Page 1043 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

2SJ665-DL-1EX
ON Semiconductor

MOSFET P-CH 100V 27A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,008
2N6796
Microsemi Corporation

MOSFET N-CH 100V TO-205AF TO-39

Package: TO-205AF Metal Can

Stock4,640
SUP36N20-54P-E3
Vishay Siliconix

MOSFET N-CH 200V 36A TO220AB

Package: TO-220-3

Stock3,120
FDU6680
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock23,676
MTM867270LBF
Panasonic Electronic Components

MOSFET N-CH 20V 2.2A WSSMINI6

Package: 6-SMD, Flat Leads

Stock6,320
NTD12N10G
ON Semiconductor

MOSFET N-CH 100V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,508
IRFBE20L
Vishay Siliconix

MOSFET N-CH 800V 1.8A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,896
IRFR1205TRLPBF
Infineon Technologies

MOSFET N-CH 55V 44A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock57,600
AOW284
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 15A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,208
AOT11C60PL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: TO-220-3

Stock3,136
TSM9N90ECZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3

Stock3,216
IPB180N04S401ATMA1
Infineon Technologies

MOSFET N-CH 40V 180A TO263-7-3

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,440
PMN27XPE,115
Nexperia USA Inc.

MOSFET P-CH 20V 4.4A 6TSOP

Package: SC-74, SOT-457

Stock148,200
IPA60R380P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220FP-3

Package: TO-220-3 Full Pack

Stock19,320
IPS70R2K0CEAKMA1
Infineon Technologies

MOSFET NCH 700V 4A TO251

Package: TO-251-3 Stub Leads, IPak

Stock8,748
DMTH4005SPSQ-13
Diodes Incorporated

MOSFET N-CH POWERDI5060-8

Package: 8-PowerTDFN

Stock4,544
QS5U12TR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock7,856
IRFB4310PBF
Infineon Technologies

MOSFET N-CH 100V 130A TO-220AB

Package: TO-220-3

Stock3,840
NP50P04SLG-E1-AY
Renesas Electronics Corporation

MP-3ZK

Package: -

Stock11,895
MCU30P06Y-TP
Micro Commercial Co

P-CHANNEL MOSFET, DPAK

Package: -

Stock37,734

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SJ665-DL-1EX	ON Semiconductor	MOSFET P-CH 100V 27A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,008	MOSFET (Metal Oxide)	100V	27A (Ta)	4V, 10V	-	74nC @ 10V	4200pF @ 20V	±20V	-	65W (Tc)	77 mOhm @ 14A, 10V	150°C (TA)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2N6796	Microsemi Corporation	MOSFET N-CH 100V TO-205AF TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock4,640	MOSFET (Metal Oxide)	100V	8A (Tc)	10V	4V @ 250mA	6.34nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	180 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
SUP36N20-54P-E3	Vishay Siliconix	MOSFET N-CH 200V 36A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.12W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,120	MOSFET (Metal Oxide)	200V	36A (Tc)	10V, 15V	4.5V @ 250µA	127nC @ 15V	3100pF @ 25V	±25V	-	3.12W (Ta), 166W (Tc)	53 mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDU6680	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock23,676	MOSFET (Metal Oxide)	30V	12A (Ta), 46A (Tc)	4.5V, 10V	3V @ 250µA	18nC @ 5V	1230pF @ 15V	±20V	-	3.3W (Ta), 56W (Tc)	10 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
MTM867270LBF	Panasonic Electronic Components	MOSFET N-CH 20V 2.2A WSSMINI6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock6,320	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4V	1.3V @ 1mA	-	280pF @ 10V	±10V	-	540mW (Ta)	105 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	WSSMini6-F1	6-SMD, Flat Leads
NTD12N10G	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,508	MOSFET (Metal Oxide)	100V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	165 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFBE20L	Vishay Siliconix	MOSFET N-CH 800V 1.8A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,896	MOSFET (Metal Oxide)	800V	1.8A (Tc)	10V	4V @ 250µA	38nC @ 10V	530pF @ 25V	±20V	-	-	6.5 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR1205TRLPBF	Infineon Technologies	MOSFET N-CH 55V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock57,600	MOSFET (Metal Oxide)	55V	44A (Tc)	10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	±20V	-	107W (Tc)	27 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOW284	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 80V 15A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5154pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,208	MOSFET (Metal Oxide)	80V	15A (Ta), 105A (Tc)	6V, 10V	3.3V @ 250µA	100nC @ 10V	5154pF @ 40V	±20V	-	1.9W (Ta), 250W (Tc)	4.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AOT11C60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,136	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	50nC @ 10V	2333pF @ 100V	±30V	-	298W (Tc)	420 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TSM9N90ECZ C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,216	MOSFET (Metal Oxide)	900V	9A (Tc)	10V	4V @ 250µA	72nC @ 10V	2470pF @ 25V	±30V	-	89W (Tc)	1.4 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IPB180N04S401ATMA1	Infineon Technologies	MOSFET N-CH 40V 180A TO263-7-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,440	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 140µA	176nC @ 10V	14000pF @ 25V	±20V	-	188W (Tc)	1.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
PMN27XPE,115	Nexperia USA Inc.	MOSFET P-CH 20V 4.4A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 530mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock148,200	MOSFET (Metal Oxide)	20V	4.4A (Ta)	2.5V, 4.5V	1.25V @ 250µA	22.5nC @ 4.5V	1770pF @ 10V	±12V	-	530mW (Ta), 8.33W (Tc)	30 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
IPA60R380P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220FP-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,320	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	4.5V @ 320µA	19nC @ 10V	877pF @ 100V	±20V	-	31W (Tc)	380 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPS70R2K0CEAKMA1	Infineon Technologies	MOSFET NCH 700V 4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock8,748	MOSFET (Metal Oxide)	700V	4A (Tc)	10V	3.5V @ 70µA	7.8nC @ 10V	163pF @ 100V	±20V	Super Junction	42W (Tc)	2 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
DMTH4005SPSQ-13	Diodes Incorporated	MOSFET N-CH POWERDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20.9A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,544	MOSFET (Metal Oxide)	40V	20.9A (Ta), 100A (Tc)	10V	4V @ 250µA	49.1nC @ 10V	3062pF @ 20V	±20V	-	2.6W (Ta), 150W (Tc)	3.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
QS5U12TR	Rohm Semiconductor	MOSFET N-CH 30V 2A TSMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock7,856	MOSFET (Metal Oxide)	30V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	3.9nC @ 4.5V	175pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	100 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
IRFB4310PBF	Infineon Technologies	MOSFET N-CH 100V 130A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,840	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4V @ 250µA	250nC @ 10V	7670pF @ 50V	±20V	-	300W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NP50P04SLG-E1-AY	Renesas Electronics Corporation	MP-3ZK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 84W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock11,895	MOSFET (Metal Oxide)	40 V	50A (Ta)	4.5V, 10V	2.5V @ 250µA	150 nC @ 10 V	5700 pF @ 10 V	±20V	-	1.2W (Ta), 84W (Tc)	9.6mOhm @ 25A, 10V	175°C	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCU30P06Y-TP	Micro Commercial Co	P-CHANNEL MOSFET, DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tj) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock37,734	MOSFET (Metal Oxide)	60 V	30A	4.5V, 10V	2.7V @ 250µA	19.3 nC @ 10 V	1050 pF @ 30 V	±20V	-	72W (Tj)	55mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD220N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-311 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock16,182	MOSFET (Metal Oxide)	60 V	30A (Tc)	4.5V, 10V	2.2V @ 11µA	10 nC @ 4.5 V	1600 pF @ 30 V	±20V	-	36W (Tc)	22mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-311	TO-252-3, DPAK (2 Leads + Tab), SC-63
MTB60N05HDLT4	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP9565BGH	YAGEO XSEMI	MOSFET P-CH 40V 17A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock2,949	MOSFET (Metal Oxide)	40 V	17A (Tc)	4.5V, 10V	3V @ 250µA	12.5 nC @ 4.5 V	850 pF @ 25 V	±20V	-	25W (Tc)	52mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SISS22LDN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 25.5A/92.5A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock34,530	MOSFET (Metal Oxide)	60 V	25.5A (Ta), 92.5A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	2540 pF @ 30 V	±20V	-	5W (Ta), 65.7W (Tc)	3.65mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SQJA70EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 14.7A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock8,580	MOSFET (Metal Oxide)	100 V	14.7A (Tc)	10V	3.5V @ 250µA	7 nC @ 10 V	220 pF @ 25 V	±20V	-	27W (Tc)	95mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
RS1G201ATTB1	Rohm Semiconductor	MOSFET P-CH 40V 20A/78A 8HSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock21,570	MOSFET (Metal Oxide)	40 V	20A (Ta), 78A (Tc)	-	2.5V @ 1mA	130 nC @ 10 V	6890 pF @ 20 V	±20V	-	3W (Ta), 40W (Tc)	5.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
IXFK32N100X	IXYS	MOSFET N-CH 1000V 32A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: -	Stock3	MOSFET (Metal Oxide)	1000 V	32A (Tc)	10V	6V @ 4mA	130 nC @ 10 V	4075 pF @ 25 V	±30V	-	890W (Tc)	220mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
SIHB24N65EFT1-GE3	Vishay Siliconix	N-CHANNEL 650V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock8,202	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 250µA	122 nC @ 10 V	2774 pF @ 100 V	±30V	-	250W (Tc)	156mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB