Page 1045 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP80N10L
Infineon Technologies

MOSFET N-CH 100V 80A TO-220

Package: TO-220-3

Stock393,600
IRFSL17N20D
Infineon Technologies

MOSFET N-CH 200V 16A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,880
NTB6410ANG
ON Semiconductor

MOSFET N-CH 100V 76A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,608
FQPF32N12V2
Fairchild/ON Semiconductor

MOSFET N-CH 120V 32A TO-220F

Package: TO-220-3 Full Pack

Stock3,344
FQD9N08TM
Fairchild/ON Semiconductor

MOSFET N-CH 80V 7.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,808
MPF990
ON Semiconductor

MOSFET N-CH 90V 2A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,264
IRF9332TRPBF
Infineon Technologies

MOSFET P-CH 30V 9.8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,016
APT66F60L
Microsemi Corporation

MOSFET N-CH 600V 70A TO-264

Package: TO-264-3, TO-264AA

Stock6,672
SIHB8N50D-GE3
Vishay Siliconix

MOSFET N-CH 500V 8.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,336
SI4829DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock90,000
PSMN020-30MLCX
Nexperia USA Inc.

MOSFET N-CH 30V 31.8A LFPAK33

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock12,222
FDP5800
Fairchild/ON Semiconductor

MOSFET N-CH 60V 14A TO-220

Package: TO-220-3

Stock104,280
R6004ENX
Rohm Semiconductor

MOSFET N-CH 600V 4A TO220

Package: TO-220-2 Full Pack

Stock9,408
STH270N4F3-2
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,088
SI3127DV-T1-GE3
Vishay Siliconix

MOSFET P-CHAN 60V TSOP6S

Package: SOT-23-6 Thin, TSOT-23-6

Stock295,668
SIR644DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock55,362
DMT10H009LFG-13
Diodes Incorporated

