc)	4.5V, 10V	2V @ 90µA	50 nC @ 10 V	3100 pF @ 25 V	±20V	-	3.9W (Ta), 83W (Tc)	2.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
DMT61M5SPSW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 (SWP) Package / Case: 8-PowerTDFN	Package: -	Stock7,500	MOSFET (Metal Oxide)	60 V	215A (Tc)	10V	4V @ 250µA	130.6 nC @ 10 V	8306 pF @ 30 V	±20V	-	2.7W (Ta), 139W (Tc)	1.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8 (SWP)	8-PowerTDFN