Page 1042 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC4310EF
Infineon Technologies

MOSFET N-CH 100V DIE ON FILM

Package: -

Stock3,424
IPB06CN10N G
Infineon Technologies

MOSFET N-CH 100V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,704
FQA24N50_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 24A TO-3PN

Package: TO-3P-3, SC-65-3

Stock6,848
NTTFS4824NTWG
ON Semiconductor

MOSFET N-CH 30V 8.3A 8WDFN

Package: 8-PowerWDFN

Stock4,432
STW25NM60N
STMicroelectronics

MOSFET N-CH 600V 21A TO-247

Package: TO-247-3

Stock65,940
IPB60R180C7ATMA1
Infineon Technologies

MOSFET N-CH 600V TO263-3

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock5,216
IXFT26N60P
IXYS

MOSFET N-CH 600V 26A TO-268 D3

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,304
IXTA32P20T
IXYS

MOSFET P-CH 200V 32A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,260
IXFP3N80
IXYS

MOSFET N-CH 800V 3.6A TO-220

Package: TO-220-3

Stock5,984
IXTP230N075T2
IXYS

MOSFET N-CH 75V 230A TO-220

Package: TO-220-3

Stock42,960
RJK0451DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 35A LFPAK

Package: SC-100, SOT-669

Stock4,752
SQ3410EV-T1_GE3
Vishay Siliconix

MOSFET N-CH 30V 8A TSOP-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,424
NTMFS4939NT3G
ON Semiconductor

MOSFET N-CH 30V 9.3A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,400
SI1022R-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 330MA SC-75A

Package: SC-75A

Stock500,112
IXTX1R4N450HV
IXYS

2500V TO 4500V VERY HI VOLT PWR

Package: TO-247-3 Variant

Stock5,056
APT56F50B2
Microsemi Corporation

MOSFET N-CH 500V 56A TO-247

Package: TO-247-3 Variant

Stock5,280
IRLML9303TRPBF
Infineon Technologies

MOSFET P-CH 30V 2.3A SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,524,612
IPD053N08N3GATMA1
Infineon Technologies

MOSFET N-CH 80V 90A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,852
AO6400
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 6.9A 6-TSOP

Package: SC-74, SOT-457

Stock591,900
PMF170XP,115
Nexperia USA Inc.

MOSFET P-CH 20V 1A SOT323

Package: SC-70, SOT-323

Stock138,720

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC4310EF	Infineon Technologies	MOSFET N-CH 100V DIE ON FILM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,424	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB06CN10N G	Infineon Technologies	MOSFET N-CH 100V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,704	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 180µA	139nC @ 10V	9200pF @ 50V	±20V	-	214W (Tc)	6.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQA24N50_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 24A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,848	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	5V @ 250µA	120nC @ 10V	4500pF @ 25V	±30V	-	290W (Tc)	200 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
NTTFS4824NTWG	ON Semiconductor	MOSFET N-CH 30V 8.3A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2363pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta), 46.3W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,432	MOSFET (Metal Oxide)	30V	8.3A (Ta), 69A (Tc)	4.5V, 11.5V	2.5V @ 250µA	29nC @ 11.5V	2363pF @ 12V	±20V	-	660mW (Ta), 46.3W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
STW25NM60N	STMicroelectronics	MOSFET N-CH 600V 21A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock65,940	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2400pF @ 50V	±25V	-	160W (Tc)	160 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPB60R180C7ATMA1	Infineon Technologies	MOSFET N-CH 600V TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock5,216	MOSFET (Metal Oxide)	650V	13A (Tc)	10V	4V @ 260µA	24nC @ 10V	1080pF @ 400V	±20V	-	68W (Tc)	130 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
IXFT26N60P	IXYS	MOSFET N-CH 600V 26A TO-268 D3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,304	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	5V @ 4mA	72nC @ 10V	4150pF @ 25V	±30V	-	460W (Tc)	270 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTA32P20T	IXYS	MOSFET P-CH 200V 32A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,260	MOSFET (Metal Oxide)	200V	32A (Tc)	10V	4V @ 250µA	185nC @ 10V	14500pF @ 25V	±15V	-	300W (Tc)	130 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFP3N80	IXYS	MOSFET N-CH 800V 3.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,984	MOSFET (Metal Oxide)	800V	3.6A (Tc)	10V	4.5V @ 1mA	24nC @ 10V	685pF @ 25V	±20V	-	100W (Tc)	3.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP230N075T2	IXYS	MOSFET N-CH 75V 230A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock42,960	MOSFET (Metal Oxide)	75V	230A (Tc)	10V	4V @ 250µA	178nC @ 10V	10500pF @ 25V	±20V	-	480W (Tc)	4.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RJK0451DPB-00#J5	Renesas Electronics America	MOSFET N-CH 40V 35A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,752	MOSFET (Metal Oxide)	40V	35A (Ta)	4.5V, 10V	-	14nC @ 4.5V	2010pF @ 10V	±20V	-	45W (Tc)	7 mOhm @ 17.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
SQ3410EV-T1_GE3	Vishay Siliconix	MOSFET N-CH 30V 8A TSOP-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1005pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,424	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 10V	1005pF @ 15V	±20V	-	5W (Tc)	17.5 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
NTMFS4939NT3G	ON Semiconductor	MOSFET N-CH 30V 9.3A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,400	MOSFET (Metal Oxide)	30V	9.3A (Ta), 53A (Tc)	4.5V, 10V	2.2V @ 250µA	28.5nC @ 10V	1954pF @ 15V	±20V	-	920mW (Ta), 30W (Tc)	5.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SI1022R-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 330MA SC-75A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	Package: SC-75A	Stock500,112	MOSFET (Metal Oxide)	60V	330mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.6nC @ 4.5V	30pF @ 25V	±20V	-	250mW (Ta)	1.25 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75A	SC-75A
IXTX1R4N450HV	IXYS	2500V TO 4500V VERY HI VOLT PWR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 40 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,056	MOSFET (Metal Oxide)	4500V	1.4A (Tc)	10V	6V @ 250µA	88nC @ 10V	3300pF @ 25V	±20V	-	960W (Tc)	40 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
APT56F50B2	Microsemi Corporation	MOSFET N-CH 500V 56A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,280	MOSFET (Metal Oxide)	500V	56A (Tc)	10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	±30V	-	780W (Tc)	100 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
IRLML9303TRPBF	Infineon Technologies	MOSFET P-CH 30V 2.3A SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 165 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,524,612	MOSFET (Metal Oxide)	30V	2.3A (Ta)	4.5V, 10V	2.4V @ 10µA	2nC @ 4.5V	160pF @ 25V	±20V	-	1.25W (Ta)	165 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
IPD053N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,852	MOSFET (Metal Oxide)	80V	90A (Tc)	6V, 10V	3.5V @ 90µA	69nC @ 10V	4750pF @ 40V	±20V	-	150W (Tc)	5.3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AO6400	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 6.9A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock591,900	MOSFET (Metal Oxide)	30V	6.9A (Ta)	2.5V, 10V	1.4V @ 250µA	12nC @ 4.5V	1030pF @ 15V	±12V	-	2W (Ta)	28 mOhm @ 6.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PMF170XP,115	Nexperia USA Inc.	MOSFET P-CH 20V 1A SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 290mW (Ta), 1.67W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock138,720	MOSFET (Metal Oxide)	20V	1A (Ta)	4.5V	1.15V @ 250µA	3.9nC @ 4.5V	280pF @ 10V	±12V	-	290mW (Ta), 1.67W (Tc)	200 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
R6535ENZC17	Rohm Semiconductor	MOSFET N-CH 650V 35A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	35A (Tc)	10V	4V @ 1.21mA	110 nC @ 10 V	2600 pF @ 25 V	±20V	-	102W (Tc)	115mOhm @ 18.1A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
MTB9N25ET4	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ243-0-T1-A	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF9640S2497	Harris Corporation	11A, 200V, 0.500 OHM, P-CHANNEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP2P10	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2A (Tc)	10V	4V @ 1mA	-	150 pF @ 25 V	±20V	-	25W (Tc)	3.5Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPB60R099P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 31A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 117W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	4V @ 530µA	45 nC @ 10 V	1952 pF @ 400 V	±20V	-	117W (Tc)	99mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC883N03MSG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	34 V	19A (Ta), 98A (Tc)	4.5V, 10V	2V @ 250µA	41 nC @ 10 V	3200 pF @ 15 V	±20V	-	2.5W (Ta), 57W (Tc)	3.8mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
SQJ170ELP-T1_GE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock19,302	MOSFET (Metal Oxide)	60 V	63A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	1165 pF @ 25 V	±20V	-	136W (Tc)	16.3mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8