Page 1038 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFZ24NSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock33,600
IRFSL33N15DTRRP
Infineon Technologies

MOSFET N-CH 150V 33A TO-262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,344
IRFR2407TR
Infineon Technologies

MOSFET N-CH 75V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,376
AOI4T60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock7,136
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 800V 3A TO220SM

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,432
ZVNL120ASTOB
Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

Package: E-Line-3

Stock7,392
BS107PSTOA
Diodes Incorporated

MOSFET N-CH 200V 0.12A TO92-3

Package: E-Line-3

Stock7,536
NTD30N02T4
ON Semiconductor

MOSFET N-CH 24V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960
IRL540STRL
Vishay Siliconix

MOSFET N-CH 100V 28A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,216
STP45NE06
STMicroelectronics

MOSFET N-CH 60V 45A TO-220

Package: TO-220-3

Stock16,560
IPW80R290C3AFKSA1
Infineon Technologies

MOSFET N-CH 800V TO247

Package: -

Stock6,160
IPA65R095C7XKSA1
Infineon Technologies

MOSFET N-CH 650V TO220-3

Package: TO-220-3 Full Pack

Stock5,984
IPB80N03S4L02ATMA1
Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,624
NVD6828NLT4G-VF01
ON Semiconductor

MOSFET N-CH 90V 38A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,200
SSM3K35AMFV,L3F
Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE MOSFET

Package: -

Stock6,048
PSMN1R7-25YLDX
Nexperia USA Inc.

PSMN1R7-25YLD/LFPAK/REEL 7 Q1

Package: SC-100, SOT-669

Stock6,848
VN2450N3-G
Microchip Technology

MOSFET N-CH 500V 0.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,984
BUK7Y20-30B,115
Nexperia USA Inc.

MOSFET N-CH 30V 39.5A LFPAK

Package: SC-100, SOT-669

Stock4,096
IXTA36P15P
IXYS

MOSFET P-CH 150V 36A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,044
SQ2362ES-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 4.4A TO236

