Page 1064 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS126L6906HTSA1
Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,264
IXFD15N100-8X
IXYS

MOSFET N-CH

Package: -

Stock4,912
2SK3816-DL-1EX
ON Semiconductor

MOSFET N-CH

Package: -

Stock7,472
AO7413_030
Alpha & Omega Semiconductor Inc.

MOSFET P-CH SC70-3

Package: SC-70, SOT-323

Stock4,272
AON1610
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 4A 6DFN

Package: 6-PowerUFDFN

Stock2,688
NTHD2110TT1G
ON Semiconductor

MOSFET P-CH 12V 4.5A CHIPFET

Package: 8-SMD, Flat Lead

Stock4,896
IXTP55N075T
IXYS

MOSFET N-CH 75V 55A TO-220

Package: TO-220-3

Stock7,792
IRFI740BTU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 10A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,928
FDM606P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.8A MICROFET

Package: 8-SMD, Flat Lead Exposed Pad

Stock5,328
IRFP450
IXYS

MOSFET N-CH 500V 14A TO-247AD

Package: TO-3P-3 Full Pack

Stock14,988
STD70N02L
STMicroelectronics

MOSFET N-CH 25V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock866,820
IRFR220NTRRPBF
Infineon Technologies

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,560
MMIX1T550N055T2
IXYS

MOSFET N-CH 55V 550A SMPD

Package: 24-PowerSMD, 21 Leads

Stock6,640
NVMFS6B03NLT1G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

Package: 8-PowerTDFN

Stock4,880
IXTQ42N25P
IXYS

MOSFET N-CH 250V 42A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,312
STD100N3LF3
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock692,268
FDN371N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 2.5A SSOT-3

Package: TO-236-3, SC-59, SOT-23-3

Stock37,500
APT5010JLLU3
Microsemi Corporation

MOSFET N-CH 500V 41A SOT227

Package: SOT-227-4, miniBLOC

Stock6,096
IRF6668TRPBF
Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET

Package: DirectFET? Isometric MZ

Stock375,864
DMN2027UPS-13
Diodes Incorporated

MOSFET N-CH 20V 10A POWERDI5060

Package: 8-PowerTDFN

Stock5,504

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS126L6906HTSA1	Infineon Technologies	MOSFET N-CH 600V 0.021A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,264	MOSFET (Metal Oxide)	600V	21mA (Ta)	0V, 10V	1.6V @ 8µA	2.1nC @ 5V	28pF @ 25V	±20V	Depletion Mode	500mW (Ta)	500 Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IXFD15N100-8X	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,912	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3816-DL-1EX	ON Semiconductor	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,472	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
AO7413_030	Alpha & Omega Semiconductor Inc.	MOSFET P-CH SC70-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 113 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock4,272	MOSFET (Metal Oxide)	20V	1.4A (Ta)	2.5V, 10V	1.2V @ 250µA	4.5nC @ 4.5V	400pF @ 10V	±12V	-	350mW (Ta)	113 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
AON1610	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 4A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock2,688	MOSFET (Metal Oxide)	20V	4A (Ta)	1.5V, 4.5V	1.1V @ 250µA	14nC @ 4.5V	748pF @ 10V	±8V	-	1.8W (Ta)	29 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (1.6x1.6)	6-PowerUFDFN
NTHD2110TT1G	ON Semiconductor	MOSFET P-CH 12V 4.5A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,896	MOSFET (Metal Oxide)	12V	4.5A (Ta)	1.8V, 4.5V	850mV @ 250µA	14nC @ 4.5V	1072pF @ 6V	±8V	-	1.1W (Ta)	40 mOhm @ 6.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
IXTP55N075T	IXYS	MOSFET N-CH 75V 55A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,792	MOSFET (Metal Oxide)	75V	55A (Tc)	10V	4V @ 25µA	33nC @ 10V	1400pF @ 25V	±20V	-	130W (Tc)	19.5 mOhm @ 27.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFI740BTU	Fairchild/ON Semiconductor	MOSFET N-CH 400V 10A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,928	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	53nC @ 10V	1800pF @ 25V	±30V	-	3.13W (Ta), 134W (Tc)	540 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FDM606P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6.8A MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.92W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP, MicroFET (3x2) Package / Case: 8-SMD, Flat Lead Exposed Pad	Package: 8-SMD, Flat Lead Exposed Pad	Stock5,328	MOSFET (Metal Oxide)	20V	6.8A (Tc)	1.8V, 4.5V	1.5V @ 250µA	30nC @ 4.5V	2200pF @ 10V	±8V	-	1.92W (Ta)	30 mOhm @ 6.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP, MicroFET (3x2)	8-SMD, Flat Lead Exposed Pad
IRFP450	IXYS	MOSFET N-CH 500V 14A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock14,988	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	150nC @ 10V	2800pF @ 25V	±20V	-	190W (Tc)	400 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-3P-3 Full Pack
STD70N02L	STMicroelectronics	MOSFET N-CH 25V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock866,820	MOSFET (Metal Oxide)	25V	60A (Tc)	5V, 10V	1.8V @ 250µA	32nC @ 10V	1400pF @ 16V	±20V	-	60W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR220NTRRPBF	Infineon Technologies	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,560	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	4V @ 250µA	23nC @ 10V	300pF @ 25V	±20V	-	43W (Tc)	600 mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MMIX1T550N055T2	IXYS	MOSFET N-CH 55V 550A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock6,640	MOSFET (Metal Oxide)	55V	550A (Tc)	10V	3.8V @ 250µA	595nC @ 10V	40000pF @ 25V	±20V	-	830W (Tc)	1.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
NVMFS6B03NLT1G	ON Semiconductor	MOSFET N-CH 100V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,880	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	9.4nC @ 10V	5320pF @ 25V	±16V	-	3.9W (Ta), 198W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IXTQ42N25P	IXYS	MOSFET N-CH 250V 42A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 84 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,312	MOSFET (Metal Oxide)	250V	42A (Tc)	10V	5.5V @ 250µA	70nC @ 10V	2300pF @ 25V	±20V	-	300W (Tc)	84 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
STD100N3LF3	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock692,268	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	2.5V @ 250µA	27nC @ 5V	2060pF @ 25V	±20V	-	110W (Tc)	5.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDN371N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 2.5A SSOT-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock37,500	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10.7nC @ 4.5V	815pF @ 10V	±12V	-	500mW (Ta)	50 mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
APT5010JLLU3	Microsemi Corporation	MOSFET N-CH 500V 41A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 378W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,096	MOSFET (Metal Oxide)	500V	41A	10V	5V @ 2.5mA	96nC @ 10V	4360pF @ 25V	±30V	-	378W (Tc)	100 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IRF6668TRPBF	Infineon Technologies	MOSFET N-CH 80V 55A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock375,864	MOSFET (Metal Oxide)	80V	55A (Tc)	10V	4.9V @ 100µA	31nC @ 10V	1320pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	15 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
DMN2027UPS-13	Diodes Incorporated	MOSFET N-CH 20V 10A POWERDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,504	MOSFET (Metal Oxide)	20V	10A (Ta), 36A (Tc)	2.5V, 4.5V	1.3V @ 250µA	11.6nC @ 4.5V	1091pF @ 10V	±12V	-	1.1W (Ta)	12.5 mOhm @ 9.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
ZVP1320FTA	Diodes Incorporated	MOSFET P-CH 200V 0.035A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 35mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock318,132	MOSFET (Metal Oxide)	200V	35mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	350mW (Ta)	80 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NVBG060N090SC1	onsemi	MOSFET N-CH 900V 5.8/44A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V Vgs (Max): +19V, -10V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,380	MOSFET (Metal Oxide)	900 V	5.8A (Ta), 44A (Tc)	15V	4.3V @ 5mA	88 nC @ 15 V	1800 pF @ 450 V	+19V, -10V	-	3.6W (Ta), 211W (Tc)	84mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DMT8008LSS-13	Diodes Incorporated	MOSFET BVDSS: 61V-100V SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	13A (Ta), 32A (Tc)	4.5V, 10V	2.8V @ 250µA	47 nC @ 10 V	2840 pF @ 40 V	±20V	-	1.3W (Ta)	8mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	-	-	-
MSC180SMA120B	Microchip Technology	MOSFET 1200V 25A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock3	MOSFET (Metal Oxide)	1200 V	21A (Tc)	5V, 20V	4.5V @ 500µA	36 nC @ 20 V	530 pF @ 1000 V	+23V, -10V	-	147W (Tc)	225mOhm @ 8A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMN29M9UFDF-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	11A (Ta)	1.8V, 4.5V	1.2V @ 250µA	14.6 nC @ 10 V	655 pF @ 8 V	±12V	-	1.2W (Ta)	13.5mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
DMTH8008LFG-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	17A (Ta), 70A (Tc)	4.5V, 10V	2.5V @ 1mA	37.7 nC @ 10 V	2254 pF @ 40 V	±20V	-	1.2W (Ta), 50W (Tc)	6.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
NVMFS5C406NLT1G	onsemi	MOSFET N-CH 40V 53A/362A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	53A (Ta), 362A (Tc)	4.5V, 10V	2V @ 280µA	149 nC @ 10 V	9400 pF @ 20 V	±20V	-	3.9W (Ta), 179W (Tc)	0.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SPP04N60S5	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.5A (Tc)	10V	5.5V @ 200µA	22.9 nC @ 10 V	580 pF @ 25 V	±20V	-	50W (Tc)	950mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3