MOSFET N-CH 100V 13A/50A PWRDI

Package: -

Request a Quote
SIHK125N60EF-T1GE3
Vishay Siliconix

E SERIES POWER MOSFET WITH FAST

Package: -

Stock150
ISZ230N10NM6ATMA1
Infineon Technologies

TRENCH >=100V PG-TSDSON-8

Package: -

Stock27,039
STB33N60DM6
STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

Package: -

Stock792

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP80N10L	Infineon Technologies	MOSFET N-CH 100V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock393,600	MOSFET (Metal Oxide)	100V	80A (Tc)	4.5V, 10V	2V @ 2mA	240nC @ 10V	4540pF @ 25V	±20V	-	250W (Tc)	14 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFSL17N20D	Infineon Technologies	MOSFET N-CH 200V 16A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,880	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	5.5V @ 250µA	50nC @ 10V	1100pF @ 25V	±30V	-	3.8W (Ta), 140W (Tc)	170 mOhm @ 9.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NTB6410ANG	ON Semiconductor	MOSFET N-CH 100V 76A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,608	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	188W (Tc)	13 mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF32N12V2	Fairchild/ON Semiconductor	MOSFET N-CH 120V 32A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,344	MOSFET (Metal Oxide)	120V	32A (Tc)	10V	4V @ 250µA	53nC @ 10V	1860pF @ 25V	±30V	-	50W (Tc)	50 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQD9N08TM	Fairchild/ON Semiconductor	MOSFET N-CH 80V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,808	MOSFET (Metal Oxide)	80V	7.4A (Tc)	10V	4V @ 250µA	7.7nC @ 10V	250pF @ 25V	±25V	-	2.5W (Ta), 25W (Tc)	210 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MPF990	ON Semiconductor	MOSFET N-CH 90V 2A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,264	MOSFET (Metal Oxide)	90V	2A (Ta)	10V	3.5V @ 1mA	-	70pF @ 25V	±20V	-	1W (Ta)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF9332TRPBF	Infineon Technologies	MOSFET P-CH 30V 9.8A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,016	MOSFET (Metal Oxide)	30V	9.8A (Ta)	4.5V, 10V	2.4V @ 25µA	41nC @ 10V	1270pF @ 25V	±20V	-	2.5W (Ta)	17.5 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
APT66F60L	Microsemi Corporation	MOSFET N-CH 600V 70A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,672	MOSFET (Metal Oxide)	600V	70A (Tc)	10V	5V @ 2.5mA	330nC @ 10V	13190pF @ 25V	±30V	-	1135W (Tc)	90 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
SIHB8N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 8.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,336	MOSFET (Metal Oxide)	500V	8.7A (Tc)	10V	5V @ 250µA	30nC @ 10V	527pF @ 100V	±30V	-	156W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4829DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock90,000	MOSFET (Metal Oxide)	20V	2A (Tc)	2.5V, 4.5V	1.5V @ 250µA	8nC @ 10V	210pF @ 10V	±12V	Schottky Diode (Isolated)	2W (Ta), 3.1W (Tc)	215 mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN020-30MLCX	Nexperia USA Inc.	MOSFET N-CH 30V 31.8A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 18.1 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock12,222	MOSFET (Metal Oxide)	30V	31.8A (Tc)	4.5V, 10V	1.95V @ 1mA	9.5nC @ 10V	430pF @ 15V	±20V	-	33W (Tc)	18.1 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
FDP5800	Fairchild/ON Semiconductor	MOSFET N-CH 60V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock104,280	MOSFET (Metal Oxide)	60V	14A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 250µA	145nC @ 10V	9160pF @ 15V	±20V	-	242W (Tc)	6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
R6004ENX	Rohm Semiconductor	MOSFET N-CH 600V 4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,408	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 1mA	15nC @ 10V	250pF @ 25V	±20V	-	40W (Tc)	980 mOhm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
STH270N4F3-2	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,088	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 250µA	150nC @ 10V	7400pF @ 25V	±20V	-	300W (Tc)	1.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
SI3127DV-T1-GE3	Vishay Siliconix	MOSFET P-CHAN 60V TSOP6S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 833pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock295,668	MOSFET (Metal Oxide)	60V	3.5A (Ta), 13A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 10V	833pF @ 20V	±20V	-	2W (Ta), 4.2W (Tc)	89 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SIR644DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock55,362	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	2.2V @ 250µA	71nC @ 10V	3200pF @ 20V	±20V	-	5.2W (Ta), 69W (Tc)	2.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
DMT10H009LFG-13	Diodes Incorporated	MOSFET N-CH 100V 13A/50A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	13A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	2361 pF @ 50 V	±20V	-	2W (Ta), 30W (Tc)	8.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
SIHK125N60EF-T1GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: PowerPAK®10 x 12 Package / Case: 8-PowerBSFN	Package: -	Stock150	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	5V @ 250µA	45 nC @ 10 V	1863 pF @ 100 V	±30V	-	132W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C	Surface Mount	PowerPAK®10 x 12	8-PowerBSFN
ISZ230N10NM6ATMA1	Infineon Technologies	TRENCH >=100V PG-TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.3V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock27,039	MOSFET (Metal Oxide)	100 V	7.7A (Ta), 31A (Tc)	8V, 10V	3.3V @ 13µA	9.3 nC @ 10 V	690 pF @ 50 V	±20V	-	3W (Ta), 48W (Tc)	23mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8 FL	8-PowerTDFN
STB33N60DM6	STMicroelectronics	MOSFET N-CH 600V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock792	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.75V @ 250µA	35 nC @ 10 V	1500 pF @ 100 V	±25V	-	190W (Tc)	128mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R105CFD7XKSA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock531	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	4.5V @ 470µA	42 nC @ 10 V	1752 pF @ 400 V	±20V	-	106W (Tc)	105mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
STB16N90K5	STMicroelectronics	MOSFET N-CH 900V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1027 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,155	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	5V @ 100µA	29.7 nC @ 10 V	1027 pF @ 100 V	±30V	-	190W (Tc)	330mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHK055N60EF-T1GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK®10 x 12 Package / Case: 8-PowerBSFN	Package: -	Stock6,120	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	5V @ 250µA	90 nC @ 10 V	3667 pF @ 100 V	±30V	-	236W (Tc)	58mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK®10 x 12	8-PowerBSFN
IXFY13N60X3	IXYS	DISCRETE MOSFET 13A 600V X3 TO25 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCPF600N60ZL1-F154	onsemi	MOSFET N-CH 600V 7.4A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.4A (Tj)	-	3.5V @ 250µA	26 nC @ 10 V	1120 pF @ 25 V	±20V	-	28W (Tc)	600mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
2SK1286-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS205NH6327XTSA1-ML	MOSLEADER	N 20V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQD50P08-28_GE3	Vishay Siliconix	MOSFET P-CH 80V 48A TO252AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock20,982	MOSFET (Metal Oxide)	80 V	48A (Tc)	10V	3.5V @ 250µA	145 nC @ 10 V	6035 pF @ 25 V	±20V	-	136W (Tc)	28mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63