Page 1046 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR13N20DTRRP
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,848
IPB03N03LA
Infineon Technologies

MOSFET N-CH 25V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock242,508
IRFZ48ZSPBF
Infineon Technologies

MOSFET N-CH 55V 61A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,920
BSS209PW
Infineon Technologies

MOSFET P-CH 20V 580MA SOT-323

Package: SC-70, SOT-323

Stock550,980
MCH3382-TL-H
ON Semiconductor

MOSFET P-CH 12V 2A MCPH3

Package: 3-SMD, Flat Leads

Stock414,252
NTGD4169FT1G
ON Semiconductor

MOSFET N-CH 30V 2.6A 6-TSOP

Package: SOT-23-6

Stock360,012
FQL50N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 50A TO-264

Package: TO-264-3, TO-264AA

Stock4,496
FQP18N50V2
Fairchild/ON Semiconductor

MOSFET N-CH 500V 18A TO-220

Package: TO-220-3

Stock174,468
IRFZ40
Vishay Siliconix

MOSFET N-CH 60V 50A TO220AB

Package: TO-220-3

Stock5,872
STP15NM60N
STMicroelectronics

MOSFET N-CH 600V 14A TO-220

Package: TO-220-3

Stock11,196
IPI037N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 100A

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,480
IXFH150N15P
IXYS

MOSFET N-CH 150V 150A TO-247

Package: TO-247-3

Stock2,592
STI6N95K5
STMicroelectronics

NCHANNEL 950V ZENER POWER MOSFET

Package: -

Stock3,664
IRF7820TRPBF
Infineon Technologies

MOSFET N CH 200V 3.7A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,816
ATP304-TL-H
ON Semiconductor

MOSFET P-CH 60V 100A ATPAK

Package: ATPAK (2 leads+tab)

Stock3,824
SI5432DC-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 6A 1206-8

Package: 8-SMD, Flat Lead

Stock617,460
FCP21N60N
Fairchild Semiconductor

N-CHANNEL, MOSFET

Package: -

Request a Quote
2SK3326-9-AZ
Renesas Electronics Corporation

DISCRETE / POWER MOSFET

Package: -

Request a Quote
APT20M45SVFRG
Microchip Technology

MOSFET N-CH 200V 56A D3PAK

Package: -

Request a Quote
RHK003N06FRAT146
Rohm Semiconductor

MOSFET N-CH 60V 300MA SMT3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR13N20DTRRP	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,848	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB03N03LA	Infineon Technologies	MOSFET N-CH 25V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock242,508	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 100µA	57nC @ 5V	7027pF @ 15V	±20V	-	150W (Tc)	2.7 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ48ZSPBF	Infineon Technologies	MOSFET N-CH 55V 61A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,920	MOSFET (Metal Oxide)	55V	61A (Tc)	10V	4V @ 250µA	64nC @ 10V	1720pF @ 25V	±20V	-	91W (Tc)	11 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS209PW	Infineon Technologies	MOSFET P-CH 20V 580MA SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 520mW (Ta) Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock550,980	MOSFET (Metal Oxide)	20V	580mA (Ta)	2.5V, 4.5V	1.2V @ 3.5µA	1.38nC @ 4.5V	89.9pF @ 15V	±12V	-	520mW (Ta)	550 mOhm @ 580mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
MCH3382-TL-H	ON Semiconductor	MOSFET P-CH 12V 2A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6V Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock414,252	MOSFET (Metal Oxide)	12V	2A (Ta)	1.8V, 4.5V	-	2.3nC @ 4.5V	170 pF @ 6V	±9V	-	800mW (Ta)	198 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
NTGD4169FT1G	ON Semiconductor	MOSFET N-CH 30V 2.6A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V Operating Temperature: -25°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock360,012	MOSFET (Metal Oxide)	30V	2.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5.5nC @ 4.5V	295pF @ 15V	±12V	Schottky Diode (Isolated)	900mW (Ta)	90 mOhm @ 2.6A, 4.5V	-25°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
FQL50N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 50A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,496	MOSFET (Metal Oxide)	400V	50A (Tc)	10V	5V @ 250µA	210nC @ 10V	7500pF @ 25V	±30V	-	460W (Tc)	75 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
FQP18N50V2	Fairchild/ON Semiconductor	MOSFET N-CH 500V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock174,468	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	5V @ 250µA	55nC @ 10V	3290pF @ 25V	±30V	-	208W (Tc)	265 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFZ40	Vishay Siliconix	MOSFET N-CH 60V 50A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,872	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock11,196	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI037N08N3GXKSA1	Infineon Technologies	MOSFET N-CH 80V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,480	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.5V @ 155µA	117nC @ 10V	8110pF @ 40V	±20V	-	214W (Tc)	3.75 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFH150N15P	IXYS	MOSFET N-CH 150V 150A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,592	MOSFET (Metal Oxide)	150V	150A (Tc)	10V	5V @ 4mA	190nC @ 10V	5800pF @ 25V	±20V	-	714W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
STI6N95K5	STMicroelectronics	NCHANNEL 950V ZENER POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,664	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7820TRPBF	Infineon Technologies	MOSFET N CH 200V 3.7A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,816	MOSFET (Metal Oxide)	200V	3.7A (Ta)	10V	5V @ 100µA	44nC @ 10V	1750pF @ 100V	±20V	-	2.5W (Ta)	78 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ATP304-TL-H	ON Semiconductor	MOSFET P-CH 60V 100A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock3,824	MOSFET (Metal Oxide)	60V	100A (Ta)	4.5V, 10V	-	250nC @ 10V	13000pF @ 20V	±20V	-	90W (Tc)	6.5 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
SI5432DC-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 6A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock617,460	MOSFET (Metal Oxide)	20V	6A (Tc)	2.5V, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	±12V	-	2.5W (Ta), 6.3W (Tc)	20 mOhm @ 8.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
FCP21N60N	Fairchild Semiconductor	N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3
2SK3326-9-AZ	Renesas Electronics Corporation	DISCRETE / POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT20M45SVFRG	Microchip Technology	MOSFET N-CH 200V 56A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	56A (Tc)	-	4V @ 1mA	195 nC @ 10 V	4860 pF @ 25 V	-	-	-	45mOhm @ 500mA, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
RHK003N06FRAT146	Rohm Semiconductor	MOSFET N-CH 60V 300MA SMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4V, 10V	2.5V @ 1mA	6 nC @ 10 V	33 pF @ 10 V	±20V	-	200mW (Ta)	1Ohm @ 300mA, 10V	150°C (TJ)	Surface Mount	SMT3	TO-236-3, SC-59, SOT-23-3
SQM50034E_GE3	Vishay Siliconix	MOSFET N-CH 60V 100A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,065	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	3.5V @ 250µA	90 nC @ 10 V	6600 pF @ 25 V	±20V	-	150W (Tc)	3.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQD50P04-09L_T4GE3	Vishay Siliconix	MOSFET P-CH 40V 50A TO252AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	155 nC @ 10 V	6675 pF @ 20 V	±20V	-	136W (Tc)	9.4mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
FCPF11N65	Fairchild Semiconductor	TRANS MOSFET N-CH 600V 11A 3PIN( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	-	5V @ 250µA	52 nC @ 10 V	1490 pF @ 25 V	-	-	36W (Tc)	380mOhm @ 5.5A, 10V	-	Through Hole	TO-220F	TO-220-3 Full Pack
SCT10N120H	STMicroelectronics	SICFET N-CH 1200V 12A H2PAK-2 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	12A (Tc)	20V	3.5V @ 250µA	22 nC @ 20 V	290 pF @ 400 V	+25V, -10V	-	150W (Tc)	690mOhm @ 6A, 20V	-55°C ~ 200°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMTH8008SPS-13	Diodes Incorporated	MOSFET N-CH 80V 92A PWRDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	92A (Tc)	6V, 10V	4V @ 1mA	34 nC @ 10 V	1950 pF @ 40 V	±20V	-	1.6W (Ta), 100W (Tc)	7.8mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
MCH6405-TL-E	onsemi	NCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTR3A30PZT1G-ML	MOSLEADER	P-Channel -20V 5.1A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7832TR	Infineon Technologies	MOSFET N-CH 30V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.32V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta)	-	2.32V @ 250µA	51 nC @ 4.5 V	4310 pF @ 15 V	-	-	-	4mOhm @ 20A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)