Page 1099 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3102SPBF
Infineon Technologies

MOSFET N-CH 20V 61A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock68,400
2SK0615
Panasonic Electronic Components

MOSFET N-CH 80V 500MA 3-SIP

Package: 3-SIP

Stock7,408
NTMFS4C020NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,240
ZXMP10A17GQTC
Diodes Incorporated

MOSFET PCH 100V 1.7A SOT223

Package: TO-261-4, TO-261AA

Stock3,264
AOTF4185
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 34A TO220FL

Package: TO-220-3 Full Pack

Stock7,184
MVGSF1N03LT1G
ON Semiconductor

MOSFET N-CH 30V 1.6A SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,480
SSM3K15CT(TPL3)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A CST3

Package: SC-101, SOT-883

Stock960,000
TSM850N06CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-236-3, SC-59, SOT-23-3

Stock7,488
SI7478DP-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 15A PPAK SO-8

Package: PowerPAK? SO-8

Stock127,788
IPD50N03S4L06ATMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,792
TK9P65W,RQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 9.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,596
SI3139KE-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-523 PACKAG

Package: SOT-523

Stock27,894
STP27N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 20A TO-220

Package: TO-220-3

Stock21,516
IXFX90N30
IXYS

MOSFET N-CH 300V 90A PLUS247

Package: TO-247-3

Stock6,992
IPW60R070C6
Infineon Technologies

MOSFET N-CH 600V 53A TO247

Package: TO-247-3

Stock217,308
IXTA06N120P
IXYS

MOSFET N-CH 1200V 0.6A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,664
ZVN4306A
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock42,000
SIS407DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 25A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock77,352
SSF3611E
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -12A, -30V

Package: -

Stock24,000
UJ3C120070K4S
Qorvo

1200V/70MOHM, N-OFF SIC CASCODE,

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3102SPBF	Infineon Technologies	MOSFET N-CH 20V 61A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock68,400	MOSFET (Metal Oxide)	20V	61A (Tc)	4.5V, 7V	700mV @ 250µA	58nC @ 4.5V	2500pF @ 15V	±10V	-	89W (Tc)	13 mOhm @ 37A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK0615	Panasonic Electronic Components	MOSFET N-CH 80V 500MA 3-SIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: M-A1 Package / Case: 3-SIP	Package: 3-SIP	Stock7,408	MOSFET (Metal Oxide)	80V	500mA (Ta)	10V	3.5V @ 1mA	-	45pF @ 10V	20V	-	1W (Ta)	4 Ohm @ 500mA, 10V	150°C (TJ)	Through Hole	M-A1	3-SIP
NTMFS4C020NT1G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,240	MOSFET (Metal Oxide)	30V	47A (Ta), 303A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.2W (Ta), 134W (Tc)	0.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
ZXMP10A17GQTC	Diodes Incorporated	MOSFET PCH 100V 1.7A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 1.2A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,264	MOSFET (Metal Oxide)	100V	1.7A (Ta)	6V, 10V	4V @ 250µA	10.7nC @ 10V	424pF @ 50V	±20V	-	2W (Ta)	450 mOhm @ 1.2A, 6V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
AOTF4185	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V 34A TO220FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,184	MOSFET (Metal Oxide)	40V	34A (Tc)	4.5V, 10V	2.5V @ 250µA	55nC @ 10V	2550pF @ 20V	±20V	-	33W (Tc)	16 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FL	TO-220-3 Full Pack
MVGSF1N03LT1G	ON Semiconductor	MOSFET N-CH 30V 1.6A SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,480	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4.5V, 10V	2.4V @ 250µA	-	140pF @ 5V	±20V	-	420mW (Ta)	100 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SSM3K15CT(TPL3)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A CST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock960,000	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	7.8pF @ 3V	±20V	-	100mW (Ta)	4 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	CST3	SC-101, SOT-883
TSM850N06CX RFG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,488	MOSFET (Metal Oxide)	60V	3A (Tc)	4.5V, 10V	2.5V @ 250µA	9.5nC @ 10V	529pF @ 30V	±20V	-	1.7W (Tc)	85 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SI7478DP-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock127,788	MOSFET (Metal Oxide)	60V	15A (Ta)	4.5V, 10V	3V @ 250µA	160nC @ 10V	-	±20V	-	1.9W (Ta)	7.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IPD50N03S4L06ATMA1	Infineon Technologies	MOSFET N-CH 30V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,792	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 20µA	31nC @ 10V	2330pF @ 25V	±16V	-	56W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
TK9P65W,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 9.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,596	MOSFET (Metal Oxide)	650V	9.3A (Ta)	10V	3.5V @ 350µA	20nC @ 10V	700pF @ 300V	±30V	-	80W (Tc)	560 mOhm @ 4.6A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SI3139KE-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-523 PACKAG FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 150mW Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: SOT-523	Stock27,894	MOSFET (Metal Oxide)	20V	660mA	4.5V	1.1V @ 250µA	-	170 pF @ 6V	±12V	-	150mW	700 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
STP27N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock21,516	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	33nC @ 10V	1320pF @ 100V	±25V	-	170W (Tc)	163 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFX90N30	IXYS	MOSFET N-CH 300V 90A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,992	MOSFET (Metal Oxide)	300V	90A (Tc)	10V	4V @ 8mA	360nC @ 10V	10000pF @ 25V	±20V	-	560W (Tc)	33 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IPW60R070C6	Infineon Technologies	MOSFET N-CH 600V 53A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock217,308	MOSFET (Metal Oxide)	600V	53A (Tc)	10V	3.5V @ 1.72mA	170nC @ 10V	3800pF @ 100V	±20V	-	391W (Tc)	70 mOhm @ 25.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IXTA06N120P	IXYS	MOSFET N-CH 1200V 0.6A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 32 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,664	MOSFET (Metal Oxide)	1200V	600mA (Tc)	10V	4.5V @ 50µA	13.3nC @ 10V	270pF @ 25V	±20V	-	42W (Tc)	32 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVN4306A	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock42,000	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SIS407DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 25A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93.8nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock77,352	MOSFET (Metal Oxide)	20V	25A (Tc)	1.8V, 4.5V	1V @ 250µA	93.8nC @ 8V	2760pF @ 10V	±8V	-	3.6W (Ta), 33W (Tc)	9.5 mOhm @ 15.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SSF3611E	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -12A, -30V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock24,000	MOSFET (Metal Oxide)	30 V	12A (Tc)	4.5V, 10V	2V @ 250µA	55 nC @ 10 V	3224 pF @ 15 V	±20V	-	2W (Tc)	13mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
UJ3C120070K4S	Qorvo	1200V/70MOHM, N-OFF SIC CASCODE, FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	34.5A (Tc)	12V	6V @ 10mA	46 nC @ 15 V	1500 pF @ 100 V	±25V	-	254.2W (Tc)	90mOhm @ 20A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
RJK0368DPA-00-J0	Renesas Electronics Corporation	MOSFET N-CH 30V 20A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta)	-	2.5V @ 1mA	6.2 nC @ 4.5 V	730 pF @ 10 V	-	-	25W (Tc)	14.3mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN
SIS110DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 5.2A/14.2A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock66,669	MOSFET (Metal Oxide)	100 V	5.2A (Ta), 14.2A (Tc)	7.5V, 10V	4V @ 250µA	13 nC @ 10 V	550 pF @ 50 V	±20V	-	3.2W (Ta), 24W (Tc)	54mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
BS170-D75Z	onsemi	MOSFET N-CH 60V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Package: -	Stock24,828	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	3V @ 1mA	-	40 pF @ 10 V	±20V	-	830mW (Ta)	5Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSD214SNL6327	Infineon Technologies	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT363-6-6 Package / Case: 6-VSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.5A (Ta)	2.5V, 4.5V	1.2V @ 3.7µA	0.8 nC @ 5 V	143 pF @ 10 V	±12V	-	500mW (Ta)	140mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT363-6-6	6-VSSOP, SC-88, SOT-363
TJ30S06M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 30A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock11,886	MOSFET (Metal Oxide)	60 V	30A (Ta)	6V, 10V	3V @ 1mA	80 nC @ 10 V	3950 pF @ 10 V	+10V, -20V	-	68W (Tc)	21.8mOhm @ 15A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP65R145CFD7AAKSA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 420µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17A (Tc)	10V	4.5V @ 420µA	36 nC @ 10 V	1694 pF @ 400 V	±20V	-	98W (Tc)	145mOhm @ 8.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
MMSF10N03ZR2	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RSS060P05TB1	Rohm Semiconductor	MOSFET P-CH 50V 6A 8SOP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-