Package: TO-236-3, SC-59, SOT-23-3

Stock25,206

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFZ24NSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock33,600	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	370pF @ 25V	±20V	-	3.8W (Ta), 45W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFSL33N15DTRRP	Infineon Technologies	MOSFET N-CH 150V 33A TO-262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,344	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5.5V @ 250µA	90nC @ 10V	2020pF @ 25V	±30V	-	3.8W (Ta), 170W (Tc)	56 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR2407TR	Infineon Technologies	MOSFET N-CH 75V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,376	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	110W (Tc)	26 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOI4T60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 4A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,136	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	15nC @ 10V	460pF @ 100V	±30V	-	83W (Tc)	2.1 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
2SK2883(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 3A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,432	MOSFET (Metal Oxide)	800V	3A (Ta)	10V	4V @ 1mA	25nC @ 10V	750pF @ 25V	±30V	-	75W (Tc)	3.6 Ohm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TO-220SM	TO-252-3, DPak (2 Leads + Tab), SC-63
ZVNL120ASTOB	Diodes Incorporated	MOSFET N-CH 200V 0.18A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,392	MOSFET (Metal Oxide)	200V	180mA (Ta)	3V, 5V	1.5V @ 1mA	-	85pF @ 25V	±20V	-	700mW (Ta)	10 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
BS107PSTOA	Diodes Incorporated	MOSFET N-CH 200V 0.12A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,536	MOSFET (Metal Oxide)	200V	120mA (Ta)	2.6V, 5V	-	-	-	±20V	-	500mW (Ta)	30 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
NTD30N02T4	ON Semiconductor	MOSFET N-CH 24V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	24V	30A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 4.5V	1000pF @ 20V	±20V	-	75W (Tj)	14.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL540STRL	Vishay Siliconix	MOSFET N-CH 100V 28A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,216	MOSFET (Metal Oxide)	100V	28A (Tc)	4V, 5V	2V @ 250µA	64nC @ 5V	2200pF @ 25V	±10V	-	3.7W (Ta), 150W (Tc)	77 mOhm @ 17A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP45NE06	STMicroelectronics	MOSFET N-CH 60V 45A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock16,560	MOSFET (Metal Oxide)	60V	45A (Tc)	10V	4V @ 250µA	80nC @ 10V	3600pF @ 25V	±20V	-	100W (Tc)	28 mOhm @ 22.5A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
IPW80R290C3AFKSA1	Infineon Technologies	MOSFET N-CH 800V TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,160	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,984	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	34W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPB80N03S4L02ATMA1	Infineon Technologies	MOSFET N-CH 30V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,624	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.2V @ 90µA	140nC @ 10V	9750pF @ 25V	±16V	-	136W (Tc)	2.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVD6828NLT4G-VF01	ON Semiconductor	MOSFET N-CH 90V 38A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,200	MOSFET (Metal Oxide)	90V	8.7A (Ta), 41A (Tc)	4.5V, 10V	2.5V @ 250µA	61nC @ 10V	2900pF @ 25V	±20V	-	3.8W (Ta), 83W (Tc)	20 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3K35AMFV,L3F	Toshiba Semiconductor and Storage	SMALL LOW ON RESISTANCE MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: -	Package: -	Stock6,048	MOSFET (Metal Oxide)	20V	250mA (Ta)	1.2V, 4.5V	1V @ 100µA	0.34nC @ 4.5V	36pF @ 10V	±10V	-	500mW (Ta)	1.1 Ohm @ 150mA, 4.5V	150°C (TJ)	Surface Mount	SOT-723	-
PSMN1R7-25YLDX	Nexperia USA Inc.	PSMN1R7-25YLD/LFPAK/REEL 7 Q1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3415pF @ 12V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,848	MOSFET (Metal Oxide)	25V	100A	4.5V, 10V	2.2V @ 1mA	46.7nC @ 10V	3415pF @ 12V	±20V	Schottky Diode (Body)	135W (Tc)	1.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
VN2450N3-G	Microchip Technology	MOSFET N-CH 500V 0.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,984	MOSFET (Metal Oxide)	500V	200mA (Tj)	4.5V, 10V	4V @ 1mA	-	150pF @ 25V	±20V	-	1W (Ta)	13 Ohm @ 400mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BUK7Y20-30B,115	Nexperia USA Inc.	MOSFET N-CH 30V 39.5A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 39.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 688pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,096	MOSFET (Metal Oxide)	30V	39.5A (Tc)	10V	4V @ 1mA	11.2nC @ 10V	688pF @ 25V	±20V	-	59W (Tc)	20 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IXTA36P15P	IXYS	MOSFET P-CH 150V 36A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,044	MOSFET (Metal Oxide)	150V	36A (Tc)	10V	4.5V @ 250µA	55nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQ2362ES-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 4.4A TO236 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock25,206	MOSFET (Metal Oxide)	60V	4.3A (Tc)	10V	2.5V @ 250µA	12nC @ 10V	550pF @ 30V	±20V	-	3W (Tc)	95 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2301BDS-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 2.2A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,796,380	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4.5V	950mV @ 250µA	10nC @ 4.5V	375pF @ 6V	±8V	-	700mW (Ta)	100 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2SK3230-T1-A	Renesas Electronics Corporation	SMALL SIGNAL FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STU7N65M6	STMicroelectronics	MOSFET N-CH 650V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	5A (Tc)	10V	3.75V @ 250µA	6.9 nC @ 10 V	220 pF @ 100 V	±25V	-	60W (Tc)	990mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPak, TO-251AA
TSM025NB04LCR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 24A/161A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5.2x5.75) Package / Case: 8-PowerLDFN	Package: -	Stock816	MOSFET (Metal Oxide)	40 V	24A (Ta), 161A (Tc)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	6435 pF @ 20 V	±20V	-	3.1W (Ta), 136W (Tc)	2.5mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5.2x5.75)	8-PowerLDFN
SL01N65-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.6W (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	1A (Ta)	10V	4V @ 250µA	3 nC @ 10 V	34 pF @ 300 V	±30V	-	1.6W (Tj)	11Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
FS25SM-9A-B10	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJD75N04V-AU_L2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 181A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4691 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	28.2A (Ta), 181A (Tc)	7V, 10V	3.5V @ 50µA	63 nC @ 10 V	4691 pF @ 25 V	±20V	-	3W (Ta), 125W (Tc)	2.1mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB034N06N3G	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 93µA	130 nC @ 10 V	11000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)