Page 1092 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPB80N03S2L-03
Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock72,204
IRFR2307Z
Infineon Technologies

MOSFET N-CH 75V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock475,452
AON4605_002
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V DFN

Package: -

Stock7,424
JANTXV2N6800
Microsemi Corporation

MOSFET N-CH

Package: TO-205AF Metal Can

Stock4,752
NDS8410A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock486,948
DMP3100L-7
Diodes Incorporated

MOSFET P-CH 30V 2.7A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock36,000
FQB24N08TM
Fairchild/ON Semiconductor

MOSFET N-CH 80V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,800
FQPF19N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 13.6A TO-220F

Package: TO-220-3 Full Pack

Stock18,600
FDB0690N1507L
Fairchild/ON Semiconductor

150V TO263 7L JEDEC GREEN EMC

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,928
IXTP08N120P
IXYS

MOSFET N-CH 1200V 800MA TO-220

Package: TO-220-3

Stock4,704
LND150N3-G-P013
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,448
TSM5NC50CF C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3 Full Pack

Stock2,240
APT34F60B
Microsemi Corporation

MOSFET N-CH 600V 34A TO-247

Package: TO-247-3

Stock3,552
FDMC86570LET60
Fairchild/ON Semiconductor

MOSFET N-CH 60V 56A POWER33

Package: 8-PowerWDFN

Stock4,464
FDT459N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A SOT-223

Package: TO-261-4, TO-261AA

Stock177,132
2SK327700L
Panasonic Electronic Components

MOSFET N-CH 200V 2.5A UG-1

Package: U-G1

Stock24,192
FDC638P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.5A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,475,196
FDS9431A
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock258,360
DMN601LT-7
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 3K

Package: -

Request a Quote
IPDD60R170CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 19A HDSOP-10

Package: -

Stock141

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPB80N03S2L-03	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock72,204	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 250µA	220nC @ 10V	8180pF @ 25V	±20V	-	300W (Tc)	2.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR2307Z	Infineon Technologies	MOSFET N-CH 75V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock475,452	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 100µA	75nC @ 10V	2190pF @ 25V	±20V	-	110W (Tc)	16 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AON4605_002	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,424	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV2N6800	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock4,752	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4V @ 250µA	34.75nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	1.1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
NDS8410A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock486,948	MOSFET (Metal Oxide)	30V	10.8A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 5V	1620pF @ 15V	±20V	-	2.5W (Ta)	12 mOhm @ 10.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMP3100L-7	Diodes Incorporated	MOSFET P-CH 30V 2.7A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 227pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.08W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock36,000	MOSFET (Metal Oxide)	30V	2.7A (Ta)	4.5V, 10V	2.1V @ 250µA	-	227pF @ 10V	±20V	-	1.08W (Ta)	100 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FQB24N08TM	Fairchild/ON Semiconductor	MOSFET N-CH 80V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,800	MOSFET (Metal Oxide)	80V	24A (Tc)	10V	4V @ 250µA	25nC @ 10V	750pF @ 25V	±25V	-	3.75W (Ta), 75W (Tc)	60 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF19N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 13.6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,600	MOSFET (Metal Oxide)	100V	13.6A (Tc)	5V, 10V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±20V	-	38W (Tc)	100 mOhm @ 6.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDB0690N1507L	Fairchild/ON Semiconductor	150V TO263 7L JEDEC GREEN EMC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,928	MOSFET (Metal Oxide)	150V	3.8A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	250W (Tc)	-	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTP08N120P	IXYS	MOSFET N-CH 1200V 800MA TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,704	MOSFET (Metal Oxide)	1200V	800mA (Tc)	10V	4.5V @ 50µA	14nC @ 10V	333pF @ 25V	±20V	-	50W (Tc)	25 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
LND150N3-G-P013	Microchip Technology	MOSFET N-CH 500V 30MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,448	MOSFET (Metal Oxide)	500V	30mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	740mW (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TSM5NC50CF C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 586pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,240	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	15nC @ 10V	586pF @ 50V	±30V	-	40W (Tc)	1.38 Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
APT34F60B	Microsemi Corporation	MOSFET N-CH 600V 34A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 624W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock3,552	MOSFET (Metal Oxide)	600V	36A (Tc)	10V	5V @ 1mA	165nC @ 10V	6640pF @ 25V	±30V	-	624W (Tc)	210 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
FDMC86570LET60	Fairchild/ON Semiconductor	MOSFET N-CH 60V 56A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4790pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,464	MOSFET (Metal Oxide)	60V	18A (Ta), 87A (Tc)	4.5V, 10V	3V @ 250µA	88nC @ 10V	4790pF @ 30V	±20V	-	2.8W (Ta), 65W (Tc)	4.3 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power33	8-PowerWDFN
FDT459N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock177,132	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	2V @ 250µA	17nC @ 10V	365pF @ 15V	±20V	-	3W (Ta)	35 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
2SK327700L	Panasonic Electronic Components	MOSFET N-CH 200V 2.5A UG-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 10W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-G1 Package / Case: U-G1	Package: U-G1	Stock24,192	MOSFET (Metal Oxide)	200V	2.5A (Tc)	10V	4V @ 1mA	-	170pF @ 20V	±20V	-	1W (Ta), 10W (Tc)	1.7 Ohm @ 1.25A, 10V	150°C (TJ)	Surface Mount	U-G1	U-G1
FDC638P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.5A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,475,196	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	14nC @ 4.5V	1160pF @ 10V	±8V	-	1.6W (Ta)	48 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDS9431A	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock258,360	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.5V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	405pF @ 10V	±8V	-	2.5W (Ta)	130 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN601LT-7	Diodes Incorporated	2N7002 FAMILY SOT523 T&R 3K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 356mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	356mA (Ta)	5V, 10V	2.5V @ 250µA	1.3 nC @ 10 V	47 pF @ 30 V	±20V	-	400mW (Ta)	2Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
IPDD60R170CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 19A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	Package: -	Stock141	MOSFET (Metal Oxide)	600 V	19A (Tc)	-	4.5V @ 240µA	23 nC @ 10 V	1016 pF @ 400 V	±20V	-	137W (Tc)	170mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
NTND1K5N021ZTAG	onsemi	2MDUCHANNEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO3420-ML	MOSLEADER	N 20V 6A SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3234-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIA112LDJ-T1-GE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock17,994	MOSFET (Metal Oxide)	100 V	3.5A (Ta), 8.8A (Tc)	4.5V, 10V	2.5V @ 250µA	11.8 nC @ 10 V	355 pF @ 50 V	±25V	-	2.9W (Ta), 15.6W (Tc)	14mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
AO3451-ML	MOSLEADER	P -30V -4A SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA50R280E6	Infineon Technologies	IPA50R280 - 500V, CoolMOS N-Chan FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD029N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 53µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,997	MOSFET (Metal Oxide)	40 V	24A (Ta), 131A (Tc)	6V, 10V	3.4V @ 53µA	68 nC @ 10 V	3200 pF @ 20 V	±20V	-	3W (Ta), 107W (Tc)	2.9mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCT06P03-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6A	4.5V, 10V	2.5V @ 250µA	13.7 nC @ 10 V	502 pF @ 20 V	±20V	-	2.1W	55mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA