Page 1102 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR7833CPBF
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,744
IRF7468TR
Infineon Technologies

MOSFET N-CH 40V 9.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,056,672
AO4435_102
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 10.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,120
SI1058X-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V SC89

Package: SOT-563, SOT-666

Stock60,756
PSMN050-80PS,127
NXP

MOSFET N-CH 80V 22A TO220AB

Package: TO-220-3

Stock4,864
AUIRFU540Z
Infineon Technologies

MOSFET N CH 100V 35A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,072
IXFR38N80Q2
IXYS

MOSFET N-CH 800V 28A ISOPLUS247

Package: ISOPLUS247?

Stock5,792
IPD80R3K3P7ATMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,744
DMP4013LFGQ-7
Diodes Incorporated

MOSFET PCH 40V 10.3A POWERDI

Package: 8-PowerVDFN

Stock6,544
IXFK160N30T
IXYS

MOSFET N-CH 300V 160A TO-264

Package: TO-264-3, TO-264AA

Stock78,000
STFW3N150
STMicroelectronics

MOSFET N-CH 1500V 2.5A TO3PF

Package: TO-3P-3 Full Pack

Stock32,892
PMCM4401VPEZ
Nexperia USA Inc.

MOSFET P-CH 12V WLCSP

Package: 4-XFBGA, WLCSP

Stock4,960
EPC2016C
EPC

TRANS GAN 100V 18A BUMPED DIE

Package: Die

Stock6,704
FDMC86260ET150
Fairchild/ON Semiconductor

MOSFET N-CH 150V 5.4A POWER33

Package: 8-PowerWDFN

Stock7,408
FDZ371PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.7A WLCSP

Package: 4-XFBGA, WLCSP

Stock6,256
FQD5N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock240,744
PSMN013-80YS,115
Nexperia USA Inc.

MOSFET N-CH 80V 60A LFPAK

Package: SC-100, SOT-669

Stock31,980
SI3460DV-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 5.1A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,440,344
RJK2017DPE-WS-J3
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IXTX3N250L
IXYS

MOSFET N-CH 2500V 3A PLUS247-3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR7833CPBF	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,744	MOSFET (Metal Oxide)	30V	140A (Ta)	4.5V, 10V	-	-	-	±20V	-	140W (Tc)	-	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7468TR	Infineon Technologies	MOSFET N-CH 40V 9.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,056,672	MOSFET (Metal Oxide)	40V	9.4A (Ta)	4.5V, 10V	2V @ 250µA	34nC @ 4.5V	2460pF @ 20V	±12V	-	2.5W (Ta)	15.5 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AO4435_102	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 10.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,120	MOSFET (Metal Oxide)	30V	10.5A (Ta)	5V, 20V	3V @ 250µA	24nC @ 10V	1400pF @ 15V	±25V	-	3.1W (Ta)	14 mOhm @ 11A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI1058X-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V SC89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock60,756	MOSFET (Metal Oxide)	20V	-	2.5V, 4.5V	1.55V @ 250µA	5.9nC @ 5V	380pF @ 10V	±12V	-	236mW (Ta)	91 mOhm @ 1.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
PSMN050-80PS,127	NXP	MOSFET N-CH 80V 22A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,864	MOSFET (Metal Oxide)	80V	22A (Tc)	10V	4V @ 1mA	11nC @ 10V	633pF @ 12V	±20V	-	56W (Tc)	51 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRFU540Z	Infineon Technologies	MOSFET N CH 100V 35A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,072	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 50µA	59nC @ 10V	1690pF @ 25V	±20V	-	91W (Tc)	28.5 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IXFR38N80Q2	IXYS	MOSFET N-CH 800V 28A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock5,792	MOSFET (Metal Oxide)	800V	28A (Tc)	10V	4.5V @ 8mA	190nC @ 10V	8340pF @ 25V	±30V	-	416W (Tc)	240 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IPD80R3K3P7ATMA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,744	MOSFET (Metal Oxide)	800V	1.9A (Tc)	10V	3.5V @ 30µA	5.8nC @ 10V	120pF @ 500V	±20V	-	18W (Tc)	3.3 Ohm @ 590mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP4013LFGQ-7	Diodes Incorporated	MOSFET PCH 40V 10.3A POWERDI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,544	MOSFET (Metal Oxide)	40V	10.3A (Ta)	4.5V, 10V	3V @ 250µA	68.6nC @ 10V	3426pF @ 20V	±20V	-	1W (Ta)	13 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
IXFK160N30T	IXYS	MOSFET N-CH 300V 160A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1390W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock78,000	MOSFET (Metal Oxide)	300V	160A (Tc)	10V	5V @ 8mA	335nC @ 10V	28000pF @ 25V	±20V	-	1390W (Tc)	19 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
STFW3N150	STMicroelectronics	MOSFET N-CH 1500V 2.5A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock32,892	MOSFET (Metal Oxide)	1500V	2.5A (Tc)	10V	5V @ 250µA	29.3nC @ 10V	939pF @ 25V	±30V	-	63W (Tc)	9 Ohm @ 1.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
PMCM4401VPEZ	Nexperia USA Inc.	MOSFET P-CH 12V WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (2x2) Package / Case: 4-XFBGA, WLCSP	Package: 4-XFBGA, WLCSP	Stock4,960	MOSFET (Metal Oxide)	12V	3.9A (Ta)	1.8V, 4.5V	900mV @ 250µA	10nC @ 4.5V	415pF @ 6V	±8V	-	400mW (Ta), 12.5W (Tc)	65 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-WLCSP (2x2)	4-XFBGA, WLCSP
EPC2016C	EPC	TRANS GAN 100V 18A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock6,704	GaNFET (Gallium Nitride)	100V	18A (Ta)	5V	2.5V @ 3mA	4.5nC @ 5V	420pF @ 50V	+6V, -4V	-	-	16 mOhm @ 11A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
FDMC86260ET150	Fairchild/ON Semiconductor	MOSFET N-CH 150V 5.4A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,408	MOSFET (Metal Oxide)	150V	5.4A (Ta), 25A (Tc)	6V, 10V	4V @ 250µA	21nC @ 10V	1330pF @ 75V	±20V	-	2.8W (Ta), 65W (Tc)	34 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power33	8-PowerWDFN
FDZ371PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3.7A WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (1x1) Package / Case: 4-XFBGA, WLCSP	Package: 4-XFBGA, WLCSP	Stock6,256	MOSFET (Metal Oxide)	20V	3.7A (Ta)	1.5V, 4.5V	1V @ 250µA	17nC @ 4.5V	1000pF @ 10V	±8V	-	1.7W (Ta)	75 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-WLCSP (1x1)	4-XFBGA, WLCSP
FQD5N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock240,744	MOSFET (Metal Oxide)	150V	4.3A (Tc)	10V	4V @ 250µA	7nC @ 10V	230pF @ 25V	±25V	-	2.5W (Ta), 30W (Tc)	800 mOhm @ 2.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN013-80YS,115	Nexperia USA Inc.	MOSFET N-CH 80V 60A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock31,980	MOSFET (Metal Oxide)	80V	60A (Tc)	10V	4V @ 1mA	37nC @ 10V	2420pF @ 40V	±20V	-	106W (Tc)	12.9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SI3460DV-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 5.1A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,440,344	MOSFET (Metal Oxide)	20V	5.1A (Ta)	1.8V, 4.5V	450mV @ 1mA (Min)	20nC @ 4.5V	-	±8V	-	1.1W (Ta)	27 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
RJK2017DPE-WS-J3	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTX3N250L	IXYS	MOSFET N-CH 2500V 3A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	2500 V	3A (Tc)	10V	5V @ 1mA	230 nC @ 10 V	5400 pF @ 25 V	±20V	-	417W (Tc)	10Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
MCQ02P15-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tj) Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2A (Ta)	10V	3.5V @ 250µA	19 nC @ 10 V	926 pF @ 100 V	±20V	-	2.5W (Tj)	310mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
AON6570	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 5X6 DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFI614BTUFP001	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	2.8A (Tc)	10V	4V @ 250µA	10.5 nC @ 10 V	275 pF @ 25 V	±30V	-	3.13W (Ta), 40W (Tc)	2Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
FDMS3D5N08LC	onsemi	MOSFET N-CH 80V 19A/136A 8PQFN FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	-	-	19A (Ta), 136A (Tc)	-	2.5V @ 250µA	-	-	-	-	-	3.5mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
DMN53D0LTQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	350mA (Ta)	2.5V, 10V	1.5V @ 250µA	1.4 nC @ 10 V	46 pF @ 25 V	±20V	-	300mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
TK110E10PL-S1X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock813	MOSFET (Metal Oxide)	100 V	42A (Tc)	4.5V, 10V	2.5V @ 300µA	33 nC @ 10 V	2040 pF @ 50 V	±20V	-	87W (Tc)	10.7mOhm @ 21A, 10V	175°C	Through Hole	TO-220	TO-220-3
C3M0015065K	Wolfspeed, Inc.	SICFET N-CH 650V 120A TO247-4L FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock2,838	SiCFET (Silicon Carbide)	650 V	120A (Tc)	15V	3.6V @ 15.5mA	188 nC @ 15 V	5011 pF @ 400 V	+15V, -4V	-	416W (Tc)	21mOhm @ 55.8A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
SQW33N65EF-GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3972 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: -	Stock1,557	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	4V @ 250µA	173 nC @ 10 V	3972 pF @ 100 V	±30V	-	375W (Tc)	109mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD	TO-247-3