Page 1053 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

NTD4857NAT4G
ON Semiconductor

MOSFET N-CH 25V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
SI2308DS-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 2A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,440,468
FQP33N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 33A TO-220

Package: TO-220-3

Stock16,248
STD1HNC60T4
STMicroelectronics

MOSFET N-CH 600V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock210,024
IPB120N08S403ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,008
IXFL44N100P
IXYS

MOSFET N-CH 1000V 22A I5-PAK

Package: ISOPLUSi5-Pak?

Stock3,200
IXTP74N15T
IXYS

MOSFET N-CH 150V 74A TO-220

Package: TO-220-3

Stock3,040
SI4686DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 18.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,205,220
GKI07113
Sanken

MOSFET N-CH 75V 9A 8DFN

Package: 8-PowerTDFN

Stock6,496
IXFX55N50
IXYS

MOSFET N-CH 500V 55A PLUS247

Package: TO-247-3

Stock36,576
TK16J60W,S1VQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-3P(N)

Package: TO-3P-3, SC-65-3

Stock6,276
STP28N60DM2
STMicroelectronics

MOSFET N-CH 600V 21A

Package: TO-220-3

Stock7,712
IXTA90N075T2
IXYS

MOSFET N-CH 75V 90A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
FQPF8N80C
Fairchild/ON Semiconductor

MOSFET N-CH 800V 8A TO-220F

Package: TO-220-3 Full Pack

Stock4,608
IRF6775MTRPBF
Infineon Technologies

MOSFET N-CH 150V 4.9A DIRECTFET

Package: DirectFET? Isometric MZ

Stock34,272
STB24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,096
STL18N55M5
STMicroelectronics

MOSFET N-CH 550V 2.4A POWERFLAT

Package: 4-PowerFlat? HV

Stock33,600
IRF40B207
Infineon Technologies

MOSFET N-CH 40V 95A TO-220AB

Package: TO-220-3

Stock103,464
IRFI9540GPBF
Vishay Siliconix

MOSFET P-CH 100V 11A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock43,410
IXFA4N100Q
IXYS

MOSFET N-CH 1000V 4A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,936

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD4857NAT4G	ON Semiconductor	MOSFET N-CH 25V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	25V	12A (Ta), 78A (Tc)	-	2.5V @ 250µA	24nC @ 4.5V	1960pF @ 12V	-	-	-	5.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SI2308DS-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 2A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,440,468	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	3V @ 250µA	10nC @ 10V	240pF @ 25V	±20V	-	1.25W (Ta)	160 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQP33N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 33A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock16,248	MOSFET (Metal Oxide)	100V	33A (Tc)	5V, 10V	2V @ 250µA	40nC @ 5V	1630pF @ 25V	±20V	-	127W (Tc)	52 mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STD1HNC60T4	STMicroelectronics	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock210,024	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4V @ 250µA	15.5nC @ 10V	228pF @ 25V	±30V	-	50W (Tc)	5 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB120N08S403ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 223µA Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,008	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 223µA	167nC @ 10V	11550pF @ 25V	±20V	-	278W (Tc)	2.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFL44N100P	IXYS	MOSFET N-CH 1000V 22A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUSi5-Pak?	Package: ISOPLUSi5-Pak?	Stock3,200	MOSFET (Metal Oxide)	1000V	22A (Tc)	10V	6.5V @ 1mA	305nC @ 10V	19000pF @ 25V	±30V	-	357W (Tc)	240 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUSi5-Pak?
IXTP74N15T	IXYS	MOSFET N-CH 150V 74A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,040	MOSFET (Metal Oxide)	150V	74A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220AB	TO-220-3
SI4686DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 5.2W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,205,220	MOSFET (Metal Oxide)	30V	18.2A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1220pF @ 15V	±20V	-	3W (Ta), 5.2W (Tc)	9.5 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
GKI07113	Sanken	MOSFET N-CH 75V 9A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 27.2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,496	MOSFET (Metal Oxide)	75V	9A (Ta)	4.5V, 10V	2.5V @ 1mA	57nC @ 10V	4040pF @ 25V	±20V	-	3.1W (Ta), 77W (Tc)	9.1 mOhm @ 27.2A, 10V	150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerTDFN
IXFX55N50	IXYS	MOSFET N-CH 500V 55A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock36,576	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	625W (Tc)	80 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
TK16J60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A TO-3P(N) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,276	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	3.7V @ 790µA	38nC @ 10V	1350pF @ 300V	±30V	Super Junction	130W (Tc)	190 mOhm @ 7.9A, 10V	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
STP28N60DM2	STMicroelectronics	MOSFET N-CH 600V 21A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,712	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	34nC @ 10V	1500pF @ 100V	±25V	-	170W (Tc)	160 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTA90N075T2	IXYS	MOSFET N-CH 75V 90A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	75V	90A (Tc)	10V	4V @ 250µA	54nC @ 10V	3290pF @ 25V	±20V	-	180W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF8N80C	Fairchild/ON Semiconductor	MOSFET N-CH 800V 8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,608	MOSFET (Metal Oxide)	800V	8A (Tc)	10V	5V @ 250µA	45nC @ 10V	2050pF @ 25V	±30V	-	59W (Tc)	1.55 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRF6775MTRPBF	Infineon Technologies	MOSFET N-CH 150V 4.9A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1411pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 5.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock34,272	MOSFET (Metal Oxide)	150V	4.9A (Ta), 28A (Tc)	10V	5V @ 100µA	36nC @ 10V	1411pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	56 mOhm @ 5.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
STB24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,096	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	150W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL18N55M5	STMicroelectronics	MOSFET N-CH 550V 2.4A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1352pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock33,600	MOSFET (Metal Oxide)	550V	2.4A (Ta), 13A (Tc)	10V	5V @ 250µA	31nC @ 10V	1352pF @ 100V	±25V	-	3W (Ta), 90W (Tc)	270 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
IRF40B207	Infineon Technologies	MOSFET N-CH 40V 95A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 57A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	40V	95A (Tc)	6V, 10V	3.9V @ 50µA	68nC @ 10V	2110pF @ 25V	±20V	-	83W (Tc)	4.5 mOhm @ 57A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFI9540GPBF	Vishay Siliconix	MOSFET P-CH 100V 11A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock43,410	MOSFET (Metal Oxide)	100V	11A (Tc)	10V	4V @ 250µA	61nC @ 10V	1400pF @ 25V	±20V	-	48W (Tc)	200 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IXFA4N100Q	IXYS	MOSFET N-CH 1000V 4A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,936	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	4.5V @ 1.5mA	39nC @ 10V	1050pF @ 25V	±20V	-	150W (Tc)	3 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMPH4016SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.6W (Ta), 143W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	90.7A (Tc)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5697 pF @ 20 V	±20V	-	4.6W (Ta), 143W (Tc)	10mOhm @ 9.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
NVMFS6H818NWFT1G	onsemi	MOSFET N-CH 80V 20A/123A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock7,827	MOSFET (Metal Oxide)	80 V	20A (Ta), 123A (Tc)	10V	4V @ 190µA	46 nC @ 10 V	3100 pF @ 40 V	±20V	-	3.8W (Ta), 136W (Tc)	3.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
RQ5H020TNTL	Rohm Semiconductor	MOSFET N-CH 45V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock48,582	MOSFET (Metal Oxide)	45 V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.1 nC @ 4.5 V	200 pF @ 10 V	±12V	-	700mW (Ta)	180mOhm @ 2A, 4.V	150°C (TJ)	Surface Mount	TSMT3	SC-96
DMP31D7L-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock63,684	MOSFET (Metal Oxide)	30 V	580mA (Ta)	4.5V, 10V	2.6V @ 250µA	0.36 nC @ 4.5 V	19 pF @ 15 V	±20V	-	430mW (Ta)	900mOhm @ 420mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPP082N10NF2SAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock279	MOSFET (Metal Oxide)	100 V	15A (Ta), 77A (Tc)	6V, 10V	3.8V @ 46µA	42 nC @ 10 V	2000 pF @ 50 V	±20V	-	3.8W (Ta), 100W (Tc)	8.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
PJQ4413P_R2_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	2.5V @ 250µA	4.8 nC @ 4.5 V	516 pF @ 15 V	±20V	-	2W (Ta)	50mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
CDMSJ2204-7-650-SL	Central Semiconductor Corp	SUPER JUNCTION MOSFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 22.5W (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock1,500	MOSFET (Metal Oxide)	650 V	4.7A (Tc)	10V	4V @ 250µA	9.7 nC @ 10 V	306 pF @ 400 V	30V	-	22.5W (Tc)	990mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
MCH6406-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-