Page 1091 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP07N60C3HKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220AB

Package: TO-220-3

Stock6,864
PMV16UN,215
NXP

MOSFET N-CH 20V 5.8A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock148,080
SI7886ADP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8

Package: PowerPAK? SO-8

Stock301,284
APTM120SK15G
Microsemi Corporation

MOSFET N-CH 1200V 60A SP6

Package: SP6

Stock5,504
IXTP70N085T
IXYS

MOSFET N-CH 85V 70A TO-220

Package: TO-220-3

Stock3,728
ZVN2110GTC
Diodes Incorporated

MOSFET N-CH 100V 500MA SOT223

Package: TO-261-4, TO-261AA

Stock121,056
IPL65R195C7AUMA1
Infineon Technologies

MOSFET N-CH 4VSON

Package: 4-PowerTSFN

Stock6,240
IPI80P03P4L04AKSA1
Infineon Technologies

MOSFET P-CH 30V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,032
NVMFS5C612NLT1G
ON Semiconductor

MOSFET N-CH 60V 36A SO8FL

Package: 8-PowerTDFN

Stock6,880
NDPL100N10BG
ON Semiconductor

MOSFET N-CH 100V 100A TO220

Package: TO-220-3

Stock2,192
TSM60NB190CM2 RNG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,672
SI2321-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-23 PACKAGE

Package: TO-236-3, SC-59, SOT-23-3

Stock3,168
IRFBC30ASPBF
Vishay Siliconix

MOSFET N-CH 600V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,608
DMP4047SK3-13
Diodes Incorporated

MOSFET P-CH 40V 20A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,432
3LP01SS-TL-E
ON Semiconductor

MOSFET P-CH 30V 0.1A SMCP

Package: SC-81

Stock1,849,620
2N7002 TR
Central Semiconductor Corp

MOSFET N-CH 60V 0.115A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock29,400
NDT452AP
Fairchild/ON Semiconductor

MOSFET P-CH 30V 5A SOT-223-4

Package: TO-261-4, TO-261AA

Stock1,386,900
SIHP690N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 6.4A TO220AB

Package: -

Stock3,075
AONR66406
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 22A/30A 8DFN

Package: -

Request a Quote
FDMS0348
Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP07N60C3HKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,864	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
PMV16UN,215	NXP	MOSFET N-CH 20V 5.8A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 510mW (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock148,080	MOSFET (Metal Oxide)	20V	5.8A (Ta)	1.8V, 4.5V	1V @ 250µA	11nC @ 4.5V	670pF @ 10V	±8V	-	510mW (Ta)	18 mOhm @ 5.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
SI7886ADP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock301,284	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	1.5V @ 250µA	60nC @ 4.5V	6450pF @ 15V	±12V	-	1.9W (Ta)	4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
APTM120SK15G	Microsemi Corporation	MOSFET N-CH 1200V 60A SP6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	Package: SP6	Stock5,504	MOSFET (Metal Oxide)	1200V	60A	10V	5V @ 10mA	748nC @ 10V	20600pF @ 25V	±30V	-	1250W (Tc)	175 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
IXTP70N085T	IXYS	MOSFET N-CH 85V 70A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,728	MOSFET (Metal Oxide)	85V	70A (Tc)	10V	4V @ 50µA	59nC @ 10V	2570pF @ 25V	±20V	-	176W (Tc)	13.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVN2110GTC	Diodes Incorporated	MOSFET N-CH 100V 500MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock121,056	MOSFET (Metal Oxide)	100V	500mA (Ta)	10V	2.4V @ 1mA	-	75pF @ 25V	±20V	-	2W (Ta)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPL65R195C7AUMA1	Infineon Technologies	MOSFET N-CH 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock6,240	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 290µA	23nC @ 10V	1150pF @ 400V	±20V	-	75W (Tc)	195 mOhm @ 2.9A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IPI80P03P4L04AKSA1	Infineon Technologies	MOSFET P-CH 30V 80A TO262-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,032	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 253µA	160nC @ 10V	11300pF @ 25V	+5V, -16V	-	137W (Tc)	4.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
NVMFS5C612NLT1G	ON Semiconductor	MOSFET N-CH 60V 36A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,880	MOSFET (Metal Oxide)	60V	36A (Ta), 235A (Tc)	4.5V, 10V	2V @ 250µA	91nC @ 10V	6660pF @ 25V	±20V	-	3.8W (Ta), 167W (Tc)	1.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NDPL100N10BG	ON Semiconductor	MOSFET N-CH 100V 100A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 15V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,192	MOSFET (Metal Oxide)	100V	100A (Ta)	10V, 15V	4V @ 1mA	35nC @ 10V	2950pF @ 50V	±20V	-	2.1W (Ta), 110W (Tc)	7.2 mOhm @ 50A, 15V	175°C (TJ)	Through Hole	TO-220-3	TO-220-3
TSM60NB190CM2 RNG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1273pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150.6W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,672	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	31nC @ 10V	1273pF @ 100V	±30V	-	150.6W (Tc)	190 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI2321-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-23 PACKAGE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,168	MOSFET (Metal Oxide)	20V	2.9A	4.5V	900mV @ 250µA	13nC @ 4.5V	715pF @ 6V	±12V	-	350mW	110 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRFBC30ASPBF	Vishay Siliconix	MOSFET N-CH 600V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,608	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	±30V	-	74W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMP4047SK3-13	Diodes Incorporated	MOSFET P-CH 40V 20A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1328pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,432	MOSFET (Metal Oxide)	40V	20A (Tc)	4.5V, 10V	3V @ 250µA	23.2nC @ 10V	1328pF @ 20V	±20V	-	1.6W (Ta)	45 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
3LP01SS-TL-E	ON Semiconductor	MOSFET P-CH 30V 0.1A SMCP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Package / Case: SC-81	Package: SC-81	Stock1,849,620	MOSFET (Metal Oxide)	30V	100mA (Ta)	1.5V, 4V	-	1.43nC @ 10V	7.5pF @ 10V	±10V	-	150mW (Ta)	10.4 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-SSFP	SC-81
2N7002 TR	Central Semiconductor Corp	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): 40V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock29,400	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	40V	-	350mW (Ta)	7.5 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NDT452AP	Fairchild/ON Semiconductor	MOSFET P-CH 30V 5A SOT-223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,386,900	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	2.8V @ 250µA	30nC @ 10V	690pF @ 15V	±20V	-	3W (Ta)	65 mOhm @ 5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SIHP690N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 6.4A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,075	MOSFET (Metal Oxide)	600 V	6.4A (Tc)	10V	5V @ 250µA	12 nC @ 10 V	347 pF @ 100 V	±30V	-	62.5W (Tc)	700mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AONR66406	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 22A/30A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	22A (Ta), 30A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1480 pF @ 20 V	±20V	-	5W (Ta), 27W (Tc)	6.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN
FDMS0348	Fairchild Semiconductor	POWER FIELD-EFFECT TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (5x6) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A (Ta), 35A (Tc)	4.5V, 10V	3V @ 250µA	26 nC @ 10 V	1590 pF @ 15 V	±20V	-	2.5W (Ta), 50W (Tc)	7mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (5x6)	8-PowerWDFN
IPDQ65R099CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 480µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 186W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Stock1,470	MOSFET (Metal Oxide)	650 V	29A (Tc)	10V	4.5V @ 480µA	39 nC @ 10 V	1942 pF @ 400 V	±20V	-	186W (Tc)	99mOhm @ 9.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
SFR9120TF	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	4.9A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	550 pF @ 25 V	±30V	-	2.5W (Ta), 32W (Tc)	600mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
RS1E350GNTB	Rohm Semiconductor	MOSFET N-CH 30V 35A/80A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock7,500	MOSFET (Metal Oxide)	30 V	35A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 1mA	68 nC @ 10 V	4060 pF @ 15 V	±20V	-	3W (Ta)	1.7mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
CMS25N03V8A-HF	Comchip Technology	MOSFET N-CH 30V 25A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Stock8,970	MOSFET (Metal Oxide)	30 V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	8 nC @ 4.5 V	500 pF @ 25 V	±20V	-	21W (Tc)	18mOhm @ 12A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3x3)	8-PowerVDFN
IPI80N07S405AKSA1	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	80A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
NVLJWS013N03CLTAG	onsemi	T6 30V LL 2X2 WDFNW6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 6-WDFNW (2.05x2.05) Package / Case: 6-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta), 35A (Tc)	4.5V, 10V	2V @ 250µA	10 nC @ 10 V	600 pF @ 15 V	±20V	-	2.4W (Ta), 27W (Tc)	13mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	6-WDFNW (2.05x2.05)	6-PowerWDFN
RJK03M6DPA-WS-J5A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT12H090LFDF4-13	Diodes Incorporated	MOSFET N-CH 115V 3.4A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 115 V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN2020-6 Package / Case: 6-PowerXDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	115 V	3.4A (Ta)	3V, 10V	2.2V @ 250µA	6 nC @ 10 V	251 pF @ 50 V	±12V	-	900mW (Ta)	90mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN2020-6	6-PowerXDFN