Page 1056 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRF7478Q
Infineon Technologies

MOSFET N-CH 60V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock246,708
NP36P06SLG-E1-AY
Renesas Electronics America

MOSFET P-CH 60V 36A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock179,928
MTD6N15T4GV
ON Semiconductor

MOSFET N-CH 150V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
ZXMN3A03E6TC
Diodes Incorporated

MOSFET N-CH 30V 3.7A SOT23-6

Package: SOT-23-6

Stock6,384
IRFD210
Vishay Siliconix

MOSFET N-CH 200V 600MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock15,576
STW16NK60Z
STMicroelectronics

MOSFET N-CH 600V 14A TO-247

Package: TO-247-3

Stock5,088
AUIRFP4004
Infineon Technologies

MOSFET N-CH 40V 350A TO-247AC

Package: TO-247-3

Stock6,208
APT50M65LLLG
Microsemi Corporation

MOSFET N-CH 500V 67A TO-264

Package: TO-264-3, TO-264AA

Stock6,224
IXTP38N15T
IXYS

MOSFET N-CH 150V 38A TO-220

Package: TO-220-3

Stock4,304
AOTF20C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO220F

Package: TO-220-3 Full Pack

Stock3,200
PSMNR90-30BL,118
Nexperia USA Inc.

MOSFET N-CH 30V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,504
SPD06N60C3BTMA1
Infineon Technologies

MOSFET N-CH 650V 6.2A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,664
IPP040N06NAKSA1
Infineon Technologies

MOSFET N-CH 60V 20A TO220-3

Package: TO-220-3

Stock13,608
IRLR014
Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,478,328
AO4260
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock93,756
STW40N60M2
STMicroelectronics

MOSFET N-CH 600V 34A TO-247

Package: TO-247-3

Stock5,376
US5U3TR
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock51,426
STFI8N80K5
STMicroelectronics

MOSFET N-CH 800V 6A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock14,304
IXTP01N100D
IXYS

MOSFET N-CH 1KV .1A TO-220AB

Package: TO-220-3

Stock27,600
SSM3K324R,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT-23F

Package: SOT-23-3 Flat Leads

Stock380,064

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRF7478Q	Infineon Technologies	MOSFET N-CH 60V 7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock246,708	MOSFET (Metal Oxide)	60V	7A (Ta)	4.5V, 10V	3V @ 250µA	31nC @ 4.5V	1740pF @ 25V	±20V	-	2.5W (Ta)	26 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NP36P06SLG-E1-AY	Renesas Electronics America	MOSFET P-CH 60V 36A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 18A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock179,928	MOSFET (Metal Oxide)	60V	36A (Tc)	4.5V, 10V	-	52nC @ 10V	3200pF @ 10V	±20V	-	1.2W (Ta), 56W (Tc)	30 mOhm @ 18A, 10V	175°C (TJ)	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPak (2 Leads + Tab), SC-63
MTD6N15T4GV	ON Semiconductor	MOSFET N-CH 150V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	150V	6A (Tc)	10V	4.5V @ 1mA	30nC @ 10V	1200pF @ 25V	±20V	-	1.25W (Ta), 20W (Tc)	300 mOhm @ 3A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN3A03E6TC	Diodes Incorporated	MOSFET N-CH 30V 3.7A SOT23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock6,384	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	1V @ 250µA	12.6nC @ 10V	600pF @ 25V	±20V	-	1.1W (Ta)	50 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
IRFD210	Vishay Siliconix	MOSFET N-CH 200V 600MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock15,576	MOSFET (Metal Oxide)	200V	600mA (Ta)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	1W (Ta)	1.5 Ohm @ 360mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
STW16NK60Z	STMicroelectronics	MOSFET N-CH 600V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,088	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4.5V @ 50µA	86nC @ 10V	2650pF @ 25V	±30V	-	190W (Tc)	420 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
AUIRFP4004	Infineon Technologies	MOSFET N-CH 40V 350A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,208	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	4V @ 250µA	330nC @ 10V	8920pF @ 25V	±20V	-	380W (Tc)	1.7 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
APT50M65LLLG	Microsemi Corporation	MOSFET N-CH 500V 67A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,224	MOSFET (Metal Oxide)	500V	67A (Tc)	10V	5V @ 2.5mA	141nC @ 10V	7010pF @ 25V	±30V	-	694W (Tc)	65 mOhm @ 33.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXTP38N15T	IXYS	MOSFET N-CH 150V 38A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,304	MOSFET (Metal Oxide)	150V	38A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220AB	TO-220-3
AOTF20C60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 20A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,200	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	74nC @ 10V	3500pF @ 50V	±30V	-	50W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
PSMNR90-30BL,118	Nexperia USA Inc.	MOSFET N-CH 30V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,504	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	2.2V @ 1mA	243nC @ 10V	14850pF @ 15V	±20V	-	306W (Tc)	1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPD06N60C3BTMA1	Infineon Technologies	MOSFET N-CH 650V 6.2A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,664	MOSFET (Metal Oxide)	650V	6.2A (Tc)	10V	3.9V @ 260µA	31nC @ 10V	620pF @ 25V	±20V	-	74W (Tc)	750 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP040N06NAKSA1	Infineon Technologies	MOSFET N-CH 60V 20A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock13,608	MOSFET (Metal Oxide)	60V	20A (Ta), 80A (Tc)	6V, 10V	2.8V @ 50µA	38nC @ 10V	2700pF @ 30V	±20V	-	3W (Ta), 107W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRLR014	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,478,328	MOSFET (Metal Oxide)	60V	7.7A (Tc)	4V, 5V	2V @ 250µA	8.4nC @ 5V	400pF @ 25V	±10V	-	2.5W (Ta), 25W (Tc)	200 mOhm @ 4.6A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4260	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 18A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4940pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock93,756	MOSFET (Metal Oxide)	60V	18A (Ta)	4.5V, 10V	2.4V @ 250µA	100nC @ 10V	4940pF @ 30V	±20V	-	3.1W (Ta)	5.2 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STW40N60M2	STMicroelectronics	MOSFET N-CH 600V 34A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,376	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	57nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	88 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
US5U3TR	Rohm Semiconductor	MOSFET N-CH 30V 1.5A TUMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Vgs (Max): 12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock51,426	MOSFET (Metal Oxide)	30V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	12V	Schottky Diode (Isolated)	1W (Ta)	240 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
STFI8N80K5	STMicroelectronics	MOSFET N-CH 800V 6A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock14,304	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	5V @ 100µA	16.5nC @ 10V	450pF @ 100V	±30V	-	25W (Tc)	950 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
IXTP01N100D	IXYS	MOSFET N-CH 1KV .1A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 110 Ohm @ 50mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock27,600	MOSFET (Metal Oxide)	1000V	100mA (Tc)	-	-	-	120pF @ 25V	±20V	Depletion Mode	1.1W (Ta), 25W (Tc)	110 Ohm @ 50mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SSM3K324R,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 4A SOT-23F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock380,064	MOSFET (Metal Oxide)	30V	4A (Ta)	1.8V, 4.5V	-	-	190pF @ 30V	±12V	-	1W (Ta)	55 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
NDP6020P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 24A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 12A, 4.5V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock618,048	MOSFET (Metal Oxide)	20V	24A (Tc)	4.5V	1V @ 250µA	35nC @ 5V	1590pF @ 10V	±8V	-	60W (Tc)	50 mOhm @ 12A, 4.5V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
CSD18502Q5B	Texas Instruments	MOSFET N-CH 40V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock9,060	MOSFET (Metal Oxide)	40V	26A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	68nC @ 10V	5070pF @ 20V	±20V	-	3.2W (Ta), 156W (Tc)	2.3 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IXTN400N15X4	IXYS	MOSFET N-CH 150V 400A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1070W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	4.5V @ 1mA	430 nC @ 10 V	14500 pF @ 25 V	±20V	-	1070W (Tc)	2.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
TPH1R405PL-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 45V 120A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock14,880	MOSFET (Metal Oxide)	45 V	120A (Tc)	4.5V, 10V	2.4V @ 500µA	74 nC @ 10 V	6300 pF @ 22.5 V	±20V	-	960mW (Ta), 132W (Tc)	1.4mOhm @ 50A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SUP50010E-GE3	Vishay Siliconix	MOSFET N-CH 60V 150A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock552	MOSFET (Metal Oxide)	60 V	150A (Tc)	7.5V, 10V	4V @ 250µA	212 nC @ 10 V	10895 pF @ 30 V	±20V	-	375W (Tc)	2mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS6H800NT1G	onsemi	MOSFET N-CH 80V 28A/203A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 330µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,000	MOSFET (Metal Oxide)	80 V	28A (Ta), 203A (Tc)	10V	4V @ 330µA	85 nC @ 10 V	5530 pF @ 40 V	±20V	-	3.8W (Ta), 200W (Tc)	2.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PJA3412-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock50,829	MOSFET (Metal Oxide)	20 V	4.1A (Ta)	1.8V, 4.5V	1.2V @ 250µA	4.6 nC @ 4.5 V	350 pF @ 10 V	±12V	-	1.25W (Ta)	56mOhm @ 4.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BUK7D25-40EX	Nexperia USA Inc.	MOSFET N-CH 40V 8A DFN2020MD-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock7,752	MOSFET (Metal Oxide)	40 V	8A (Ta)	10V	4V @ 250µA	13 nC @ 10 V	460 pF @ 20 V	±20V	-	15W (Tc)	25mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad