Page 1065 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR3706TRR
Infineon Technologies

MOSFET N-CH 20V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,904
SI7860DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock340,728
SUD50P04-13L-GE3
Vishay Siliconix

MOSFET P-CH 40V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock510,012
IXCY01N90E
IXYS

MOSFET N-CH 900V 0.25A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,224
NTD20P06L-001
ON Semiconductor

MOSFET P-CH 60V 15.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,120
AUIRFR8405TRL
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,536
IXTK75N30
IXYS

MOSFET N-CH 300V 75A TO-264

Package: TO-264-3, TO-264AA

Stock7,600
DMG8N65SCT
Diodes Incorporated

MOSFET BVDSS: 501V 650V TO220-3

Package: TO-220-3

Stock5,840
SIA438EDJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 6A PPAK SC70-6L

Package: PowerPAK? SC-70-6

Stock3,008
RW1C020UNT2R
Rohm Semiconductor

MOSFET N-CH 20V 2A WEMT6

Package: SOT-563, SOT-666

Stock36,000
TSM038N03PQ33 RGG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: 8-PowerWDFN

Stock2,064
NVTFS5116PLTAG
ON Semiconductor

MOSFET P-CH 60V 14A 8WDFN

Package: 8-PowerWDFN

Stock7,360
IRL3803STRLPBF
Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,516
FQA65N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 65A TO-3P

Package: TO-3P-3, SC-65-3

Stock9,648
RQ1C065UNTR
Rohm Semiconductor

MOSFET N-CH 20V 6.5A TSMT8

Package: 8-SMD, Flat Lead

Stock7,360
RQ5E070BNTCL
Rohm Semiconductor

NCH 30V 7A MIDDLE POWER MOSFET

Package: SC-96

Stock22,746
STP21N90K5
STMicroelectronics

MOSFET N-CH 900V 18.5A TO-220

Package: TO-220-3

Stock15,780
CPC5602CTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V 5MA SOT-223

Package: TO-261-4, TO-261AA

Stock506,640
SI2301CDS-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,250,268
IXFX220N15P
IXYS

MOSFET N-CH 220A PLUS247-3

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3706TRR	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,904	MOSFET (Metal Oxide)	20V	75A (Tc)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2410pF @ 10V	±12V	-	88W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7860DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock340,728	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SUD50P04-13L-GE3	Vishay Siliconix	MOSFET P-CH 40V 60A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 93.7W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,012	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	3V @ 250µA	95nC @ 10V	3120pF @ 25V	±20V	-	3W (Ta), 93.7W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXCY01N90E	IXYS	MOSFET N-CH 900V 0.25A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 133pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,224	MOSFET (Metal Oxide)	900V	250mA (Tc)	10V	5V @ 25µA	7.5nC @ 10V	133pF @ 25V	±20V	-	40W (Tc)	80 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20P06L-001	ON Semiconductor	MOSFET P-CH 60V 15.5A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,120	MOSFET (Metal Oxide)	60V	15.5A (Ta)	5V	2V @ 250µA	26nC @ 5V	1190pF @ 25V	±20V	-	65W (Tc)	150 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
AUIRFR8405TRL	Infineon Technologies	MOSFET N-CH 40V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5171pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 1.98 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,536	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	3.9V @ 100µA	155nC @ 10V	5171pF @ 25V	±20V	-	163W (Tc)	1.98 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTK75N30	IXYS	MOSFET N-CH 300V 75A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,600	MOSFET (Metal Oxide)	300V	75A (Tc)	10V	4V @ 250µA	240nC @ 10V	6000pF @ 25V	±20V	-	540W (Tc)	42 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
DMG8N65SCT	Diodes Incorporated	MOSFET BVDSS: 501V 650V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	4V @ 250µA	30nC @ 10V	1217pF @ 25V	±30V	-	125W (Tc)	1.3 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIA438EDJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 6A PPAK SC70-6L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 11.4W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock3,008	MOSFET (Metal Oxide)	20V	6A (Tc)	2.5V, 4.5V	1.4V @ 250µA	12nC @ 10V	350pF @ 10V	±12V	-	2.4W (Ta), 11.4W (Tc)	46 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
RW1C020UNT2R	Rohm Semiconductor	MOSFET N-CH 20V 2A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock36,000	MOSFET (Metal Oxide)	20V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	2nC @ 4.5V	180pF @ 10V	±10V	-	400mW (Ta)	105 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
TSM038N03PQ33 RGG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2557pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,064	MOSFET (Metal Oxide)	30V	78A (Tc)	4.5V, 10V	2.5V @ 250µA	25nC @ 4.5V	2557pF @ 15V	±20V	-	39W (Tc)	3.8 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3x3)	8-PowerWDFN
NVTFS5116PLTAG	ON Semiconductor	MOSFET P-CH 60V 14A 8WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,360	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 25V	±20V	-	3.2W (Ta), 21W (Tc)	52 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRL3803STRLPBF	Infineon Technologies	MOSFET N-CH 30V 140A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,516	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	5000pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQA65N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 65A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock9,648	MOSFET (Metal Oxide)	200V	65A (Tc)	10V	5V @ 250µA	200nC @ 10V	7900pF @ 25V	±30V	-	310W (Tc)	32 mOhm @ 32.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
RQ1C065UNTR	Rohm Semiconductor	MOSFET N-CH 20V 6.5A TSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock7,360	MOSFET (Metal Oxide)	20V	6.5A (Ta)	1.5V, 4.5V	1V @ 1mA	11nC @ 4.5V	870pF @ 10V	±10V	-	700mW (Ta)	22 mOhm @ 6.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RQ5E070BNTCL	Rohm Semiconductor	NCH 30V 7A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 16.1 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock22,746	MOSFET (Metal Oxide)	30V	7A (Tc)	10V	2.5V @ 1mA	23nC @ 10V	950pF @ 15V	±20V	-	1W (Tc)	16.1 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT3	SC-96
STP21N90K5	STMicroelectronics	MOSFET N-CH 900V 18.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock15,780	MOSFET (Metal Oxide)	900V	18.5A (Tc)	10V	5V @ 100µA	43nC @ 10V	1645pF @ 100V	±30V	Current Sensing	250W (Tc)	299 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
CPC5602CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V 5MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock506,640	MOSFET (Metal Oxide)	350V	5mA (Ta)	-0.35V	-	-	300pF @ 0V	±20V	Depletion Mode	2.5W (Ta)	14 Ohm @ 50mA, 350mV	-40°C ~ 85°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SI2301CDS-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,250,268	MOSFET (Metal Oxide)	20V	3.1A (Tc)	2.5V, 4.5V	1V @ 250µA	10nC @ 4.5V	405pF @ 10V	±8V	-	860mW (Ta), 1.6W (Tc)	112 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFX220N15P	IXYS	MOSFET N-CH 220A PLUS247-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA1N200P3HV-TRL	IXYS	MOSFET N-CH 2000V 1A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	2000 V	1A (Tc)	10V	4V @ 250µA	23.5 nC @ 10 V	646 pF @ 25 V	±20V	-	125W (Tc)	40Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FCPF250N65S3R0L-F154	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Stock2,595	MOSFET (Metal Oxide)	650 V	12A (Tj)	10V	4.5V @ 290µA	24 nC @ 10 V	1010 pF @ 400 V	±30V	-	31W (Tc)	250mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
NX3008NBKVL	Nexperia USA Inc.	MOSFET N-CH 30V 400MA TO236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock21,009	MOSFET (Metal Oxide)	30 V	400mA (Ta)	1.8V, 4.5V	1.1V @ 250µA	0.68 nC @ 4.5 V	50 pF @ 15 V	±8V	-	350mW (Ta), 1.14W (Tc)	1.4Ohm @ 350mA, 4.5V	150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
MCU20N15A-TP	Micro Commercial Co	MOSFET N-CH DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1158 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	20A	6V, 10V	4V @ 250µA	20.9 nC @ 10 V	1158 pF @ 75 V	±20V	-	50W	59mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R110CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 31.2A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,940	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	4.5V @ 1.3mA	118 nC @ 10 V	3240 pF @ 100 V	±20V	-	277.8W (Tc)	110mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SSM3J378R-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET PCH -20V -6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock66,507	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	840 pF @ 10 V	+6V, -8V	-	1W (Ta)	29.8mOhm @ 3A, 4.5V	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IPD031N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock212,697	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	2.2V @ 93µA	79 nC @ 4.5 V	13000 pF @ 30 V	±20V	-	167W (Tc)	3.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
G2R1000MT17J	GeneSiC Semiconductor	SIC MOSFET N-CH 3A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock39,993	SiCFET (Silicon Carbide)	1700 V	3A (Tc)	20V	4V @ 2mA	-	139 pF @ 1000 V	+20V, -10V	-	54W (Tc)	1.2Ohm @ 2A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA