Page 1035 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP16CN10LGXKSA1
Infineon Technologies

MOSFET N-CH 100V 54A TO220-3

Package: TO-220-3

Stock6,080
IRLZ24NLPBF
Infineon Technologies

MOSFET N-CH 55V 18A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,720
AO4449L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,656
AOD492
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,336
IXTY64N055T
IXYS

MOSFET N-CH 55V 64A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock631,824
STP4NK50Z
STMicroelectronics

MOSFET N-CH 500V 3A TO-220

Package: TO-220-3

Stock17,340
IPB80P04P405ATMA1
Infineon Technologies

MOSFET P-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,672
IRLR3717TRRPBF
Infineon Technologies

MOSFET N-CH 20V 120A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,760
IXFH23N60Q
IXYS

MOSFET N-CH 600V 23A TO-247

Package: TO-247-3

Stock6,912
HAT2165H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 55A LFPAK

Package: SC-100, SOT-669

Stock274,104
DMP25H18DLFDE-13
Diodes Incorporated

MOSFET P-CH 250V 0.26A DFN2020-6

Package: 6-UDFN Exposed Pad

Stock5,824
SSM3K361R,LF
Toshiba Semiconductor and Storage

SMALL-SIGNAL NCH MOSFET SOT23F Q

Package: SOT-23-3 Flat Leads

Stock6,304
IXFP20N50P3M
IXYS

MOSFET N-CH 500V 8A TO-220

Package: TO-220-3

Stock4,896
IRL640PBF
Vishay Siliconix

MOSFET N-CH 200V 17A TO-220AB

Package: TO-220-3

Stock5,984
IRLHS6342TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.7A PQFN

Package: 6-PowerVDFN

Stock74,274
SIS407ADN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 18A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock163,074
ZXMN6A08GTA
Diodes Incorporated

MOSFET N-CH 60V 3.8A SOT223

Package: TO-261-4, TO-261AA

Stock1,068,936
GT100N04K
Goford Semiconductor

N40V,50A,RD<10M@10V,VTH1.2V~2.2V

Package: -

Request a Quote
SSFD20N24
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 24.00A, 20

Package: -

Stock13,389
AO3402L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 4A SOT23-3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP16CN10LGXKSA1	Infineon Technologies	MOSFET N-CH 100V 54A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4190pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,080	MOSFET (Metal Oxide)	100V	54A (Tc)	10V	2.4V @ 61µA	44nC @ 10V	4190pF @ 50V	±20V	-	100W (Tc)	15.7 mOhm @ 54A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRLZ24NLPBF	Infineon Technologies	MOSFET N-CH 55V 18A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,720	MOSFET (Metal Oxide)	55V	18A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	3.8W (Ta), 45W (Tc)	60 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AO4449L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 7A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,656	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2.4V @ 250µA	16nC @ 10V	910pF @ 15V	±20V	-	3.1W (Ta)	34 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOD492	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 85A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4512pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,336	MOSFET (Metal Oxide)	30V	85A (Tc)	4.5V, 10V	2.2V @ 250µA	74nC @ 10V	4512pF @ 15V	±20V	Schottky Diode (Body)	2.5W (Ta), 100W (Tc)	4.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY64N055T	IXYS	MOSFET N-CH 55V 64A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock631,824	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 25µA	37nC @ 10V	1420pF @ 25V	±20V	-	130W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
STP4NK50Z	STMicroelectronics	MOSFET N-CH 500V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,340	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	310pF @ 25V	±30V	-	45W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB80P04P405ATMA1	Infineon Technologies	MOSFET P-CH TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,672	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	151nC @ 10V	10300pF @ 25V	±20V	-	125W (Tc)	4.9 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR3717TRRPBF	Infineon Technologies	MOSFET N-CH 20V 120A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,760	MOSFET (Metal Oxide)	20V	120A (Tc)	4.5V, 10V	2.45V @ 250µA	31nC @ 4.5V	2830pF @ 10V	±20V	-	89W (Tc)	4 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFH23N60Q	IXYS	MOSFET N-CH 600V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,912	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	3300pF @ 25V	±30V	-	400W (Tc)	320 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
HAT2165H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 55A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock274,104	MOSFET (Metal Oxide)	30V	55A (Ta)	4.5V, 10V	2.5V @ 1mA	33nC @ 4.5V	5180pF @ 10V	±20V	-	30W (Tc)	3.3 mOhm @ 27.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
DMP25H18DLFDE-13	Diodes Incorporated	MOSFET P-CH 250V 0.26A DFN2020-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,824	MOSFET (Metal Oxide)	250V	260mA (Ta)	3.5V, 10V	2.5V @ 1mA	2.8nC @ 10V	81pF @ 25V	±40V	-	600mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
SSM3K361R,LF	Toshiba Semiconductor and Storage	SMALL-SIGNAL NCH MOSFET SOT23F Q FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock6,304	MOSFET (Metal Oxide)	100V	3.5A (Ta)	4.5V, 10V	2.5V @ 100µA	3.2nC @ 4.5V	430pF @ 15V	±20V	-	1.2W (Ta)	69 mOhm @ 2A, 10V	175°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IXFP20N50P3M	IXYS	MOSFET N-CH 500V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,896	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 1.5mA	36nC @ 10V	1800pF @ 25V	±30V	-	58W (Tc)	300 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL640PBF	Vishay Siliconix	MOSFET N-CH 200V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,984	MOSFET (Metal Oxide)	200V	17A (Tc)	4V, 5V	2V @ 250µA	66nC @ 5V	1800pF @ 25V	±10V	-	125W (Tc)	180 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLHS6342TRPBF	Infineon Technologies	MOSFET N-CH 30V 8.7A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	Package: 6-PowerVDFN	Stock74,274	MOSFET (Metal Oxide)	30V	8.7A (Ta), 19A (Tc)	2.5V, 4.5V	1.1V @ 10µA	11nC @ 4.5V	1019pF @ 25V	±12V	-	2.1W (Ta)	15.5 mOhm @ 8.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-PQFN (2x2)	6-PowerVDFN
SIS407ADN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 18A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock163,074	MOSFET (Metal Oxide)	20V	18A (Tc)	1.8V, 4.5V	1V @ 250µA	168nC @ 8V	5875pF @ 10V	±8V	-	3.7W (Ta), 39.1W (Tc)	9 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
ZXMN6A08GTA	Diodes Incorporated	MOSFET N-CH 60V 3.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,068,936	MOSFET (Metal Oxide)	60V	3.8A (Ta)	4.5V, 10V	1V @ 250µA	5.8nC @ 10V	459pF @ 40V	±20V	-	2W (Ta)	80 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
GT100N04K	Goford Semiconductor	N40V,50A,RD<10M@10V,VTH1.2V~2.2V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	32 nC @ 10 V	644 pF @ 20 V	±20V	-	80W (Tc)	10mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SSFD20N24	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 24.00A, 20 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,389	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	2.5V @ 250µA	60 nC @ 10 V	4200 pF @ 25 V	±20V	-	150W (Tc)	80mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AO3402L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 4A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 10V	1.4V @ 250µA	4.34 nC @ 4.5 V	390 pF @ 15 V	±12V	-	1.4W (Ta)	55mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
SIR624DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 200V 5.7A/18.6A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	5.7A (Ta), 18.6A (Tc)	7.5V, 10V	4V @ 250µA	30 nC @ 10 V	1110 pF @ 100 V	±20V	-	5W (Ta), 52W (Tc)	60mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
XPQ1R004PB-LXHQ	Toshiba Semiconductor and Storage	40V U-MOS IX-H L-TOGL 1.0MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: L-TOGL™ Package / Case: 8-PowerBSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Ta)	6V, 10V	3V @ 500µA	84 nC @ 10 V	6890 pF @ 10 V	±20V	-	230W (Tc)	1mOhm @ 100A, 10V	175°C	Surface Mount	L-TOGL™	8-PowerBSFN
AONS36346	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 26.5A/60A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	26.5A (Ta), 60A (Tc)	4.5V, 10V	2.1V @ 250µA	20 nC @ 10 V	800 pF @ 15 V	±20V	-	6.2W (Ta), 31W (Tc)	5.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IPB60R190C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 20.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,280	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	3.5V @ 630µA	63 nC @ 10 V	1400 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP040N06NXKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	6V, 10V	3.3V @ 50µA	44 nC @ 10 V	3375 pF @ 30 V	±20V	-	3W (Ta), 107W (Tc)	4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
FBG10N30BSH	EPC Space, LLC	GAN FET HEMT 100V 30A 4FSMD-B FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-SMD Package / Case: 4-SMD, No Lead	Package: -	Stock120	GaNFET (Gallium Nitride)	100 V	30A (Tc)	5V	2.5V @ 5mA	11 nC @ 5 V	1000 pF @ 50 V	+6V, -4V	-	-	12mOhm @ 30A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead
EPC2031	EPC	GANFET NCH 60V 31A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock43,305	GaNFET (Gallium Nitride)	60 V	31A (Ta)	-	2.5V @ 15mA	17 nC @ 5 V	1800 pF @ 300 V	-	-	-	2.6mOhm @ 30A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2023	EPC	GANFET N-CH 30V 60A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock23,049	GaNFET (Gallium Nitride)	30 V	60A (Ta)	-	2.5V @ 20mA	-	2300 pF @ 15 V	-	-	-	1.3mOhm @ 40A, 5V	-	Surface Mount	Die	Die