Page 1036 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

2SK3707
ON Semiconductor

MOSFET N-CH 100V 20A TO-220ML

Package: TO-220-3 Full Pack

Stock19,308
SI1054X-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 1.32A SC89-6

Package: SOT-563, SOT-666

Stock36,000
FDS8812NZ
Fairchild/ON Semiconductor

MOSFET N-CH 30V 20A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock33,240
NTP90N02G
ON Semiconductor

MOSFET N-CH 24V 90A TO220AB

Package: TO-220-3

Stock390,216
MTP3055VL
ON Semiconductor

MOSFET N-CH 60V 12A TO-220AB

Package: TO-220-3

Stock186,036
APT5014SLLG
Microsemi Corporation

MOSFET N-CH 500V 35A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,000
IXFR24N80P
IXYS

MOSFET N-CH 800V 13A ISOPLUS247

Package: ISOPLUS247?

Stock7,568
VN2410L-G-P013
Microchip Technology

MOSFET N-CH 240V 0.19A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,672
SQD30N05-20L_GE3
Vishay Siliconix

MOSFET N-CH 55V 30A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,560
GKI04076
Sanken

MOSFET N-CH 40V 11A 8DFN

Package: 8-PowerTDFN

Stock4,048
IRF520PBF
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-220AB

Package: TO-220-3

Stock128,460
STP45N65M5
STMicroelectronics

MOSFET N-CH 650V 35A TO220

Package: TO-220-3

Stock4,016
IRF40R207
Infineon Technologies

MOSFET N-CH 40V 56A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock103,464
SI1012X-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 500MA SC89-3

Package: SC-89, SOT-490

Stock1,540,212
IRFM120ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.3A SOT-223

Package: TO-261-4, TO-261AA

Stock136,572
ZXMN10A07FTA
Diodes Incorporated

MOSFET N-CH 100V 700MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,582,668
IPP111N15N3GXKSA1
Infineon Technologies

MOSFET N-CH 150V 83A TO220-3

Package: -

Stock12,072
FDN360P-NL-ML
MOSLEADER

P-Channel -30V -2A SOT-23-3

Package: -

Request a Quote
FCU360N65S3R0
onsemi

MOSFET N-CH 600V IPAK

Package: -

Stock4,605
IPB60R950C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 4.4A D2PAK

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SK3707	ON Semiconductor	MOSFET N-CH 100V 20A TO-220ML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,308	MOSFET (Metal Oxide)	100V	20A (Ta)	4V, 10V	-	44nC @ 10V	2150pF @ 20V	±20V	-	2W (Ta), 25W (Tc)	60 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220ML	TO-220-3 Full Pack
SI1054X-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 1.32A SC89-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock36,000	MOSFET (Metal Oxide)	12V	-	1.8V, 4.5V	1V @ 250µA	8.57nC @ 5V	480pF @ 6V	±8V	-	236mW (Ta)	95 mOhm @ 1.32A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
FDS8812NZ	Fairchild/ON Semiconductor	MOSFET N-CH 30V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6925pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock33,240	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	3V @ 250µA	126nC @ 10V	6925pF @ 15V	±20V	-	2.5W (Ta)	4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTP90N02G	ON Semiconductor	MOSFET N-CH 24V 90A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,216	MOSFET (Metal Oxide)	24V	90A (Ta)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2120pF @ 20V	±20V	-	85W (Tc)	5.8 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP3055VL	ON Semiconductor	MOSFET N-CH 60V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock186,036	MOSFET (Metal Oxide)	60V	12A (Tc)	5V	4V @ 250µA	10nC @ 5V	570pF @ 25V	±15V	-	48W (Tc)	180 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT5014SLLG	Microsemi Corporation	MOSFET N-CH 500V 35A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3 [S] Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,000	MOSFET (Metal Oxide)	500V	35A (Tc)	10V	5V @ 1mA	72nC @ 10V	3261pF @ 25V	±30V	-	403W (Tc)	140 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3 [S]	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFR24N80P	IXYS	MOSFET N-CH 800V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,568	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	5V @ 4mA	105nC @ 10V	7200pF @ 25V	±30V	-	208W (Tc)	420 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
VN2410L-G-P013	Microchip Technology	MOSFET N-CH 240V 0.19A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,672	MOSFET (Metal Oxide)	240V	190mA (Tj)	2.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1W (Tc)	10 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SQD30N05-20L_GE3	Vishay Siliconix	MOSFET N-CH 55V 30A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,560	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	18nC @ 5V	1175pF @ 25V	±20V	-	50W (Tc)	20 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
GKI04076	Sanken	MOSFET N-CH 40V 11A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 24.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 23.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,048	MOSFET (Metal Oxide)	40V	11A (Ta)	4.5V, 10V	2.5V @ 350µA	24.9nC @ 10V	1470pF @ 25V	±20V	-	3.1W (Ta), 46W (Tc)	8.3 mOhm @ 23.3A, 10V	150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerTDFN
IRF520PBF	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock128,460	MOSFET (Metal Oxide)	100V	9.2A (Tc)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	60W (Tc)	270 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP45N65M5	STMicroelectronics	MOSFET N-CH 650V 35A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 19.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,016	MOSFET (Metal Oxide)	650V	35A (Tc)	10V	5V @ 250µA	91nC @ 10V	3375pF @ 100V	±25V	-	210W (Tc)	78 mOhm @ 19.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
IRF40R207	Infineon Technologies	MOSFET N-CH 40V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock103,464	MOSFET (Metal Oxide)	40V	56A (Tc)	6V, 10V	3.9V @ 50µA	68nC @ 10V	2110pF @ 25V	±20V	-	83W (Tc)	5.1 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI1012X-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 500MA SC89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock1,540,212	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.8V, 4.5V	900mV @ 250µA	0.75nC @ 4.5V	-	±6V	-	250mW (Ta)	700 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
IRFM120ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 2.3A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock136,572	MOSFET (Metal Oxide)	100V	2.3A (Ta)	10V	4V @ 250µA	22nC @ 10V	480pF @ 25V	±20V	-	2.4W (Ta)	200 mOhm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
ZXMN10A07FTA	Diodes Incorporated	MOSFET N-CH 100V 700MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,582,668	MOSFET (Metal Oxide)	100V	700mA (Ta)	6V, 10V	4V @ 250µA	2.9nC @ 10V	138pF @ 50V	±20V	-	625mW (Ta)	700 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPP111N15N3GXKSA1	Infineon Technologies	MOSFET N-CH 150V 83A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock12,072	MOSFET (Metal Oxide)	150 V	83A (Tc)	8V, 10V	4V @ 160µA	55 nC @ 10 V	3230 pF @ 75 V	±20V	-	214W (Tc)	11.1mOhm @ 83A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
FDN360P-NL-ML	MOSLEADER	P-Channel -30V -2A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCU360N65S3R0	onsemi	MOSFET N-CH 600V IPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Stock4,605	-	-	10A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	IPAK	TO-251-3 Stub Leads, IPAK
IPB60R950C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 4.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.4A (Tc)	10V	3.5V @ 130µA	13 nC @ 10 V	280 pF @ 100 V	±20V	-	37W (Tc)	950mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ISZ330N12LM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	120 V	5.7A (Ta), 24A (Tc)	3.3V, 10V	2.2V @ 11µA	9 nC @ 10 V	650 pF @ 60 V	±20V	-	2.5W (Ta), 43W (Tc)	33mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8 FL	8-PowerTDFN
DMT6012LFV-7	Diodes Incorporated	MOSFET N-CH 60V 43.3A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.95W (Ta), 33.78W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	43.3A (Tc)	4.5V, 10V	2.5V @ 250µA	22.2 nC @ 10 V	1522 pF @ 30 V	±20V	-	1.95W (Ta), 33.78W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
PH6030DLV-CBSNX	Nexperia USA Inc.	MOSFET N-CH 30V LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ106N12LM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	10A (Ta), 62A (Tc)	3.3V, 10V	2.2V @ 35µA	26 nC @ 10 V	1800 pF @ 60 V	±20V	-	2.5W (Ta), 94W (Tc)	10.6mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8 FL	8-PowerTDFN
IQE046N08LM5ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 47µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-5 Package / Case: 8-PowerTDFN	Package: -	Stock12,555	MOSFET (Metal Oxide)	80 V	15.6A (Ta), 99A (Tc)	4.5V, 10V	2.3V @ 47µA	38 nC @ 10 V	3250 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	4.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-5	8-PowerTDFN
PSMN1R5-25MLHX	Nexperia USA Inc.	MOSFET N-CH 25V 150A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3167 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Ta) Rds On (Max) @ Id, Vgs: 1.81mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock137,661	MOSFET (Metal Oxide)	25 V	150A (Ta)	4.5V, 10V	2.2V @ 1mA	58 nC @ 10 V	3167 pF @ 12 V	±20V	-	106W (Ta)	1.81mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
MCG65N03-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 65A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4498 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Stock29,538	MOSFET (Metal Oxide)	30 V	65A	4.5V, 10V	2.5V @ 250µA	92.7 nC @ 10 V	4498 pF @ 15 V	±20V	-	75W (Tj)	3.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
BUK6D43-40PX	Nexperia USA Inc.	MOSFET P-CH 40V 6A DFN2020MD-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock53,976	MOSFET (Metal Oxide)	40 V	6A (Ta)	4.5V, 10V	2.7V @ 250µA	36 nC @ 10 V	1260 pF @ 20 V	±20V	-	15W (Tc)	43mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad