Page 1089 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFZ44ESTRL
Infineon Technologies

MOSFET N-CH 60V 48A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,384
AOK10N90
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 900V 10A TO247

Package: TO-247-3

Stock3,040
IRFR1N60ATRRPBF
Vishay Siliconix

MOSFET N-CH 600V 1.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,872
SSM3K303T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.9A TSM

Package: TO-236-3, SC-59, SOT-23-3

Stock5,088
ZVP2120ASTZ
Diodes Incorporated

MOSFET P-CH 200V 0.12A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock144,000
HRF3205
Fairchild/ON Semiconductor

MOSFET N-CH 55V 100A TO-220AB

Package: TO-220-3

Stock24,288
IRL520S
Vishay Siliconix

MOSFET N-CH 100V 9.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock84,012
NVMFS5C673NLWFAFT1G
ON Semiconductor

TRENCH 6 60V FET

Package: -

Stock6,624
DMP6050SFG-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI333

Package: 8-PowerWDFN

Stock6,880
TSM2N60SCW RPG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-261-4, TO-261AA

Stock7,024
FQA9N90C_F109
Fairchild/ON Semiconductor

MOSFET N-CH 900V 9A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,704
TPS1100D
Texas Instruments

MOSFET P-CH 15V 1.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,864
IRF7421D1TRPBF
Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock450,324
BSZ086P03NS3E G
Infineon Technologies

MOSFET P-CH 30V 40A TSDSON-8

Package: 8-PowerTDFN

Stock52,266
CSD25481F4T
Texas Instruments

MOSFET P-CH 20V 2.5A 3PICOSTAR

Package: 3-XFDFN

Stock60,510
NTBG020N120SC1
onsemi

SICFET N-CH 1200V 8.6A/98A D2PAK

Package: -

Stock2,238
VS-FC420SA15
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 400A SOT227

Package: -

Request a Quote
STP60N043DM9
STMicroelectronics

N-CHANNEL 600 V, 38 MOHM TYP., 5

Package: -

Request a Quote
94-3660PBF
Infineon Technologies

MOSFET N-CH 100V 4.5A 8SO

Package: -

Request a Quote
DMN22M5UFG-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFZ44ESTRL	Infineon Technologies	MOSFET N-CH 60V 48A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,384	MOSFET (Metal Oxide)	60V	48A (Tc)	10V	4V @ 250µA	60nC @ 10V	1360pF @ 25V	±20V	-	110W (Tc)	23 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOK10N90	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 900V 10A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,040	MOSFET (Metal Oxide)	900V	10A (Tc)	10V	4.5V @ 250µA	75nC @ 10V	3160pF @ 25V	±30V	-	403W (Tc)	980 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFR1N60ATRRPBF	Vishay Siliconix	MOSFET N-CH 600V 1.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,872	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	229pF @ 25V	±30V	-	36W (Tc)	7 Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3K303T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 2.9A TSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,088	MOSFET (Metal Oxide)	30V	2.9A (Ta)	4V, 10V	2.6V @ 1mA	3.3nC @ 4V	180pF @ 10V	±20V	-	700mW (Ta)	83 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSM	TO-236-3, SC-59, SOT-23-3
ZVP2120ASTZ	Diodes Incorporated	MOSFET P-CH 200V 0.12A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock144,000	MOSFET (Metal Oxide)	200V	120mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	25 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
HRF3205	Fairchild/ON Semiconductor	MOSFET N-CH 55V 100A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock24,288	MOSFET (Metal Oxide)	55V	100A (Tc)	10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	±20V	-	175W (Tc)	8 mOhm @ 59A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL520S	Vishay Siliconix	MOSFET N-CH 100V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock84,012	MOSFET (Metal Oxide)	100V	9.2A (Tc)	4V, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	±10V	-	3.7W (Ta), 60W (Tc)	270 mOhm @ 5.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C673NLWFAFT1G	ON Semiconductor	TRENCH 6 60V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,624	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP6050SFG-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,880	MOSFET (Metal Oxide)	60V	4.8A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	1293pF @ 30V	±20V	-	1.1W (Ta)	50 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
TSM2N60SCW RPG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,024	MOSFET (Metal Oxide)	600V	600mA (Tc)	10V	4V @ 250µA	13nC @ 10V	435pF @ 25V	±30V	-	2.5W (Tc)	5 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
FQA9N90C_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 9A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,704	MOSFET (Metal Oxide)	900V	9A (Tc)	10V	5V @ 250µA	58nC @ 10V	2730pF @ 25V	±30V	-	280W (Tc)	1.4 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
TPS1100D	Texas Instruments	MOSFET P-CH 15V 1.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 791mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,864	MOSFET (Metal Oxide)	15V	1.6A (Ta)	2.7V, 10V	1.5V @ 250µA	5.45nC @ 10V	-	+2V, -15V	-	791mW (Ta)	180 mOhm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRF7421D1TRPBF	Infineon Technologies	MOSFET N-CH 30V 5.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock450,324	MOSFET (Metal Oxide)	30V	5.8A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	510pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	35 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSZ086P03NS3E G	Infineon Technologies	MOSFET P-CH 30V 40A TSDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 105µA Gate Charge (Qg) (Max) @ Vgs: 57.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock52,266	MOSFET (Metal Oxide)	30V	13.5A (Ta), 40A (Tc)	6V, 10V	3.1V @ 105µA	57.5nC @ 10V	4785pF @ 15V	±25V	-	2.1W (Ta), 69W (Tc)	8.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
CSD25481F4T	Texas Instruments	MOSFET P-CH 20V 2.5A 3PICOSTAR FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 189pF @ 10V Vgs (Max): -12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 88 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock60,510	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 4.5V	1.2V @ 250µA	0.91nC @ 4.5V	189pF @ 10V	-12V	-	500mW (Ta)	88 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
NTBG020N120SC1	onsemi	SICFET N-CH 1200V 8.6A/98A D2PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,238	SiCFET (Silicon Carbide)	1200 V	8.6A (Ta), 98A (Tc)	20V	4.3V @ 20mA	220 nC @ 20 V	2943 pF @ 800 V	+25V, -15V	-	3.7W (Ta), 468W (Tc)	28mOhm @ 60A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
VS-FC420SA15	Vishay General Semiconductor - Diodes Division	MOSFET N-CH 150V 400A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 909W (Tc) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	5.4V @ 1mA	250 nC @ 10 V	13700 pF @ 25 V	±20V	-	909W (Tc)	2.75mOhm @ 200A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
STP60N043DM9	STMicroelectronics	N-CHANNEL 600 V, 38 MOHM TYP., 5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	56A (Tc)	10V	4.5V @ 250µA	78.6 nC @ 10 V	4675 pF @ 400 V	±30V	-	245W (Tc)	43mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
94-3660PBF	Infineon Technologies	MOSFET N-CH 100V 4.5A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	4.5A (Ta)	-	5.5V @ 250µA	50 nC @ 10 V	930 pF @ 25 V	-	-	-	60mOhm @ 2.7A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN22M5UFG-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	24A (Ta), 27A (Tc)	2.5V, 4.5V	1.3V @ 250µA	99 nC @ 10 V	3926 pF @ 10 V	±12V	-	600mW (Ta)	2mOhm @ 13.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
FDD8896-F085	Fairchild Semiconductor	MOSFET N-CH 30V 17A/94A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17A (Ta), 94A (Tc)	4.5V, 10V	2.5V @ 250µA	60 nC @ 10 V	2525 pF @ 15 V	±20V	-	80W (Tc)	5.7mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IGT40R070D1ATMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	400 V	31A (Tc)	-	1.6V @ 2.6mA	-	382 pF @ 320 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
2SJ598-ZK-E1-AZ	Renesas Electronics Corporation	MP-3ZK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 6A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock23,982	MOSFET (Metal Oxide)	60 V	12A (Tc)	4V, 10V	2.5V @ 1mA	15 nC @ 10 V	720 pF @ 10 V	±20V	-	1W (Ta), 23W (Tc)	130mOhm @ 6A, 10V	150°C	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUCN04S7L019ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	-	10V	-	40 nC @ 10 V	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
IPN70R1K2P7SATMA1	Infineon Technologies	MOSFET N-CH 700V 4.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 6.3W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock2,433	MOSFET (Metal Oxide)	700 V	4.5A (Tc)	10V	3.5V @ 40µA	4.8 nC @ 10 V	174 pF @ 400 V	±16V	-	6.3W (Tc)	1.2Ohm @ 900mA, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
2SK1591-0-T1B-A	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CMS16P06H8-HF	Comchip Technology	MOSFET P-CH 60V 5A/16A DFN5X6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5x6 (PR-PAK) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	5A (Ta), 16A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1256 pF @ 30 V	±20V	-	2W (Ta), 25W (Tc)	48mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5x6 (PR-PAK)	8-PowerTDFN
FS30KMJ-3-B00	Renesas Electronics Corporation	N-CHANNEL , 150V, 30A FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-