Page 1054 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB100N04S204ATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,512
IRL3502STRRPBF
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,096
IRF4104S
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,320
IRF830STRL
Vishay Siliconix

MOSFET N-CH 500V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,596
STF16NK60Z
STMicroelectronics

MOSFET N-CH 600V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock97,404
IXTH36P15P
IXYS

MOSFET P-CH 150V 36A TO-247

Package: TO-247-3

Stock2,544
IRFBF30STRLPBF
Vishay Siliconix

MOSFET N-CH 900V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,888
NVMFS5C682NLWFAFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,672
TSM60N380CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,368
STL3P6F6
STMicroelectronics

MOSFET P-CH 60V 3A POWERFLAT

Package: -

Stock3,408
FDMT800150DC
Fairchild/ON Semiconductor

MOSFET N-CH 150V 15A

Package: 8-PowerVDFN

Stock3,696
SQS401EN-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 16A

Package: PowerPAK? 1212-8

Stock6,480
PSMN9R0-25MLC,115
Nexperia USA Inc.

MOSFET N-CH 25V 55A LFPAK33

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock16,668
SI4436DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,756
IRF7465TRPBF
Infineon Technologies

MOSFET N-CH 150V 1.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock44,052
FDMA7628
Fairchild/ON Semiconductor

MOSFET N-CH 20V 6QFN

Package: 6-WDFN Exposed Pad

Stock366,636
DMP3007SPSQ-13
Diodes Incorporated

MOSFET 25V~30V POWERDI5060-8

Package: -

Request a Quote
DMT6013LFDF-13
Diodes Incorporated

MOSFET N-CH 60V 10A 6UDFN

Package: -

Request a Quote
GSFU90R340
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 12.00A, 90

Package: -

Stock750
FLD470
Sanken Electric USA Inc.

MOSFET 40V/70A/0.005

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB100N04S204ATMA1	Infineon Technologies	MOSFET N-CH 40V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,512	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 250µA	172nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3502STRRPBF	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,096	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF4104S	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,320	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	100nC @ 10V	3000pF @ 25V	±20V	-	140W (Tc)	5.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830STRL	Vishay Siliconix	MOSFET N-CH 500V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,596	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	-	3.1W (Ta), 74W (Tc)	1.5 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF16NK60Z	STMicroelectronics	MOSFET N-CH 600V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock97,404	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4.5V @ 50µA	86nC @ 10V	2650pF @ 25V	±30V	-	40W (Tc)	420 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IXTH36P15P	IXYS	MOSFET P-CH 150V 36A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,544	MOSFET (Metal Oxide)	150V	36A (Tc)	10V	4.5V @ 250µA	55nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IRFBF30STRLPBF	Vishay Siliconix	MOSFET N-CH 900V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,888	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	3.7 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C682NLWFAFT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,672	MOSFET (Metal Oxide)	60V	8.8A (Ta), 25A (Tc)	4.5V, 10V	2V @ 16µA	5nC @ 10V	410pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
TSM60N380CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,368	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	20.5nC @ 10V	1040pF @ 100V	±30V	-	125W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
STL3P6F6	STMicroelectronics	MOSFET P-CH 60V 3A POWERFLAT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,408	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMT800150DC	Fairchild/ON Semiconductor	MOSFET N-CH 150V 15A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8205pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,696	MOSFET (Metal Oxide)	150V	15A (Ta), 99A (Tc)	6V, 10V	4V @ 250µA	108nC @ 10V	8205pF @ 75V	±20V	-	3.2W (Ta), 156W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
SQS401EN-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 16A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock6,480	MOSFET (Metal Oxide)	40V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	21.2nC @ 4.5V	1875pF @ 20V	±20V	-	62.5W (Tc)	29 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
PSMN9R0-25MLC,115	Nexperia USA Inc.	MOSFET N-CH 25V 55A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 8.65 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock16,668	MOSFET (Metal Oxide)	25V	55A (Tc)	4.5V, 10V	1.95V @ 1mA	11.7nC @ 10V	705pF @ 12.5V	±20V	-	45W (Tc)	8.65 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
SI4436DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,756	MOSFET (Metal Oxide)	60V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	32nC @ 10V	1100pF @ 30V	±20V	-	2.5W (Ta), 5W (Tc)	36 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7465TRPBF	Infineon Technologies	MOSFET N-CH 150V 1.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock44,052	MOSFET (Metal Oxide)	150V	1.9A (Ta)	10V	5.5V @ 250µA	15nC @ 10V	330pF @ 25V	±30V	-	2.5W (Ta)	280 mOhm @ 1.14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMA7628	Fairchild/ON Semiconductor	MOSFET N-CH 20V 6QFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock366,636	MOSFET (Metal Oxide)	20V	9.4A (Ta)	1.5V, 4.5V	1V @ 250µA	17.5nC @ 4.5V	1680pF @ 10V	±8V	-	1.9W (Ta)	14.5 mOhm @ 9.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
DMP3007SPSQ-13	Diodes Incorporated	MOSFET 25V~30V POWERDI5060-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	90A (Tc)	4.5V, 10V	3V @ 250µA	64.2 nC @ 10 V	2826 pF @ 15 V	±25V	-	1.4W (Ta)	7mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	-	-	-
DMT6013LFDF-13	Diodes Incorporated	MOSFET N-CH 60V 10A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	10A (Ta)	4.5V, 10V	2.3V @ 250µA	15 nC @ 10 V	1081 pF @ 30 V	±20V	-	900mW (Ta)	15mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
GSFU90R340	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 12.00A, 90 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2786 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tj) Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock750	MOSFET (Metal Oxide)	900 V	12A (Tj)	10V	3.9V @ 250µA	53.8 nC @ 10 V	2786 pF @ 50 V	±30V	-	34W (Tj)	340mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FLD470	Sanken Electric USA Inc.	MOSFET 40V/70A/0.005 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	70A (Ta)	10V	4V @ 1mA	-	5100 pF @ 10 V	±20V	-	35W (Tc)	10.5mOhm @ 10A, 10V	150°C	Through Hole	TO-220	TO-220-3 Full Pack
FCH190N65F-F155	onsemi	MOSFET N-CH 650V 20.6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,245	MOSFET (Metal Oxide)	650 V	20.6A (Tc)	10V	5V @ 2mA	78 nC @ 10 V	3225 pF @ 100 V	±20V	-	208W (Tc)	190mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPD90P04P4L04ATMA2	Infineon Technologies	MOSFET P-CH 40V 90A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock37,539	MOSFET (Metal Oxide)	40 V	90A (Tc)	4.5V, 10V	2.2V @ 250µA	176 nC @ 10 V	11570 pF @ 25 V	+5V, -16V	-	125W (Tc)	4.3mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK155E65Z-S1X	Toshiba Semiconductor and Storage	650V DTMOS VI TO-220 155MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock132	MOSFET (Metal Oxide)	650 V	18A (Ta)	10V	4V @ 730µA	29 nC @ 10 V	1635 pF @ 300 V	±30V	-	150W (Tc)	155mOhm @ 9A, 10V	150°C	Through Hole	TO-220	TO-220-3
SSM6K516NU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 6A 6UDFNB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Vgs (Max): +20V, -12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	Package: -	Stock17,535	MOSFET (Metal Oxide)	30 V	6A (Ta)	4.5V, 10V	2.5V @ 100µA	2.5 nC @ 4.5 V	280 pF @ 15 V	+20V, -12V	-	1.25W (Ta)	46mOhm @ 4A, 10V	150°C	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SQ4410EY-T1_BE3	Vishay Siliconix	MOSFET N-CH 30V 15A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock14,304	MOSFET (Metal Oxide)	30 V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	53 nC @ 10 V	2385 pF @ 25 V	±20V	-	5W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STD110N02RT4G	onsemi	MOSFET N-CH 24V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	24 V	32A (Ta)	4.5V, 10V	2V @ 250µA	28 nC @ 4.5 V	3440 pF @ 20 V	±20V	-	1.5W (Ta), 110W (Tc)	4.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R115CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,970	MOSFET (Metal Oxide)	650 V	21A (Tc)	10V	4.5V @ 490µA	41 nC @ 10 V	1950 pF @ 400 V	±20V	-	114W (Tc)	115mOhm @ 9.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQ2310CES-T1_GE3	Vishay Siliconix	MOSFET N-CH 20V 6A TO236 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6A (Tc)	1.8V, 4.5V	1V @ 250µA	8.5 nC @ 4.5 V	590 pF @ 10 V	±8V	-	2W (Tc)	30mOhm @ 5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3